B772B B772B Silicon PNP Epitaxial Transistor Description :The B772B is designed for use in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. Features: Excellent hFE Linearity Complementary to D882B Chip Appearance Chip Size 1100umx1100um Chip Thickness 21020um Bonding Pad Size Base 240umx240um Emitter 330umx260um Front Metal Al Backside Metal Au/TiNiAg Scribe line width 60um Wafer Size 6 inch Electrical Characteristics( Ta=25) Characteristic Symbol Test Condition Min Max Unit Collector Cutoff Current ICBO VCB=-35V, IE=0 -0.1 uA Emitter Cutoff Current IEBO VEB=-5V, IC=0 -0.1 uA Collector-Base Breakdown Voltage BVCBO IC=-0.1mA -40 V Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -30 V Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA -5.0 V VCE=-2V, IC=-1A 100 DC Current Gain Collector Saturation Voltage May.2004 hFE VCE(sat) IC=-2A, IB=-200mA Version :0.0 400 -0.5 Page 1 of 1 V