SFH 300-3 - OSRAM OPTO SEMICONDUCTORS

SFH 300

SFH 300 FA

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

Lead (Pb) Free Product - RoHS Compliant

SFH 300 SFH 300 FA

2007-04-02 1

Wesentliche Merkmale

• Speziell geeignet für Anwendunge n im Bereich

von 450 nm bis 1100 nm (SFH 300) und bei

880 nm (SFH 300 FA)

• Hohe Linearität

• 5 mm-Plastikbauform im LED-Gehäuse

• Gruppiert lieferbar

Anwendungen

• Computer-Blitzlichtgeräte

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code Typ

Type Bestellnummer

Ordering Code

SFH 300 Q62702P1189 SFH 300 FA Q62702-P1193

SFH 300-3/4 Q62702P3586 SFH 300 FA-3/4 Q62702-P3585

Features

• Especially suitable for applications from

450 nm to 1100 nm (SFH 300) and of 880 nm

(SFH 300 FA)

• High linearity

• 5 mm LED plastic package

• Available in groups

Applications

• Computer-controlled flashes

• Photointerrupters

• Industrial electronics

• For control and drive circuits

2007-04-02 2

SFH 300, SFH 300 FA

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 … + 100 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 35 V

Kollektorstrom

Collector curr ent IC50 mA

Kollektorspitzenstrom, τ < 10 μs

Collector surge current ICS 100 mA

Emitter-Kollektorspannung

Emitter-collector voltage VEC 7 V

Verlustleistung, TA = 25 °C

Power dissipation Ptot 200 mW

Wärmewiderstand

Thermal resistance RthJA 375 K/W

SFH 300, SFH 300 FA

2007-04-02 3

Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

SFH 300 SFH 300 FA

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 880 880 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectr al range of sens itivity

S = 10% of Smax

λ450 … 1100 730 … 1120 nm

Bestrahlungsempfindliche Fläche

Radiant sensitive area A0.11 0.11 mm2

Abmessungen der Chipfläche

Dimensions of chip area L × B

L × W0.5 × 0.5 0.5 × 0.5 mm × mm

Halbwinkel

Half angle ϕ± 25 ± 25 Grad

deg.

Kapazität

Capacitance

VEC = 0 V, f = 1 MHz, E = 0

CCE 7.5 7.5 pF

Dunkelstrom

Dark current

VCE = 20V, E = 0

ICEO 1 (≤ 50) 1 (≤ 50) nA

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SFH 300, SFH 300 FA

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

-2 -3 -4

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

SFH 300:

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

IPCE

0.63 … 1.25

3.0

1 … 2

4.8

≥ 1.6

7.7

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf7.5 10 10 μs

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = IPCEmin1) × 0.3,

Ee = 0.5 mW/cm2

VCEsat 130 140 150 mV

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.

1) IPCEmin is the min. photocurrent of the specified group.

SFH 300, SFH 300 FA

2007-04-02 5

Relative Spectral Sensitivity,

SFH 300 Srel = f (λ)

Photocurrent

IPCE/IPCE 25° = f (TA), VCE = 5 V

Directional Characteristics

Srel = f (ϕ)

100

400 500 600 700 800 900 1000 1100

λnm

Srel

Relative Spectral Sensitivity,

SFH 300 FA Srel = f (λ)

Photocurrent

IPCE = f (Ee), VCE = 5 V

100

400 500 600 700 800 900 1000 1100

Srel

Dark Current ICEO/ICEO25° = f (TA),

VCE = 20 V, E = 0

Dark Current

ICEO = f (VCE), E = 0

Collector-Emitter Capacitance

CCE = f (VCE), f = 1 MHz, E = 0

0.01

0.1

100

1000

10000

-25 0 25 50 75 100

CEO

°C

0.01

0.1

0 5 10 15 20 25 30 35

ICEO

VCE

1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

CCE

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SFH 300, SFH 300 FA

Maßzeichnung

Package Outlines

Maße in mm (inch) / Dimensions in mm (inch).

Lötbedingungen

Soldering Conditions

Wellenlöten (TTW) (nach CECC 00802)

TTW Soldering (acc. to CECC 00802)

0.6 (0.024)

0.4 (0.016)

5.9 (0.232)

5.5 (0.217)

4.5 (0.177)

4.2 (0.165)

7.8 (0.307)

7.5 (0.295)

9.0 (0.354)

8.2 (0.323)

25.2 (0.992)

24.2 (0.953)

1.8 (0.071)

1.2 (0.047)

2.54 (0.100)

spacing

0.6 (0.024)

0.4 (0.016)

1.0 (0.039)

0.7 (0.028)

ø5.1 (0.201)

Chip position

Area not flat

Emitter

GEOY6652

1.3 (0.051)

1.0 (0.039)

11.6 (0.457)

11.2 (0.441)

Collector

OHLY0598

050 100 150 200 250

100

150

200

250

300

235 C

10 s

C... 260

1. Welle

1. wave

2. Welle

2. wave

5 K/s 2 K/s

ca 200 K/s

CC... 130100

2 K/s Zwangskühlung

forced cooling

Normalkurve

standard curve

Grenzkurven

limit curves

SFH 300, SFH 300 FA

2007-04-02 7

Published by

OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organiza tion.

Packing

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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.

1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected

to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.

2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.