2N3053
Medium Power
Silicon NPN
Planar Transistor
Features
• VCEO=40V
• IC=0.7A
• Ptot=1.0W
• Rth(jc) is 35OC/W, Rth(ja) is 175OC/W
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Breakdown Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 700 mA
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(SUS) Collector-Emitter Voltage*
(IC=100uAdc, IB=0) 40 --- Vdc
VCER(SUS) Collector-Emitter Voltage*
(RBE=10 OHM, IC=10mAdc) 50 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=0.1mAdc, IE=0) 60 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=0.1mAdc, IC=0) 5.0 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=30Vdc, IE=0) --- 0.25 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=4.0Vdc, IC=0) --- 0.25 uAdc
ON CHARACTERISTICS
hFE Static Forward Current Transfer ratio
(IC=0.15Adc, VCE=10Vdc) 50 250 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc) --- 1.4 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc) --- 1.7 Vdc
fT Transistion Frequency
(VCE=10Vdc, IC=0.05Adc, f=20MHZ) 100 --- MH Z
COBO Output Capacitance
(VCB=10Vdc, f=1.0MHZ) --- 15 pF
CIBO Input Capacitance
(VEB=10Vdc, f=1.0MHZ) --- 80 pF
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .335 .370 8.509 7.62
-
B .305 .335 7.747 8.509
-
C .240 .260 6.096 6.604
D .50 .75 12.7 19.05
E .200 5.08
-
7<3
F .029 .045 7.366 11.43
G ----- .050 ----- 1.27
H .009 .031 0.229 7.874
J 44° 46° 44° 46°
K .028 .034 0.711 0.864
L .016 .021 0.406 0.533
TO-39
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Revision: 1 2003/04/17
omponents
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