CHIPDATEN / DIE DATA
(Mechanisch-technische Kenndaten / mechanical-technical characteristic data)
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systemchip
constraint
chip
AuSi - alloy
epitaxial layer /
piezo resistors
EPOS Metallization
oxide, CVD nitride
plasma nitride
Vin +
Vin +
Substrate
Vout -
Vout +
Substrate
Vin -
Vout -
Diameter of Wafer 150 mm / 6“
Die Size 3 mm x 3 mm
Metallization Frontside Aluminum
Passivation Oxide / CVD Nitride / Plasma Nitride / EPOS
Chip Backside Silicon
Die Thickness 850 ± 100 µm
Dicing Sawing
Pad Size in Diameter 200 µm
Pad Pitch 500 µm
Sectional View:
(not to scale)
Front Side:
E113x A
Chips for absolute 3x3mm Pressure Sensors
CHIPDATEN / DIE DATA
(Mechanisch-technische Kenndaten / mechanical-technical characteristic data)
8/99
Testing Conditions
(1) Bridge Resistance is measured between Pad 1 and 4 with Vin = 5V
(2) Output Voltage is measured at absolute pressure p= 95 ± 2 kPa (E113xA) between Pad 2
(Vout+) and Pad 5 (Vout-) with Vin+ = 5V. Vin- is grounded.
(3) Breakdown Voltage: Pads 1,2,4,5 grounded. Using a constant current of 100µA between Pad
3 (plus) and ground (minus) the breakdown voltage is measured between Pad 3 and ground.
(4) Leakage Current: Pads 1,2,4,5 are short circuited. A reverse bias VR=20V is applied
between Pad 3 (plus) and ground (minus). IR is measured between ground (minus) and Pads
1,2,4,5.
E113x A
Electrical Characteristics for 3x3mm Pressure Sensor Chips
SIEMENS AG
Vin +
Vin +
Substrate
Vout -
Vout +
Substrate
Vin -
Vout -
1
3
54
2
Electrical Characteristics at T= 25°C
Parameter Symbol min max Unit
Bridge Resistance (1) RB 4 8 kOhm
Output Voltage (2) Vout mV
E1132A 90 340
E1133A 10 180
E1134A 10 110
E1135A 070
E1136A -25 40
E1137A, E1138A, E1139A
-25 25
Breakdown Voltage (3) VBR 20 100 V
Leakage Current (4) IR 020 nA
CHIPDATEN / DIE DATA
(Mechanisch-technische Kenndaten / mechanical-technical characteristic data)
8/99
E113x A
Typical Data of 3x3mm Pressure Sensor Chips
Typical Electrical Characteristics at T= 25°C
Parameter Symbol typ. Unit
Temperature Coefficient of Span (1) TC Vfin -0,17 % / K
Temperature Coefficient of Offset (1) TC V0 % / K
E1132...6 A +- 0,02
E1137...9 A +- 0,01
Temperature Coefficient of Bridge Resistance (2) TC RB +0,26 % / K
Termperature Hysteresis (3) TH +- 0,2 % / Vfin
Typical Temperature Characteristics
Note that temperature coefficient and -hysteresis of Offset and Span are strongly dependent on
the mounting of the sensor.
(1) change in value of V-fin between 25°C and 125°C relative to Vfin(25°C)
(2) change in value of RB between 25°C and 125°C relative to RB(25°C)
(3) change in V0(25°C) or Vfin(25°C) after temperature cycle 25°C - 125°C - 25°C relative to Vfin(25°C)
Parameter Symbol typ. Unit
Offset Voltage (p= p0, Vin= 5V) V0 +- 10 mV
pressure hysteresis (1) PH +- 0,1 % / K
(1) change of output voltage at atmospheric pressure after pressure cycle to PN.
Chip
Pressure
Range
pN (kPa)
Sensitivity
s (mV/V/kPa)
Full Scale Span
p=pN, Vin = 5V
Vfin (mV)
Linearity
error
FL (% / Vfin)
E1132A 60 0,4300 130 +- 0,3
E1133A 160 0,2000 160 +- 0,3
E1134A 400 0,1100 220 +-0,3
E1135A 1000 0,0520 260 +-0,3
E1136A 2500 0,0210 260 +-0,3
E1137A 6000 0,0100 300 +-0,3
E1138A 16000 0,0053 420 +-0,3
E1139A 40000 0,0022 440 +-0,3
