ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
27/5/03
DB92463m-AAS/A4
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
lBSI approved - Certificate No. 8001
DESCRIPTION
The IS7000 is an optically coupled isolator
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a space efficient, end-stackable
4 pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS )
lHigh Current Transfer Ratio ( 1000% min)
lHigh BVCEO ( 300V min. )
APPLICATIONS
lModems
lCopiers, facsimiles
lNumerical control machines
lSignal transmission between systems of
different potentials and impedances
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 300V
Emitter-collector Voltage BVECO 0.1V
Collector Current IC150mA
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
10.16
0.26
OPTION G
7.62
OPTION SM
SURFACE MOUNT
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
0.26
13°
Max
2.54 Dimensions in mm
5.08
4.08
4
3
1
2
10.46
9.86
0.6
0.1 1.25
0.75
IS7000
IS7000X
DB92463m-AAS/A4
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 10mA
Reverse Current (IR)10 µA VR = 4V
Output Collector-emitter Breakdown (BVCEO )300 VIC = 0.1mA ( note 2 )
Emitter-collector Breakdown (BVECO )0.1 VIE = 10µA
Collector-emitter Dark Current (ICEO )200 nA VCE = 200V
Coupled Current Transfer Ratio (CTR) 1000 4000 %1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1.2 V20mA IF , 100mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input-output Isolation Resistance RISO 5x10 10 ΩVIO = 500V (note 1)
Output Rise Time, tr 100 µsVCE = 2V, IC= 20mA,
Output Fall Time, tf 20 µsRL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
27/5/03
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
DB92463m-AAS/A4
27/5/03
0
0.5
1.0
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
0 0.4 0.8 1.2 1.6 2.0
40
60
Collector-emitter voltage VCE ( V )
20
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector Current vs. Collector-emitter
Voltage
1.5
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector dark current ICEO (A)
Collector Dark Current vs.
Ambient Temperature
VCE= 200V
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current IF (mA)
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
IF = 20mA
IC = 100mA
80
100
120
140
Collector current IC (mA)
IF = 0.5mA
1mA
2mA
4mA 10mA
IF = 1mA
VCE= 2V
10-11
10-10
10-9
10-8
10-7
10-6
10-5
