This is information on a product in full production.
June 2015 DocID027555 Rev 2 1/25
STGB7H60DF,
STGF7H60DF, STGP7H60DF
Trench gate field-stop IGBT, H series
600 V, 7 A high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
Applications
Motor control
UPS, PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT se ries offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V
CE(sat)
temperature coef ficient and very tight
parameter distribution result in easier paralleling
operation.
TO-220
D²PAK
1
2
3
TAB
1
3
TAB
TO-220FP
12
3
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order codes Marking Packages Packaging
STGB7H60DF GB7H60DF D²PAK Tape and reel
STGF7H60DF GF7H60DF TO-220FP Tube
STGP7H60DF GP7H60DF TO-220 Tube
www.st.com
Contents STGB7H60DF, STGF7H60DF, STGP7H60DF
2/25 DocID027555 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.1 D²PAK pac kage information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3 T O-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.4 T O-220 package informati on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DocID027555 Rev 2 3/25
STGB7H60DF, STGF7H60DF, STGP7H60DF Electrical ratings
25
1 Electrical ratings
Table 2. Ab solute maximu m ratings
Symbol Parameter TO-220
D²PAK TO-220FP Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 14 14
(1)
1.
Limited by maximum junction temperature
.
A
Continuous collector current at T
C
= 100 °C 7 7
(1)
I
CP (2)
2. Pulse width limited by maximum junc tion temperature.
Pulsed collector current 28 28
(1)
A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current T
C
= 25 °C 14 14
(1)
A
Continuous forward current at T
C
= 100 °C 7 7
(1)
I
FP(2)
Pulsed forwa rd current 28 28
(1)
A
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, T
C
= 25 °C) 2500 V
P
TOT
Total dissipation at T
C
= 25 °C 88 24 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175
Table 3. Thermal data
Symbol Parameter TO-220
D²PAK TO-220FP Unit
R
thJC
Thermal resistance junction-cas e IGB T 1.7 6.2 °C/W
R
thJC
Thermal resistance junction-cas e dio de 2.8 6.25 °C/W
R
thJA
Thermal resistance junction-ambient 62.5 °C/W
Electrical characteristics ST GB7H60DF, STGF7H60DF, STGP7H60DF
4/25 DocID027555 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0 V) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 7 A 1.5 1.95
V
V
GE
= 15 V, I
C
= 7 A
T
J
= 125 °C 1.6
V
GE
= 15 V, I
C
= 7 A
T
J
= 175 °C 1.7
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 250 µA 4.8 6.2 6.9 V
I
CES
Collector cut-off current
(V
GE
= 0 V) V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0 V) V
GE
= ±20 V 250 nA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
-1050-
pF
C
oes
Output capacitance - 51 -
C
res
Reverse transfer
capacitance -23-
Q
g
Total gate charge V
CC
= 480 V, I
C
= 7 A,
V
GE
= 15 V
-46-
nCQ
ge
Gate-emitter charge - 7 -
Q
gc
Gate- collector charge - 21 -
DocID027555 Rev 2 5/25
STGB7H 60DF, ST G F7H60 DF , STGP 7H6 0DF Electri cal chara ct er istics
25
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
-30-ns
t
r
Current rise time - 12.2 - ns
(di/dt)
on
Turn-on current slope -459-A/µs
t
d(on)
Turn-on delay time V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
T
J
= 175 °C
-30-ns
t
r
Current rise time - 12.8 - ns
(di/dt)
on
Turn-on current slope -440-A/µs
t
r(Voff)
Off voltage rise time V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
-24-
nst
d(off)
Tu rn-off delay time - 160 -
t
f
Current fall time - 69 -
t
r(Voff)
Off voltage rise time V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
T
J
= 175 °C
-31-
nst
d(off)
Tu rn-off delay time - 164 -
t
f
Current fall time - 99 -
t
sc
Short-circ uit withstand time V
CC
360 V, V
GE
= 15 V,
R
G
= 47 Ω-5-µs
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on (1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
-99-
µJE
off (2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching loss es - 100 -
E
ts
Total switchi ng loss es - 199 -
E
on (1)
Turn-on switching losses V
CE
= 400 V, I
C
= 7 A,
R
G
= 47 Ω, V
GE
= 15 V
T
J
= 175 °C
- 202 -
µJE
off (2)
Turn-off switching loss es - 149 -
E
ts
Total switchi ng loss es - 351 -
Electrical characteristics ST GB7H60DF, STGF7H60DF, STGP7H60DF
6/25 DocID027555 Rev 2
Table 8. Collector-emitte r diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on-voltage I
F
= 7 A - 1.5 2.1 V
I
F
= 7 A, T
J
= 175 °C 1.15
t
rr
Reverse recovery time V
CC
= 400 V; I
F
= 7 A;
di
F
/dt = 100 A/µs
- 136 ns
Q
rr
Reverse recovery charge - 104 nC
I
rrm
Reverse recovery current - 2.25 A
t
rr
Reverse recovery time V
CC
= 400 V; I
F
= 7 A;
di
F
/dt = 100 A/µs
T
J
= 175 °C
- 154 ns
Q
rr
Reverse recovery charge - 388 nC
I
rrm
Reverse recovery current - 4.6 A
DocID027555 Rev 2 7/25
STGB7H 60DF, ST G F7H60 DF , STGP 7H6 0DF Electri cal chara ct er istics
25
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperatu re for D
2
PAK and TO-220 Figure 3. Collector current vs. case temperature
for D
2
PAK and TO-220
,*%7+')33'7





   
3727
:
7&&
9*(97-&
,*%7+')3&&7


   
,&
$
7&&
9*(97-&
Figure 4. Power dissipation vs. case
temperature for TO-220FP Figure 5. Collector current vs. case temperature
for TO-220FP
,*%7+'))3'7




   
3727
:
7&&
9*(97-&
,*%7+'))&&7

   
,&
$
7&&
9*(97-&
Figure 6. Output characteristics (T
J
= 25°C) Figure 7. Output characteristics (T
J
= 175°C)
,*%7+')32&





,&
$
9&(9
9*( 9 9
9
9
9
,*%7+')32&





,&
$
9&(9
9*( 9 9
9
9
9
Electrical characteristics ST GB7H60DF, STGF7H60DF, STGP7H60DF
8/25 DocID027555 Rev 2
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. C ollector current vs. switching
frequency for D
2
PAK and TO-220 Figure 11. Collector current vs. switching
frequency for TO-220FP
,*%7+')39&(7








   
9&(VDW
9
7-&
9*( 9
,& $
,& $
,& $
,*%7+')39&(&





  
9&(VDW
9
,&$
9*( 9
7- &
7- &
7- &
,*%7+')3&&6





,&
$
IN+]
7& &
7& &
GXW\F\FOH 9&& 9
5* 9*( 97- &
5HFWDQJXODUFXUUHQWVKDSH
,*%7+')))&&6


,&
$
IN+]
5HFWDQJXODUFXUUHQWVKDSH
7& &
7& &
GXW\F\FOH 9&& 9
5* 9*( 97- &
Figure 12. Forward bias safe opera ting area for
D
2
PAK and TO-220 Figure 13. Forward bias safe op erating area for
TO-220FP
,*%7+')3)62$




,&
$
9&(9
VLQJOHSXOVH7& &
7-&9*( 9
WS V
WS V
WS V
WS PV
,*%7+')))62$




,&
$
9&(9
VLQJOHSXOVH7& &
WS V
WS V
WS V
WS PV
7-&9*( 9
DocID027555 Rev 2 9/25
STGB7H 60DF, ST G F7H60 DF , STGP 7H6 0DF Electri cal chara ct er istics
25
Figure 14. Transfer characteristics Figure 15. Diode V
F
vs. forward current
,*%7+')37&+





,&
$
9*(9
9&( 9
7- &
7- &
,*%7+')3'9)




  
9)
9
,)$
7- &
7- &
7- &
Figure 16. Normalized V
GE(th)
vs. junction
temperature Fig ure 17. Normali ze d V
(BR)CES
vs. junction
temperature
,*%7(,19*(






   
9*(WK
QRUP
7-&
,& ȝ$9&( 9*(
,*%7(,19%5



   
9%5&(6
QRUP
7-&
,& P$
Figure 18. Capa citance variation Figure 19. Gate charge vs. gate-emitter voltage
,*%7+')3&95




 
&
S)
9&(9
&,(6
&2(6
&5(6
I 0+]
,*%7+')3*&*(



9*(
9
4JQ&
9&& 9,& $,* P$
Electrical characteristics ST GB7H60DF, STGF7H60DF, STGP7H60DF
10/25 DocID027555 Rev 2
Figure 20. Switching loss vs. collector current Figure 21. Switching loss vs. gate resistance
,*%7+')36/&






(
P-
,&$
9&& 95* 
9*( 97- &
(2))
(21
,*%7+')36/*




      
(
P-
5*
9&& 9,& $
9*( 97- &
(2))
(21
Figure 22. Switching loss vs. temperature Figure 23. Switching loss vs. collector-emitter
voltage
,*%7+')36/7



   
(
P-
7-&
9&& 9,& $
5* 9*( 9
(2))
(21
,*%7+')36/9





   
(
P-
9&(9
,& $5* 
(2))
(21
9*( 97- &
Figure 24. Short circuit time and current vs. V
GE
Figure 25. Switching times vs. collector current
,*%7+')36&9











W
V
9*(9
9&&97-&
W6&
,6&
,6&
$
,*%7+')367&




W
QV
,&$
9&& 99*( 9
WI
WGRII
WGRQ
WU
5* 7- &
DocID027555 Rev 2 11/25
STGB7H 60DF, ST G F7H60 DF , STGP 7H6 0DF Electri cal chara ct er istics
25
Figure 26. Switching times vs. gate resistance Figure 27. Reverse recovery current vs. diode
current slope
,*%7+')3675




     
W
QV
5*
9&& 99*( 9
WI
WGRII
WGRQ
WU
,& $7- &
,*%7+')355&


   
,UUP
$
GLGW$V
9&& 99*( 9
,) $7- &
Figure 28. Reverse recovery time vs. diode
current slope Figure 29. Reverse recovery charge vs. diode
current slope
,*%7+')3557





   
WUU
QV
GLGW$V
9&& 99*( 9
,) $7- &
,*%7+')3554






    
4UU
&
GLGW$V
9&& 99*( 9
,) $7- &
Figure 30. Reverse recovery energy vs. diode
current slope
,*%7+')355(






    
(UU
P-
GLGW$V
9&& 99*( 9
,) $7- &
Electrical characteristics ST GB7H60DF, STGF7H60DF, STGP7H60DF
12/25 DocID027555 Rev 2
Figure 31. Thermal impedance for D
2
PAK and TO-220 IGBT
Figure 32. Thermal impedance for D
2
PAK and TO-220 diode
.


    
W
S
=
WK
N5
WKM&
į W
S
Ϩ
Ϩ
=
WK
 N5
WKMF
į W
S
Ϩ
W
S
Ϩ
=WK727B%
W
SV
*&


.
į 
į 
į 
į 
į 
į 
6,1*/(38/6(
WS
=WKN5WKM&
į WSϨ
Ϩ
=
WK
 N5
WKMF
į W
S
Ϩ
W
S
Ϩ
WS
V





DocID027555 Rev 2 13/25
STGB7H 60DF, ST G F7H60 DF , STGP 7H6 0DF Electri cal chara ct er istics
25
Figure 33. Thermal impedance for TO-220FP IGBT
Figure 34. Therma l impeda nce for TO-220FP diode
=WK72)7B%
W
S
=
WK
N5
WKM&
į W
S
Ϩ
Ϩ
=
WK
 N5
WKMF
į W
S
Ϩ
W
S
Ϩ

















W
S
V
Test circuits STGB7H60DF, STGF7H60DF, STGP7H60DF
14/25 DocID027555 Rev 2
3 Test circuits
Figure 35. Test circuit for inductive load
switching Figure 36. Gate charge test circuit
Figure 37. Switching waveform Figure 38. Diode reverse recovery waveform
$$
&
(
*
%
5
*
*
& 
) 
)
/  )
9
&&
(
' 8 7
%
$0 Y
$0Y
9L9*0$;
3:
,* &2167
9&&
9 Nȍ Nȍ
ȍ
Nȍ
Nȍ
Nȍ

)
'87
Q)
9*
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
W
$0Y

9550
GYGW
GLGW
,550
,)
WUU
WVWI
4UU
,550
DocID027555 Rev 2 15/25
STGB7H60DF, STGF7H60DF, STGP7H60DF Package information
25
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 D²PAK package information
Figure 39. D²PAK (TO-263) type A package outline
Package information STGB7H60DF, STGF7H60DF, STGP7H60DF
16/25 DocID027555 Rev 2
Table 9. D²PAK (TO-263) type A mechanical data
Dim. mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10 10.40
E1 8.50 8.70 8.90
E2 6.85 7.05 7.25
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2
DocID027555 Rev 2 17/25
STGB7H60DF, STGF7H60DF, STGP7H60DF Package information
25
Figure 40. D²PAK recommended footprint
(a)
a. All dimension are in millimeters
)RRWSULQW