1
Trench Gate Design
Dual IGBTMOD™
100 Amperes/600 Volts
CM100DUS-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Q (2 PLACES)
CM
A
B
S
T T
U U
W
V
D
R
K K
C2E1 E2 C1
#110 TAB x H THICK
(4 PLACES)
X
Y
M
N
E
F
G
F
J
E2G2G1E1
P - NUTS x Z DEEP (3 PLACES)
TC MEASURED
POINT
CL
C2E1
RTC
RTC
E2
E1
G1
C1
E2
G2
1
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5
J 0.53 13.5
K 0.91 23.0
L 0.83 21.2
M 0.67 17.0
Dimensions Inches Millimeters
N 0.28 7.0
P M5 M5
Q 0.26 Dia. 6.5 Dia.
R 0.02 4.0
S 0.30 7.5
T 0.63 16.0
U 0.10 2.5
V 1.0 25.0
W 0.94 24.0
X 0.51 13.0
Y 0.47 12.0
Z 0.47 12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
£ Low VCE(sat)
£ Low ESW(off)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DUS-12F is
a 600V (VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 100 12
2
CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
2
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM100DUS-12F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 100 Amperes
Peak Collector Current ICM 200* Amperes
Emitter Current** (Tc = 25°C) IE 100 Amperes
Peak Emitter Current** IEM 200* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 350 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 μA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C 1.7 2.0 2.7 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 1.95 – Volts
Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V – 620 – nC
Emitter-Collector Voltage** VEC IE = 100A, VGE = 0V – – 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 27 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 1.8 nf
Reverse Transfer Capacitance Cres – – 1 nf
Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 100A, – – 100 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 80 ns
Switch Turn-off Delay Time td(off) RG = 6.3Ω, Inductive – – 300 ns
Times Fall Time tf Load Switching Operation – – 150 ns
Diode Reverse Recovery Time** trr IE = 100A – – 150 ns
Diode Reverse Recovery Charge** Qrr – 1.9 – µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – 0.35 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – 0.70 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c')Q Per IGBT 1/2 Module, – 0.23** – °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.07 – °C/W
** If you use this value, Rth(f-a) should be measured just under the chips.
COLLECTOR-CURRENT, IC, (AMPERES)
SWITCHING LOSS, ESW, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
100101102
100
10-1
101
ESW(on)
ESW(off)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1 2 3 4
120
40
0
VGE = 20V
13
8
8.5
7.5
7
80
160
200
9
15
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0 40 80 120 160
2.5
2.0
1.5
1.0
0.5
0200
VGE = 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10-1 102
102
101
10-1
100
VGE = 0V
f = 1MHz
Coes
Cres
Cies
100101
0.5 1.0 1.5 2.0 2.5 3.0
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
6 8 10 1412 1816 20
4
3
2
1
0
Tj = 25°C
IC = 40A
IC = 200A
IC = 100A
VCC = 300V
VGE = 15V
RG = 6.3 Ω
Tj = 125C
HALF-BRIDGE
SWITCHING
Tj = 25°C 9.5
10
11
4
CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25C
Per Unit Base = Rth(j-c) = 0.35°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25C
Per Unit Base = Rth(j-c) = 0.7°C/W
Zth = Rth • (NORMALIZED VALUE)
10-1
10-2
10-3
trr
Irr
COLLECTOR CURRENT, IC, (AMPERES)
103
100101
102
101
100
td(off)
td(on)
tr
VCC = 300V
VGE = 15V
RG = 6.3 Ω
Tj = 125°C
VCC = 300V
VGE = 15V
RG = 6.3 Ω
Tj = 125°C
tf
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
102
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
100101102
101
100
102
101
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 100 900500 600 700 800
16
12
8
4
0200 400300
VCC = 300V
VCC = 200V
IC = 100A
trr
Irr
GATE RESISTANCE, RG, ()
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
100101
100
10-1
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
101102
100
10-1
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
VCC = 300V
VGE = 15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
VCC = 300V
VGE = 15V
RG = 6.2 Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
