1$2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator Features * Low capacitance. (C=3.0pF max) * Short reverse recovery time. (trr=8.0ns max) * High reliability with glass seal. Ordering Information Type No. Cathode band Package Code 1S2076 Light Blue DO-35 Outline Sse SS {}--__ _} 1 2 \ Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vem 35 Vv Reverse voltage Vr 30 V Peak forward current lem 450 mA Non-Repetitive peak forward surge current lesm* 1 A Average forward current _ lo 150 mA Power dissipation Py 250 mw Junction temperature Tj 175 C Storage temperature Tstq -65 to +175 C * Within 1s forward surge current. Electrical Characteristics (Ta = 25C) Item Symboi Min Typ Max Unit Test Condition Forward voltage Ve 0.64 _ 0.80 V Ip = 10 mA Reverse current Ip _ _ pA Va = 30V Capacitance Cc _ _ pF VR =1V, f= 1 MHz * Reverse recovery time tr, _ _ ns Ip=Ip=tOmA, lp=1mMA * Reverse recovery time test circuit Ro =502 | Pulse Generator 3kQ Rin 50 Trigger182076 Forward current | (A) Capacitance C (pF) 1.0 02 #04 06 O8 1.0 Forward voltage Ve (V) Fig.1 Forward current Vs. Forward voltage f=1MHz 10 Reverse voltage Va (V) Fig.3 Capacitance Vs. Reverse voltage 1.2 10 Reverse current Ip (A) Ta=125C Ta=25C 10 20 30 40 50 Reverse voitage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 90