2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) max ID max TA = +25C Low On-Resistance Low Gate Threshold Voltage 60V 3 @ VGS = 10V 300mA Low Input Capacitance Fast Switching Speed Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Motor Control Power Management Functions Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Pin Out Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number 2N7002E-7-F 2N7002E-13-F Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Date Code Key Year 2003 Code P Month Code Jan 1 K7B Chengdu A/T Site Shanghai A/T Site 2004 R 2007 U 2005 S Feb 2 2N7002E Document number: DS30376 Rev. 14 - 2 2006 T Mar 3 Apr 4 K7B = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM K7B YM Marking Information 2008 V May 5 2009 W 2010 X Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D August 2013 (c) Diodes Incorporated 2N7002E Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Continuous Pulsed VGSS 20 40 V Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25C TA = +70C ID 250 200 mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C ID 300 240 mA IS 500 mA IDM 800 mA Value 370 540 348 Units 241 C/W Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient PD RJA (Note 6) (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range RJC 91 TJ, TSTG -55 to 150 mW C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 V VGS = 0V, ID = 10A A VDS = 60V, VGS = 0V VGS = 15V, VDS = 0V IDSS 1.0 500 IGSS 10 nA VGS(th) 1.0 2.5 V VDS = VGS, ID = 250A RDS (ON) 1.6 2.0 3 4 VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA ID(ON) 0.8 1.0 A gFS 80 mS Input Capacitance Ciss 22 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF Gate resistance Rg 120 Zero Gate Voltage Drain Current @ TC = +25C @ TC = +125C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ TJ = +25C VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS (Note 8) Total Gate Charge (VGS = 4.5V) Qg 223 pC Gate-Source Charge Qgs 82 pC Gate-Drain Charge Qgd 178 pC SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time tD(ON) 7.0 20 ns Turn-Off Delay Time tD(OFF) 11 20 ns Notes: VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, ID = 250mA VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2N7002E Document number: DS30376 Rev. 14 - 2 2 of 5 www.diodes.com August 2013 (c) Diodes Incorporated 2N7002E 2.0 1.0 0.8 1.6 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) T A = -55C 0.6 0.4 0.4 0 0 1 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 5 4 3 2 0 5 ID = 250mA ID = 75mA 1 0 3 4 5 6 7 1 2 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage 5 4 3 VGS = 4.5V 2 VGS = 10V 1 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate-Source Voltage 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current 1.0 5 PD, POWER DISSIPATION (mW) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 125C 0.8 0.2 0 TA = 25C 1.2 4 3 VGS= 4.5V @ 200mA 2 VGS = 10V @ 250mA 1 350 300 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature 2N7002E Document number: DS30376 Rev. 14 - 2 3 of 5 www.diodes.com 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 25 August 2013 (c) Diodes Incorporated 2N7002E Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X 2N7002E Document number: DS30376 Rev. 14 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com August 2013 (c) Diodes Incorporated 2N7002E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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