BUH515D
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■HIGH VOLTAGE CAPABILITY
■FULLY INS ULAT E D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
■NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TVS
DESCRIPTION
The BUH515D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
struct ure to enhance switc hing speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors. INT E R NAL SCH E M ATI C DIAG RA M
July 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB = 0) 700 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 8 A
ICM Collector Pe ak Cu rrent (tp < 5 ms) 15 A
IBBase Current 5 A
IBM Base Peak Current (tp < 5 ms) 8 A
Ptot Total Dissipation at Tc = 25 oC50W
V
isol Insulation Withsta nd Vo ltage (RMS) from All
Three L eads to Exernal Heatsink 2500 V
Tstg Storage Temp erature -65 to 150 oC
123
ISOWATT218
R Typ. = 12 Ω
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 13 00 V
VCE = 15 00 V
VCE = 15 00 V Tj = 125 oC
10
0.2
2
µA
mA
mA
IEBO Emitter Cut-off Cu rrent
(IC = 0) VEB = 5 V 200 mA
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 1.25 A 1.5 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5 A IB = 1.25 A 1.3 V
hFE∗DC Current Ga in IC = 5 A VCE = 5 V
IC = 5 A VCE = 5 V Tj = 100 oC5
310
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC = 400 V IC = 5 A
IB1 = 1.5 A IB2= -2.5 A 2.4
170 3.6
260 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 5 A f = 15625 Hz
IB1 = 1.25 A IB2 = -2.5 A
Vceflyback = 10 50 sin
π
10 106
t V
3.5
450 µs
ns
VFDiode Forward Voltage IF = 5 A 2 V
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Area Therm al Im pedanc e
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D erating Curve
Collector Emitter Saturation Voltage
Power Loss es at 16 KHz
DC Current Gain
Base Em itt er Saturation Volt age
Switching Time Inductive Load at 16KHz
(see figure 2)
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Switching Time Resistive Load
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at 16 KHz frequencies for
choosing the optimum negative drive. The test
circ uit is illus trat ed in fig. 1.
Inductance L1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(
I
C
)2 = 1
2
C
(
V
CEfly
)2
ω = 2 π
f
= 1
√
L
C
Where IC= operating collector current, VCEfly=
flyback voltage, f = frequency of oscillation during
retrace.
B ASE DRIV E INFORMATION
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Figure 1: Induct ive Load Switc hing Test Circuit
Figure 2: Swit ching W aveforms in a Def lect i on Circ uit
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange ) Recommended: 0. 8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
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subject t o change without notice. This publication supersedes and r eplaces al l information previously suppl ied. STMicroelectronics pr oducts
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