MJE15031 - ON Semiconductor

October, 2011 − Rev. 5

1Publication Order Number:

MJE15028/D

MJE15028, MJE15030 (NPN)

MJE15029, MJE15031 (PNP)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use as high−frequency drivers in

audio amplifiers.

Features

•DC Current Gain Specified to 4.0 A

hFE = 40 (Min) @ IC = 3.0 Adc

= 20 (Min) @ IC = 4.0 Adc

•Collector−Emitter Sustaining Voltage −

VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029

= 150 Vdc (Min); MJE15030, MJE15031

•High Current Gain − Bandwidth Product

fT = 30 MHz (Min) @ IC = 500 mAdc

•TO−220AB Compact Package

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE15028, MJE15029

MJE15030, MJE15031

VCEO 120

150

Vdc

Collector−Base Voltage

MJE15028, MJE15029

MJE15030, MJE15031

VCB 120

150

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak

IC

ICM

8.0

16

Adc

Base Current IB2.0 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25°C

PD50

0.40

W

W/_C

Total Device Dissipation @ TC = 25_C

Derate above 25°C

PD2.0

0.016

W

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to

+150

_C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.5 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

8 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

120−150 VOLTS, 50 WATTS

TO−220AB

CASE 221A−09

STYLE 11

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MARKING DIAGRAM

23

MJE150xx = Device Code

x = 28, 29, 30, or 31

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MJE150xxG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 10 mAdc, IB = 0) MJE15028, MJE15029

MJE15030, MJE15031

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

120

150

ÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 120 Vdc, IB = 0) MJE15028, MJE15029

(VCE = 150 Vdc, IB = 0) MJE15030, MJE15031

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

0.1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0) MJE15028, MJE15029

(VCB = 150 Vdc, IE = 0) MJE15030, MJE15031

ÎÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎ

10

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

10

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.1 Adc, VCE = 2.0 Vdc)

(IC = 2.0 Adc, VCE = 2.0 Vdc)

(IC = 3.0 Adc, VCE = 2.0 Vdc)

(IC = 4.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

40

20

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain Linearity

(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)

(NPN to PNP)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎÎ

Typ

2

3

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

0.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

1.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎÎ

fT

ÎÎÎÎ

30

ÎÎÎ

−

ÎÎÎÎ

MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT = ⎪hfe⎪• ftest.

0

Figure 1. Power Derating

T, TEMPERATURE (°C)

0

40 60 100 120 160

40

TC

20

60

PD, POWER DISSIPATION (WATTS)

0

2.0

TA

1.0

3.0

80 140

TC

TA

20

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

http://onsemi.com

3

t, TIME (ms)

0.01

0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

ZqJC(t) = r(t) RqJC

RqJC = 1.56°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 2. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.02 100 200

0.1

0.02

0.01

20

2.0

Figure 3. Forward Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

16

10

0.02

20 120

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN

LIMITED @ TC = 25°C

IC, COLLECTOR CURRENT (AMP)

dc

100 ms

5.0 10 150

1.0

50

0.1

5ms

MJE15028

MJE15029

MJE15030

MJE15031

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 2.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

8.0

0

Figure 4. Reverse−Bias Switching

Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

0120 140

IC, COLLECTOR CURRENT (AMP)

5 V

VBE(off) = 9 V

100 110 150

3.0

130

2.0

1.0

VR, REVERSE VOLTAGE (VOLTS)

10 150

500

1000

50

Figure 5. Capacitances

200

10030107.05.01.5

C, CAPACITANCE (pF)

3.0

20

50

IC/IB = 10

TC = 25°C

3 V

1.5 V

Cib (NPN)

Cob (PNP)

100

30

0 V

Cib (PNP)

Cob (NPN)

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

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4

Figure 6. Small−Signal Current Gain

f, FREQUENCY (MHz)

1.0 3.0 10

20

100

hfe, SMALL SIGNAL CURRENT GAIN

2.0 7.0

5.0

0.5 5.0

50

30

10

0.7

NPN

Figure 7. Current Gain−Bandwidth Product

IC, COLLECTOR CURRENT (AMP)

0.5 2.0

60

100

fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

1.0 10

20

0.1 5.0

90

50

0.2

PNP

(NPN)

(PNP)

VCE = 10 V

IC = 0.5 A

TC = 25°C

0

10

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

200

1K

100.1

150

100

70

30

0.2

10

1.0 5.02.00.5

TJ = 25°C

TJ = 150°C

0.1

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

1.0

0.6

0.2

TJ = 25°C

V, VOLTAGE (VOLTS)

NPN — MJE15028 MJE15030 PNP — MJE15029 MJE15031

500

1K

200

100

50

20

10

hFE, DC CURRENT GAIN

VCE = 2.0 V

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

VCE(sat) = IC/IB = 20

VBE(on) @ VCE = 2.0 V

1.8

1.4

1.0

0.8

0.4

0

IC/IB = 10

NPN PNP

100.1 0.2 1.0 5.02.00.5

100.2 1.0 5.02.00.5 100.1 0.2 1.0 5.02.00.5

50

20

500

TJ = 150°C

TJ = -55°C

VCE = 2 V

TJ = -55°C

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) = IC/IB = 20

IC/IB = 10

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

http://onsemi.com

5

IC, COLLECTOR CURRENT (AMP)

VCC = 80 V

IC/IB = 10

TJ = 25°C

td (NPN, PNP)

tr (PNP)

Figure 10. Turn−On Times

10

IC, COLLECTOR CURRENT (AMP)

5.0

3.0

2.0

1.0

0.5

Figure 11. Turn−Off Times

0.2

0.1

VCC = 80 V

IC/IB = 10, IB1 = IB2

ts (NPN) TJ = 25°C

0.1

1.0

0.5

0.2

0.03

0.01

0.1

0.05

0.02

t, TIME (s)μ

100.2 1.0 5.02.00.5 100.1 0.2 0.3 5.02.00.5

tr (NPN)

tf (NPN)

tf (PNP)

ts (PNP)

ORDERING INFORMATION

Device Package Shipping

MJE15028 TO−220 50 Units / Rail

MJE15028G TO−220

(Pb−Free)

50 Units / Rail

MJE15029 TO−220 50 Units / Rail

MJE15029G TO−220

(Pb−Free)

50 Units / Rail

MJE15030 TO−220 50 Units / Rail

MJE15030G TO−220

(Pb−Free)

50 Units / Rail

MJE15031 TO−220 50 Units / Rail

MJE15031G TO−220

(Pb−Free)

50 Units / Rail

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)

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6

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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Phone: 81−3−5817−1050

MJE15028/D

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