Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions * Large current capacity (IC=2A). * High breakdown voltage (VCEO400V). unit:mm 2064A [2SA1786/2SC4646] 2.5 1.45 1.0 1.0 1.0 4.5 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP ( ) : 2SA1786 Specifications 2.54 2.54 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)400 Collector-to-Emitter Voltage VCEO (-)400 V Emitter-to-Base Voltage VEBO IC (-)5 V (-)2 A ICP PC (-)4 A 1 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Collector Current Colletor Current (Pulse) Collector Dissipation V Electrical Characteristics at Ta = 25C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO Emitter Cutoff Current Ratings min typ VCB=(-)300V, IE=0 VEB=(-)4V, IC=0 Unit (-)1.0 A (-)1.0 A DC Current Gain hFE VCE=(-)10V, IC=(-)100mA Gain-Bandwidth Product fT C ob VCE=(-)10V, IC=(-)100mA (40)60 VCB=(-)30V, f=1MHz (25)15 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(-)500mA, IB=(-)50mA (-)1.0 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(-)500mA, IB=(-)50mA (-)1.0 V Output Capacitance 40* max * : The 2SA1786/2SC4646 are classified by 100mA hFE as follows : 200* MHz pF Continued on next page. Rank C D E hFE 40 to 80 60 to 120 100 to 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 93003TN (KT)/83198HA (KT)/12894TH AX-8287/4231MH/5180TA (KOTO) X-6912 No.3512-1/5 2SA1786/2SC4646 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton Storage Time min typ Unit V (-)400 V IE=(-)10A, IC=0 (-)5 V (0.12) s 0.085 s (3.0) s 4.0 s (0.3) s 0.6 s See specified Test Circuit. toff max (-)400 See specified Test Circuit. tstg Turn-OFF Time Ratings Conditions See specified Test Circuit. Switching Time Test Circuit IB1 IB2 OUTPUT INPUT RB VR PW=20s D.C.1% RL + + 50 100F 470F VBE=--5V VCC=150V 10IB1= --10IB2= IC=500mA RL=300,RB=20, at IC=500mA (For PNP, the polarity is reversed.) IC -- VBE --2.0 2SC4646 VCE=10V 1.6 25 --0.4 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE - V --1.4 DC Current Gain, hFE DC Current Gain, hFE 100 25C --25C 3 2 10 3 5 7 --100 2 Collector Current, IC - 3 5 7--1000 2 3 ITR04685 mA --25 2SC4646 VCE=10V 2 10 5 2 1.4 ITR04684 3 7 5 7 --10 1.2 25C 5 5 3 1.0 --25C 7 7 3 0.8 Ta=75C Ta=75C 5 0.6 hFE -- IC 2 100 7 C 5C Ta= 7 0.4 3 2SA1786 VCE=--10V 2 0.2 Base-to-Emitter Voltage, VBE - V ITR04683 hFE -- IC 3 0.4 0 0 0 0 0.8 C C --0.8 1.2 25 Collector Current, IC - A Ta= 7 --1.2 --25C 5C --1.6 Collector Current, IC - A IC -- VBE 2.0 2SA1786 VCE=--10V 3 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 3 ITR04686 Collector Current, IC - mA No.3512-2/5 2SA1786/2SC4646 f T -- IC 2SA1786 VCE=--10V 2 100 7 5 3 2 10 7 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC - mA 7 5 3 2 10 5 7 --1000 ITR04687 3 7 2 10 3 5 7 100 2 3 2SC4646 f=1MHz Output Capacitance, Cob -- pF 2 100 7 5 3 2 10 5 7 1000 ITR04688 Cob -- VCB 3 2SA1786 f=1MHz 2 5 Collector Current, IC - mA Cob -- VCB 3 Output Capacitance, Cob -- pF 100 5 3 100 7 5 3 2 10 7 5 7 5 3 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 V ITR04689 Collector-to-Base Voltage, VCB -- 7 --1.0 7 5 3 2 --0.1 Ta=75C 25C --25C 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC - mA 5 7 --1000 ITR04691 Base-to-Emitter Saturation Voltage, VBE (sat) -V 2 --1.0 Ta=--25C 25C 75C 7 100 2 ITR04690 7 5 3 2 25C Ta=75C 0.1 --25C 5 7 2 10 3 5 7 100 2 3 5 7 1000 ITR04692 VBE(sat) -- IC 2SC4646 IC / IB=10 7 3 5 5 1.0 10 5 7 3 Collector Current, IC - mA 2SA1786 IC / IB=10 7 2 10 2SC4646 IC / IB=10 5 3 VBE(sat) -- IC --10 7 VCE(sat) -- IC 7 3 3 5 2 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2 5 3 3 2SA1786 IC / IB=10 7 2 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2SC4646 VCE=10V 2 7 5 Base-to-Emitter Saturation Voltage, VBE (sat) -V f T -- IC 3 Gain-Bandwidth Product, fT - MHz Gain-Bandwidth Product, fT - MHz 3 5 3 2 1.0 Ta=--25C 7 25C 75C 5 3 3 3 5 7 --0.1 2 3 5 7 --100 2 3 Collector Current, IC - mA 5 7 --1000 2 ITR04695 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC - mA 5 7 1000 2 ITR04694 No.3512-3/5 2SA1786/2SC4646 SW Time -- IC 10 7 5 Switching Time, SW Time -- s 3 2 1.0 7 5 tr to n 0.1 7 5 VCC=150V 10IB1=--10IB2=IC 3 7 --10 2 3 5 2 3 5 7--1000 3 2 2 1.0 7 5 3 2 DC 3 2 op er --0.1 ati on 5 3 2 7 5 3 2 Collector-to-Emitter 2 3 5 --100 2 3 5 --1000 Voltage, VCE - V ITR04697 PC -- Ta 1.2 7 100 2 3 5 7 1000 2 3 ITR04696 ASO 2SC4646 Single pulse Tc=25C ICP=4A IC=2A DC 3 2 op er 0.1 ati on 5 3 2 5 --10 5 5 5 5 3 1.0 0.01 2 3 2 10 Collector Current, IC - mA --0.01 --1.0 VCC=--150V 10IB1=--10IB2=IC s 1m ms 10 ms 0 10 s 1m s 10m 0ms 10 5 5 to n 0.1 7 5 10 --1.0 2 3 tf ITR04693 2SA1786 Single pulse Tc=25C ICP=-4A IC=-2A 3 2 --0.1 ts tg 3 3 2 ASO --10 5 10 7 5 3 7 --100 Collector Current, IC - mA Collector Current, IC - A 2SC4646 tstg 3 2 SW Time -- IC 2 2SA1786 Collector Current, IC - A Switching Time, SW Time -- s 2 3 2 0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2 3 Collector-to-Emitter Voltage, VCE - V 5 1000 ITR04698 2SA1786 / 2SC4646 Collector Dissipation, PC - W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR04699 No.3512-4/5 2SA1786/2SC4646 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.3512-5/5