May.2004 Version :0.0 Page 1 of 1
B772B Silicon PNP Epitaxial Transistor
Description :The B772B is designed for use in output stage of 1w audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Features: ●Excellent hFE Linearity
●Complementary to D882B
Chip Appearance
Chip Size 1100um×1100um
Chip Thickness 210±20um
Base 240um×240um
Bonding Pad Size
Emitter 330um×260um
Front Metal Al
Backside Metal Au/TiNiAg
Scribe line width 60um
Wafer Size 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic Symbol Test Condition Min Max Unit
Collector Cutoff Current ICBO V
CB=-35V, IE=0 -0.1 uA
Emitter Cutoff Current IEBO V
EB=-5V, IC=0 -0.1 uA
Collector-Base Breakdown Voltage BVCBO I
C=-0.1mA -40 V
Collector-Emitter Breakdown Voltage BVCEO I
C=-1mA -30 V
Emitter-Base Breakdown Voltage BVEBO I
E=-0.1mA -5.0 V
DC Current Gain hFE V
CE=-2V, IC=-1A 100 400
Collector Saturation Voltage VCE(sat) IC=-2A, IB=-200mA -0.5 V
B772B
