Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 20V
▼ Capable of 2.5V Gate Drive RDS(ON) 50mΩ
▼ Single Drive Requirement ID12.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Total Power Dissipation 12.5
-55 to 150
201009303
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.1
Storage Temperature Range
Total Power Dissipation3
Continuous Drain Current, VGS @ 4.5V 8
Pulsed Drain Current160
Gate-Source Voltage +16
Continuous Drain Current, VGS @ 4.5V 12.5
2
AP9T15GH/J
Parameter Rating
RoHS-compliant Product
Drain-Source Voltage 20
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
GDSTO-252(H)
GDSTO-251(J)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=6A - - 50 mΩ
VGS=2.5V, ID=5.2A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.5 V
gfs Forward Transconductance VDS=5V, ID=10A - 10 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=10A - 5 8 nC
Qgs Gate-Source Charge VDS=16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC
td(on) Turn-on Delay Time2VDS=10V - 8 - ns
trRise Time ID=10A - 55 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 10 - ns
tfFall Time RD=1Ω-3-
ns
Ciss Input Capacitance VGS=0V - 360 580 pF
Coss Output Capacitance VDS=20V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
RgGate Resistance f=1.0MHz - 1.67 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=10A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 17 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP9T15GH/J
AP9T15GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=6A
VG=4.5V
0
10
20
30
40
50
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
5.0V
4.5V
3.5V
2.5V
VG=1.5V
TC=25oC
0
10
20
30
40
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 5.0V
4.5V
3.5V
2.5V
VG=1.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
33
35
37
39
41
43
45
0246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=5.2A
TC=25oC
AP9T15GH/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
12
14
024681012
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=10A
VDS =10V
VDS =12V
VDS =16V
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on)trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
Operation in this
area limited by
RDS(ON)
