MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3053 Features * * * * Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W Rth(jc) is 35OC/W, Rth(ja) is 175OC/W Maximum Ratings Symbol V CEO V CBO V EBO IC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage Collector Current Operating Junction Temperature Storage Temperature Rating 40 60 5.0 700 -55 to +150 -55 to +150 TO-39 Unit V V V mA O C O C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 50 --- Vdc 60 --- Vdc 5.0 --- Vdc --- 0.25 uAdc --- 0.25 uAdc 50 250 --- --- 1.4 Vdc --- 1.7 Vdc 100 --- MHZ --- 15 pF --- 80 pF OFF CHARACTERISTICS V CEO(SUS) V CER(SUS) V (BR)CBO V (BR)EBO ICBO IEBO Collector-Emitter Voltage* (IC=100uAdc, IB =0) Collector-Emitter Voltage* (RBE =10 OHM, IC=10mAdc) Collector-Base Breakdown Voltage (IC=0.1mAdc, IE =0) Emitter-Base Breakdown Voltage (IE =0.1mAdc, IC=0) Collector-Base Cutoff Current (VCB=30Vdc, IE =0) Emitter-Base Cutoff Current (VEB =4.0Vdc, IC=0) ON CHARACTERISTICS hFE V CE(sat) V BE(sat) fT COBO CIBO Static Forward Current Transfer ratio (IC=0.15Adc, V CE=10Vdc) Collector-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) Base-Emitter Saturation Voltage (IC=150mAdc, IB =15mAdc) Transistion Frequency (VCE=10Vdc, IC=0.05Adc, f=20MH Z) Output Capacitance (VCB=10Vdc, f=1.0MHZ) Input Capacitance (VEB =10Vdc, f=1.0MHZ) DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN .335 .370 8.509 .305 .335 7.747 .240 .260 6.096 .50 .75 12.7 .200 5.08 .029 .045 7.366 ----.050 ----.009 .031 0.229 44 46 44 .028 .034 0.711 .016 .021 0.406 MAX 7.62 8.509 6.604 19.05 11.43 1.27 7.874 46 0.864 0.533 NOTE - -7<3 www.mccsemi.com Revision: 1 2003/04/17