CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x A Chips for absolute 3x3mm Pressure Sensors Diameter of Wafer Die Size Metallization Frontside Passivation Chip Backside Die Thickness Dicing Pad Size in Diameter Pad Pitch 150 mm / 6" 3 mm x 3 mm Aluminum Oxide / CVD Nitride / Plasma Nitride / EPOS Silicon 850 100 m Sawing 200 m 500 m Sectional View: (not to scale) plasma nitride EPOS Metallization oxide, CVD nitride epitaxial layer / piezo resistors systemchip AuSi - alloy constraint chip Front Side: Vin + Vin + Vout + Substrate Substrate Vout - Vin Vout - 8/99 CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x A Electrical Characteristics for 3x3mm Pressure Sensor Chips Electrical Characteristics at T= 25C Parameter Symbol Bridge Resistance (1) RB Output Voltage (2) Vout VBR Leakage Current (4) IR max Unit 4 8 kOhm mV E1132A E1133A E1134A E1135A E1136A E1137A, E1138A, E1139A Breakdown Voltage (3) min 90 10 10 0 -25 -25 340 180 110 70 40 25 20 100 V 0 20 nA Testing Conditions (1) Bridge Resistance is measured between Pad 1 and 4 with Vin = 5V (2) Output Voltage is measured at absolute pressure p= 95 2 kPa (E113xA) between Pad 2 (Vout+) and Pad 5 (Vout-) with Vin+ = 5V. Vin- is grounded. (3) Breakdown Voltage: Pads 1,2,4,5 grounded. Using a constant current of 100A between Pad 3 (plus) and ground (minus) the breakdown voltage is measured between Pad 3 and ground. (4) Leakage Current: Pads 1,2,4,5 are short circuited. A reverse bias VR=20V is applied between Pad 3 (plus) and ground (minus). IR is measured between ground (minus) and Pads 1,2,4,5. SIEMENS AG Vin + Vin + 1 Substrate 3 Vout - 5 2 Vout + Substrate 4 Vin Vout - 8/99 CHIPDATEN / DIE DATA (Mechanisch-technische Kenndaten / mechanical-technical characteristic data) E113x A Typical Data of 3x3mm Pressure Sensor Chips Typical Electrical Characteristics at T= 25C Chip E1132A E1133A E1134A E1135A E1136A E1137A E1138A E1139A Pressure Range pN (kPa) 60 160 400 1000 2500 6000 16000 40000 Sensitivity s (mV/V/kPa) Full Scale Span p=pN, Vin = 5V Vfin (mV) Linearity error FL (% / Vfin) 0,4300 0,2000 0,1100 0,0520 0,0210 0,0100 0,0053 0,0022 130 160 220 260 260 300 420 440 +- 0,3 +- 0,3 +-0,3 +-0,3 +-0,3 +-0,3 +-0,3 +-0,3 Parameter Symbol typ. Unit Offset Voltage (p= p0, Vin= 5V) V0 +- 10 mV pressure hysteresis (1) PH +- 0,1 % / K (1) change of output voltage at atmospheric pressure after pressure cycle to PN. Typical Temperature Characteristics Note that temperature coefficient and -hysteresis of Offset and Span are strongly dependent on the mounting of the sensor. Parameter Symbol typ. Unit Temperature Coefficient of Span (1) TC Vfin -0,17 %/K Temperature Coefficient of Offset (1) TC V0 %/K E1132...6 A +- 0,02 E1137...9 A +- 0,01 Temperature Coefficient of Bridge Resistance (2) TC RB +0,26 % / K Termperature Hysteresis (3) TH +- 0,2 % / Vfin (1) change in value of V-fin between 25C and 125C relative to Vfin(25C) (2) change in value of RB between 25C and 125C relative to RB(25C) (3) change in V0(25C) or Vfin(25C) after temperature cycle 25C - 125C - 25C relative to Vfin(25C) 8/99