2N7002E
Document number: DS30376 Rev. 14 - 2 1 of 5
www.diodes.com August 2013
© Diodes Incorporated
2N7002E
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = +25°C
60V 3 @ VGS = 10V 300mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
2N7002E-7-F SOT23 3,000/Tape & Reel
2N7002E-13-F SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
GS
Top View
Pin Out Confi
g
uration Equivalent Circuit
Source
Gate
Drain
K7B = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
e3
Y
Y
M
K7B
YM
K7B
YM
2N7002E
Document number: DS30376 Rev. 14 - 2 2 of 5
www.diodes.com August 2013
© Diodes Incorporated
2N7002E
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0M V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Continuous Drain Current (Note 5) VGS = 10V Steady
State TA = +25°C
TA = +70°C ID 250
200 mA
Continuous Drain Current (Note 6) VGS = 10V Steady
State TA = +25°C
TA = +70°C ID 300
240 mA
Maximum Body Diode Forward Current (Note 6) IS 500 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 370 mW
(Note 6) 540
Thermal Resistance, Junction to Ambient (Note 5) RJA 348 °C/W
(Note 6) 241
Thermal Resistance, Junction to Case (Note 6) RJC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA
VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) 1.0 2.5 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C RDS (ON)
1.6
2.0 3
4 VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
On-State Drain Current ID(ON) 0.8 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 22 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
Gate resistance Rg 120 VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Qg 223 pC
VDS = 10V, ID = 250mA
Gate-Source Charge Qgs 82 pC
Gate-Drain Charge Qgd 178 pC
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time tD(ON) 7.0 20 ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V, RGEN = 25
Turn-Off Delay Time tD(OFF) 11 20 ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002E
Document number: DS30376 Rev. 14 - 2 3 of 5
www.diodes.com August 2013
© Diodes Incorporated
2N7002E
0
0.2
0.4
0.6
0.8
1.0
01 2345
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 2 Drain Current vs. Gate-Source Voltage
GS
0.4
0.8
1.2
1.6
2.0
01234 567
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0246810
V , GA T E T O SOURCE VOLTAGE (V)
Fig. 3 On Resistance vs. Gate-Source Voltage
GS
I = 75mA
D
I = 250mA
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
1
2
3
4
5
00.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
Fig . 4 On Re sista nce vs. Drain Current
D
V = 4.5V
GS
V = 10V
GS
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
0
T , JUNCTION TEMPERATURE (°C)
Fig . 5 On-Re si st ance vs. Juncti on Tem perature
J
1
2
3
4
5
-75 -50 -25 0 25 50 75 100 125 150
V = 10V @ 250mA
GS
V = 4.5V @ 200mA
GS
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
2N7002E
Document number: DS30376 Rev. 14 - 2 4 of 5
www.diodes.com August 2013
© Diodes Incorporated
2N7002E
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
2N7002E
Document number: DS30376 Rev. 14 - 2 5 of 5
www.diodes.com August 2013
© Diodes Incorporated
2N7002E
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