MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. Features 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS, 50 WATTS * DC Current Gain Specified to 4.0 A * * * * http://onsemi.com hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO-220AB Compact Package Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJE15028, MJE15029 MJE15030, MJE15031 VCEO Collector-Base Voltage MJE15028, MJE15029 MJE15030, MJE15031 VCB Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC ICM 8.0 16 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 50 0.40 W W/_C Total Device Dissipation @ TC = 25_C Derate above 25C PD 2.0 0.016 W W/_C TJ, Tstg -65 to +150 _C - Continuous - Peak Operating and Storage Junction Temperature Range Value TO-220AB CASE 221A-09 STYLE 1 Unit Vdc 120 150 1 2 3 Vdc 120 150 MARKING DIAGRAM MJE150xxG AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristics RqJC 2.5 _C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MJE150xx = Device Code x = 28, 29, 30, or 31 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 5 1 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MJE15028/D MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIII IIIIIII IIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 120 150 - - - - 0.1 0.1 - - 10 10 - 10 40 40 40 20 - - - - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCE = 120 Vdc, IB = 0) (VCE = 150 Vdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) MJE15028, MJE15029 MJE15030, MJE15031 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN to PNP) hFE - Typ 2 3 Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) - 0.5 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.0 Vdc fT 30 - MHz DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) PD, POWER DISSIPATION (WATTS) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe* ftest. TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 80 60 100 120 T, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 140 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.07 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMP) Figure 2. Thermal Response 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 5ms dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25C 0.1 0.02 2.0 MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 1000 8.0 Cib (NPN) Cib (PNP) C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 500 5.0 IC/IB = 10 TC = 25C 3.0 VBE(off) = 9 V 2.0 0 0 100 Cob (PNP) 50 30 5V 3V 1.0 200 Cob (NPN) 20 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 1.5 3.0 5.0 7.0 10 30 50 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Figure 4. Reverse-Bias Switching Safe Operating Area http://onsemi.com 3 100 150 fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) hfe , SMALL SIGNAL CURRENT GAIN 100 50 30 VCE = 10 V IC = 0.5 A TC = 25C 20 PNP NPN 10 5.0 0.5 2.0 3.0 f, FREQUENCY (MHz) 1.0 0.7 5.0 7.0 10 100 90 (PNP) (NPN) 60 50 20 10 0 0.1 0.2 NPN -- MJE15028 MJE15030 1K 500 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 2 V VCE = 2.0 V 500 TJ = 150C TJ = 25C TJ = -55C 30 20 10 0.1 10 PNP -- MJE15029 MJE15031 1K 100 70 50 5.0 Figure 7. Current Gain-Bandwidth Product Figure 6. Small-Signal Current Gain 200 150 1.0 0.5 2.0 IC, COLLECTOR CURRENT (AMP) TJ = 150C 200 TJ = 25C 100 TJ = -55C 50 20 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 Figure 8. DC Current Gain NPN PNP TJ = 25C 1.8 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 1.4 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0.2 VCE(sat) = IC/IB = 20 IC/IB = 10 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0 0.1 10 Figure 9. "On" Voltage http://onsemi.com 4 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC/IB = 10 5.0 10 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 10 1.0 VCC = 80 V IC/IB = 10 TJ = 25C 0.5 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C 5.0 t, TIME (s) t, TIME (s) 3.0 td (NPN, PNP) tr (PNP) 0.2 0.1 0.05 ts (PNP) 1.0 0.5 tf (PNP) tr (NPN) 0.03 0.02 0.01 0.1 2.0 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0.1 0.1 10 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Turn-Off Times Figure 10. Turn-On Times ORDERING INFORMATION Device MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G Package Shipping TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail http://onsemi.com 5 5.0 10 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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