FEATURES
*
*
*
*
Power dissipation
PCM 0.3 W(Tamb=25OC)
Collector current
ICM 0.3 A
Collector-base voltage
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBTA13
Dimensions in inches and (millimeters)
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
Notes:
CHARACTERISTICS SYMBOL UNITS
417
oC/WThermal Resistance Junction to Ambient
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
R qJA
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
mW300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Complant", "100% Sn plating (Pb-free)".
150
-55 to +150
oC
oC
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.047(1.20)
0.055(1.40)
0.004(0.10)
0.000(0.00)
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(1)
SMALL-SIGNAL CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 100uAdc, VBE= 0)
Collector Cutoff Current (VCB= 30Vdc, IE= 0)
Emitter Cutoff Current (VEB= 10Vdc, IC= 0)
DC Current Gain (IC= 10mAdc, VCE= 5.0Vdc)
Collector-Emitter Saturation Voltage (IC= 100mAdc, IB= 0.1mAdc)
(IC= 100mAdc, VCE= 5.0Vdc)
V(BR)CES 30 - Vdc
ICBO - 100 nVdc
IEBO - 100 nVdc
Vdc
fT125 - MHz
hFE
-
1.5
-
10,000
-
5000
2.0
-
-
VCE(sat)
Symbol Min Max Unit
Base-Emitter On Voltage (IC= 100mAdc, VCE= 5.0Vdc)
Current-Gain-Bandwidth Product (2) (IC= 10mAdc, VCE= 5.0Vdc, f= 100MHz)
Vdc
VBE
Notes : 1. Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%
2. fT = |hfe|.ftest
- -
RS, SOURCE RESISTANCE (KW)
NF, NOISE FIGURE (dB)
Figure 2 Noise Current
Figure 4 Wideband Noise FigureFigure 3. Total Wideband Noise Voltage
BANDWIDTH = 10 Hz TO 15.7 kHz
50
100
200
500
20
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0 BANDWIDTH = 1.0 Hz
IC= 1.0 mA
IC= 1.0 mA
IC= 1.0 mA
100uA
100uA
10uA
10uA
2.0 5.0 10 20 50 100 200 500 100
BANDWIDTH = 10 Hz TO 15.7 kHz
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 100
2.0
1.0 mA
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
VCE=5.0V
f=100MHz
TJ=25
O
C
Figure 5 Capacitance
VR, REVERSE VOLTAGE (V)
5.0
7.0
10
20
3.0
Figure 6 High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
2.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ=25
O
C
C, CAPACITANCE (PF)
|hfe|, SMALL-SIGNALCURRENT GAIN
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
Figure 1 Noise Voltage
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
RS, SOURCE RESISTANCE (KW)
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (PA)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
RATING AND CHARACTERISTICS CURVES ( MMBTA13 )
VCE=5.0V
f=100MHz
TJ=25
O
C
Cobo
IC=10uA
IC=1.0mA
100 uA
100 uA
10 uA
~
~
RS, SOURCE RESISTANCE (KW)
NF, NOISE FIGURE (dB)
Figure 2 Noise Current
Figure 4 Wideband Noise FigureFigure 3. Total Wideband Noise Voltage
BANDWIDTH = 10 Hz TO 15.7 kHz
50
100
200
500
20
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0 BANDWIDTH = 1.0 Hz
IC= 1.0 mA
IC= 1.0 mA
IC= 1.0 mA
100uA
100uA
10uA
10uA
2.0 5.0 10 20 50 100 200 500 100
BANDWIDTH = 10 Hz TO 15.7 kHz
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 100
2.0
1.0 mA
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
VCE=5.0V
f=100MHz
TJ=25
O
C
Figure 5 Capacitance
VR, REVERSE VOLTAGE (V)
5.0
7.0
10
20
3.0
Figure 6 High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
2.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ=25
O
C
C, CAPACITANCE (PF)
|hfe|, SMALL-SIGNALCURRENT GAIN
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
Figure 1 Noise Voltage
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
RS, SOURCE RESISTANCE (KW)
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (PA)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
RATING AND CHARACTERISTICS CURVES ( MMBTA13 )
VCE=5.0V
f=100MHz
TJ=25
O
C
Cobo
IC=10uA
IC=1.0mA
100 uA
100 uA
10 uA
~
~
RATING AND CHARACTERISTICS CURVES ( MMBTA13 )
Figure 12 Active Region Safe Operating Area
VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT(mA)
TA=25
O
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
100us
1.0 s
TC=25
O
C
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