MOTORCLA SC XSTRS/R EF 12e 0 ff 6367254 ooaeeon & ff : T2423 . , |. P2N3019_ | oo CASE 29-03, STYLE 1 T0-92(TO-226AE) _it j : MAXIMUM RATINGS Rating Symbol! Value Unit Collector-Emitter Voltage VCEO 80 Vde Collector-Base Voltage VcoBO 120 Vde 3 Collector Emitter-Base Voltage VEBO 7.0 . Vde Collector Current Continuous te 1.0 Adc 2 - Tota! Device Dissipation Ta = 25C Pp 1.0 Watts Base x Derate above 25C 8.0 mW/C Total Device Dissipation Tc = 25C Po 2.5 Watts 1 1 Emitter Derate above 25C 20 mW/C 2 3 Operating and Storage Junction Ty. Tstg |-55 to + 150 C Temperature Range - < ONE WATT THERMAL CHARACTERISTICS Characteristic Symbol Max Unit AMPLIFIER TRANSISTORS Thermal Resistance, Junction to Case RoJc 50 C/W NPN SILICON Therma! Resistance, Junction to Ambient} RaJA 125 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol [ Min Max Unit OFF CHARACTERISTICS Colfector-Emitter Breakdown Voltage (1) ViBR)CEO 80 _ Vde (l = 30 mAdc, Ig = 0) . . Collector-Base Breakdown Voltage VIBRICBO 120 _ Vde {Ig = 100 wAde, tg = 0) Emitter-Base Breakdown Voltage V(BR)EBO 7.0 - Vde {Ig = 100 zAde, ic = 0) . Collector Cutoff Current icBo pAdc (cp = 90 Vde, IE = 0) _ 0.01 (Vcp = 90 Vde, le = 0, TA = +150C) _ 10 Emitter Cutoff Current eEBO - 0.01 pAdc (Vege = 5.0 Vde, Io = 0} ON CHARACTERISTICS DC Current Gain (1) hee - {lc = 0.1 mAdc, Voce = 10 Vde) P2N3019 50 - (I = 10 mAdc, Veg = 10 Vdc) P2N3019 90 _ {le = 150 mAdc, Voge = 10 Vde) P2N3019 100 300 {Ic = 150 mAde, VcE = 10 Vde, Te = 55C) P2N3019 40 - {Ic = 500 mAdc, Voce = 10 Vde) P2N3019 50 - {lg = 1.0 Ade, Voge = 10 Vde) 15 - Collector-Emitter Saturation Voltage VcE(sat) Vde (Ig = 150 mAdec, lg = 15 mAdc) . - 0.2 (I = 500 mAdc, Ig = 50 mAdc) _ 0.5 Base-Emitter Saturation Voltage VBEIsat) - 1.1 Vde (I = 150 mAdce, Ig = 15 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 80 _ MHz (Ic = 50 mAde, VcE = 10 Vde, f = 20 MHz) P2N3019 MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-451~ - sone ee foo Sek te nee wae MOTORCLA SC XSTRS/R F 12E D 3 b367254 OO8b207 & i - P2N3019 T2RG- 23 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbof Min Max Unit + Output Capacitance Cobo - 12 pF (Vcp = 10 Vde, Ie = 0, f = 1.0 MHz) Input Capacitance Cibo _- 60 pF (Vge = 0.5 Vdc, Ic = 0, f = 1.0 MHz) Small-Signal Current Gain Kfe 80 400 _ (Ic = 1.0 mAde, Veg = 5.0 Vde, f = 1.0 kHz) _P2N3019 Collector Base Time Constant thCe _ 400 ps (fe = 10 mAde, Vep = 10 Vde, f = 4.0 MHz) P2N3019 Noise Figure Ne - 40 dB : (Ic = 100 pAdc, Vce = 10 Vde, Rg = 1.0 kohms, f = 1.0 kHz) . (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 1.0%, - DC CURRENT GAIN . P2N3019 . CURRENT GAIN BANOWIDTH PRODUCT day eee npg, NORMALIZED DC CURRENT GAIN 18 be, COLLECTOA CURRENT (mA) ip, COLLECTOR CURRENT (M.A.B.C.) CAPACITANCE ON" VOLTAGES 10 rrr Vee{eat) > = 10 C, CAPACITANCE (pF) 10 10 100 1600 Yn REVERGE VOLTAGE () Ie, COLLECTOR CUMMENT (mA) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-452MOTORCLA SC XSTRS/R F u2e o Bf o3e7254 ooanzca t Of NE, NCISE FIGURE (dB) ON, TEMPERATURE COEFFICIENT (mV/C} - = so 2 2 eo 5S OU e @ os oo ge @ _- >. -P2N3019 T-29 O33 , TEMPERATURE COEFFICIENTS FREQUENCY EFFECTS a ~ o NF, NOISE FIGURE (dB) ny 2 o 50 100 $00 1000 a1 10 10a fe, COLLECTOR CURRENT {mA} 1, FREQUENCY (kHz) CURRENT GAIN BANDWIDTH PRODUCT vereus COLLECTOR CURRENT 1 kHz hyy SOURCE RESISTANCE EFFECTS P2N3019 hye, CURRENT GAIN 10.0 1000 1000.0 Rg, SOURCE RESISTANCE (k OHMS} 0.1 (a fs bc COLLECTOR CURRENT (mA de) 1.0 MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-453