Silicon Unijunction Transistor D5J45 Please refer to specification 2N2646-47 for further information on this device. absolute maximum ratings: (25C) Power Dissipation (Note 1) 300 mw RMS Emitter Current 50 mA Peak Emitter Current (Note 2) 2Amperes sEDEC OUTLINE TO-8 Emitter Reverse Voltage 30 Volts LEAD COMEISORATION Interbase Voltage 35 Volts facet re Se at Operating Temperature Range 65C to +125C Se ee een enon Storage Temperature Range 65C to +150C are i te electrical characteristics: (25C) Intrinsic Standoff Ratio (Vz, = 10V) (Note 4) Interbase Resistance (Vay = 3V, In = 0) Emitter Saturation Voltage (Vz; = 10V, I; =.50 ma) Modulated Interbase Current (Vpp = 10V, I: = 50 ma) Emitter Reverse Current (Vpox = 30V, Ip; = 0) Peak Point Emitter Current (Vp, = 25V) Valley Point Current (Vy, = 20V, Riz = 100 2) Base-One Peak Pulse Voltage (Note 3) NOTES: 1. tive to 2 maximum width tab. NOTE 3: Measured from max. diameter of the actual device. LEADI EMITTER... Eg. BASE ONE... BASE TWO..82 Leab2 028 ALL DIMEMLIN INCHES AND ARE (NOTE 3) REFERENCE UNLESS TOLERANCED MIN. TYP. MAX, .68 .82 Rszo AT 9.1 kQ Vecsar) 2 Volts Trecmop) 12 mA Tyo 3) pA Ip 2 pA ly 8 mA Voni 6 Volts Derate 3.0 MW/C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. 2. Capacitor discharge 10, F or less, 30 volts or less. 3. The Base-One Peak Pulse Voltage is measured in the circuit below. This specification on the D5345 is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits. 4. The intrinsic standoff ratio , is essentially constant with interbase voltage. is defined by the equation: Vp = Van + Vo Where Vp = Peak Point Emitter Voltage Vaz = Interbase Voltage Vp = Junction Diode Drop (Approx. .5V) FIGURE 1 1060