IS7000 IS7000X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 Dimensions in mm 2.54 7.0 6.0 1 4 2 3 1.2 5.08 4.08 7.62 4.0 3.0 DESCRIPTION 13 0.5 Max The IS7000 is an optically coupled isolator 3.0 consisting of infrared light emitting diode and a 0.26 high voltage NPN silicon photo darlington which 3.35 0.5 has an integral base-emitter resistor to optimise ABSOLUTE MAXIMUM RATINGS switching speed and elevated temperature characteristics in a space efficient, end-stackable (25C unless otherwise specified) 4 pin dual in line plastic package. Storage Temperature -55C to + 125C FEATURES Operating Temperature -30C to + 100C l Options :Lead Soldering Temperature 10mm lead spread - add G after part no. (1/16 inch (1.6mm) from case for 10 secs) 260C Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. INPUT DIODE l High Isolation Voltage (5.3kVRMS ) l High Current Transfer Ratio ( 1000% min) Forward Current 50mA l High BVCEO ( 300V min. ) Reverse Voltage 6V Power Dissipation 70mW APPLICATIONS l Modems OUTPUT TRANSISTOR l Copiers, facsimiles l Numerical control machines Collector-emitter Voltage BVCEO 300V l Signal transmission between systems of 0.1V Emitter-collector Voltage BVECO different potentials and impedances Collector Current IC 150mA Power Dissipation 150mW OPTION SM OPTION G 7.62 SURFACE MOUNT POWER DISSIPATION Total Power Dissipation 0.6 0.1 10.46 9.86 1.25 0.75 200mW 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 27/5/03 DB92463m-AAS/A4 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output IF = 10mA 10 A VR = 4V V IC = 0.1mA ( note 2 ) Emitter-collector Breakdown (BVECO ) 0.1 V IE = 10A nA VCE = 200V % 1mA IF , 2V VCE V 20mA IF , 100mA IC VRMS See note 1 VIO = 500V (note 1) s s VCE = 2V, IC= 20mA, RL = 100 Current Transfer Ratio (CTR) Input to Output Isolation Voltage VISO 200 1000 4000 1.2 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time, tr Output Fall Time, tf 27/5/03 V 300 Collector-emitter Saturation VoltageVCE(SAT) Note 1 Note 2 1.4 Collector-emitter Breakdown (BVCEO ) Collector-emitter Dark Current (ICEO ) Coupled TEST CONDITION 100 20 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92463m-AAS/A4 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 140 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 10mA 120 100 2mA 80 60 1mA 40 IF = 0.5mA 20 0 0 -30 0 25 50 75 100 0 125 0.4 Forward Current vs. Ambient Temperature Relative current transfer ratio 50 Forward current IF (mA) 1.2 1.6 2.0 Relative Current Transfer Ratio vs. Ambient Temperature 60 40 30 20 10 0 IF = 1mA VCE= 2V 1.5 1.0 0.5 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( C ) 10-5 1.2 1.0 0.8 IF = 20mA IC = 100mA 0.6 0 25 50 75 Ambient temperature TA ( C ) 100 Collector Dark Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature Collector dark current ICEO (A) Collector-emitter saturation voltage VCE(SAT) (V) 0.8 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) 0.4 0.2 0 VCE= 200V 10-6 10-7 10-8 10-9 10-10 10-11 -30 0 25 50 75 Ambient temperature TA ( C ) 27/5/03 4mA 100 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB92463m-AAS/A4