2N918UB Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: * Ultra-high frequency transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 * JAN level (2N918UBJ) * JANTX level (2N918UBJX) * JANTXV level (2N918UBJV) * JANS level (2N918UBJS) * JANSR level (2N918UBJSR) * JANSF level (2N918UBJSF) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV and JANS * * * * * Radiation testing (total dose) upon request Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/301 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANS, JANSR AND JANSF * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 30 Unit Volts Volts Emitter-Base Voltage VEBO 3 Volts IC 50 mA PT 200 1.14 mW mW/C TJ TSTG -65 to +200 C Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature Specifications Subject to Change Copyright(c) 2010 Rev. G SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N918UB Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO Test Conditions IC = 3 mA Max Units Volts 10 1 1 10 10 nA A A nA A 15 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Base-Emitter Saturation Voltage VBEsat Test Conditions IC = 0.5 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts IC = 10 mA, VCE = 10 Volts IC = 3 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA Collector-Emitter Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA DC Current Gain Typ VCB = 25 Volts VCB = 30 Volts VCB = 25 Volts, TA = 150C VEB = 2.5 Volts VEB = 3 Volts ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 On Characteristics Parameter Min Symbol hFE1 hFE2 hFE3 hFE4 Min 10 20 20 10 Typ Max Units 200 1.0 Volts 0.4 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Noise Figure NF Power Gain Gpe Collector Base time constant rb'CC Collector efficiency Oscillator Power Output PO Test Conditions VCE = 10 Volts, IC = 4 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 6 Volts, IC = 1 mA, f = 60 MHz, Rg = 2.5 M VCB = 12 Volts, IC = 6 mA, f = 200 MHz VCB = 10 Volts, IE = -4 mA, f = 79.8 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz VCB = 15 Volts, IC = 8 mA, f = 500 MHz Min Typ 6 18 1.7 pF 6 dB dB 15 25 ps mW 30 25 % Specifications Subject to Change Copyright(c) 2010 Rev. G SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2