=0)\ 2o/MOS FET | iRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.18 9 Preliminary This series of N-Channel Enhancement-mode Power N-CHANNEL MOSFETs utilizes GEs advanced Power DMOS technology = b to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance ; in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-205AF (TO-39) Also, the extended safe operating area with good linear aso oara transfer characteristics makes it well suited for many linear (8.8809 386) otso.es applications such as audio amplifiers and servo motors. 78007-85097 0.019-0.033 Features aoa Ones o8e) ING e Polysilicon _ ili iabili LANE olysilicon gate Improved stability and reliability wooo Us Uy et oman e No secondary breakdown Excellent ruggedness ym eT eounce : 300 BUTE OOTS e Ultra-fast switching Independent of temperature i270 waeoay (4826-5.334) @ Voitage controiled High transconductance aN : . . : tits Low input capacitance Reduced drive requirement onan . t aI . 0.028-0.034 Nowe, Excellent thermal stability Ease of paralleling "0.711-0.864)_ Ze a aR, (tee | termi | terw.2 | Teams | {_to-2osar | source | GATE | DAAIN | maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF130 IRFF131 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Rag = 1M VpGrR 100 60 Volts Continuous Drain Current @ To = 25C Ip 8 8 A Pulsed Drain Current IDM 32 32 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 25 25 Watts Derate Above 25C 0.2 0.2 w/c Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -65 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rasc 5.0 5.0 C/W Thermal Resistance, Junction to Ambient Rasa 175 175 C/W Maximum Lead Temperature for Soldering Purposes: 1/16" from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 265electrical characteristics (To = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT off characteristics Drain-Source Breakdown Voltage IRFF130 BVpss 100 _ _ Volts (Veg = OV, Ip = 250 uA) IRFF131 60 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, V@s = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, x 0.8, Vgg = OV, Tc = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, |p = 250 uA) On-State Drain Current | 8.0 _ _ A (Vag = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 4.0A) Rps(on) _ 0.18 Ohms Forward Transconductance (Vpg = 10V, Ip = 4.0A) Sts 2.4 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ _ 800 pF Output Capacitance Vps = 25V Coss _ _ 500 pF Reverse Transfer Capacitance f= 1MHz Crss _ _ 150 pF switching characteristics* Turn-on Delay Time Vos = 30V ta(on) _ 30 _ ns Rise Time Ip = 4.0A, Veg = 15V tr _ 80 _ ns Turn-off Delay Time RGEN = 50, Reg = 12.50 ta(off) ~_ 50 ns Fall Time (Ras (equiv.) = 100) ts _ 80 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 8 A Pulsed Source Current Ismu _ 32 A Diode Forward Voltage _ _ (To = 25C, Vas = OV, Ig = 8A) VsD 2.5 Volts Reverse Recovery Time ter _ 300 - ns (Ig = 8A, dig/dt = 100A/usec, To = 125C) Qrr _ 1.5 _ uC *Pulse Test: Pulse width < 300 ws, duty cycle <= 2% 100 80 60 40 Ip, DRAIN CURRENT (AMPERES) iy a 06 Te = 26C Ty = 180C MAX. 04 Rthuc = 5.0 KW SINGLE PULSE oc 02 TION IN THIS AREA IS LIMITED BY Rpsion) 1.0 2 4 IRFF130 (RFF131 6 8 10 20 40 60 80100 200 Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 266 CONDITIONS: REpg(ON) CONDITIONS: Ip = 4.0 A, Vag = 10V V@g(TH) CONDITIONS: Ip = 2504A, Vog = Vag VesitH) Rosion) AND Vaggriay NORMALIZED a o a o nN 40 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rysion) AND Vasiru) VS. TEMP. 120 160