Silicon Transistors i) Ga GI D38H1-9 The General Electric 38H series are high current, high voltage NPN Silicon Planar Transistors ideally suited for switching and amplifier applications requiring both high voltage and good high current gain and saturation characteristics. These are compliments to the D39J series. absolute maximum ratings: (Ts = 25C unless otherwise specified) D38H D38H 0D38H Voltages 1,2,3 45,6 7,8,9 |LEMITTER Collector to Emitter Vero 60 80 100 Volts FOO LECTOR Collector to Base Vcso 60 80 100. Volts Emitter to Base VERO 60 5 Volts 17 Orel Current 407] 482{016,0/9| 3 Collector Ic _ 500 mA AeOl 3s ami Collector (Peak Pulsed Ic 1000 mA (0[2.67 01.095] 105 10us < 2% duty cycle) i : Dissipation | / go] = {800} 18 Total Power Ta < 25C Py _ 500 Watts Total Power Tc <25C Py - 100 Watts Derate Factor Ta > 25C 40 mw/fc NOTES: Derate Factor Te > 25C - 80 mWwfC 3 CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE Temperature 3(THREE TEADS) be APPLIES BETWEEN Ly AND Lo. Operating Tj 65to+150 C from THE SEATING PLANE, DIAMETER 1S UN-_ Storage Te SLO HSO C CEMTTOLLED INL Ang BEVONO 2 TOME SOO Lead (1/16" + 1/32 from Ty +260 C case for 10 sec.) electrical characteristics: (T, = 25C unless otherwise specified) Static Characteristics SYMBOL MIN. MAX. UNITS Collector-Emitter Breakdown Voltage (Ic = 1mA, Ip = 0) D38H1,2,3 V(BR)CEO 60 _ Volts D38H4,5,6 V(BR)CEO 80 _ Volts D38H7,8,9 V(BR)CEO 100 _ Volts Collector-Base Breakdown Voltage (Ic = 10 yA, Iz = 0) D38HI 32,3 ViBR)CcBO 60 _ Volts D38H4,5,6 ViBR)cBO 80 _ Volts D38H7,8,9 V(pr)CBO 100 Volts Emitter-Base Breakdown Voltage (Ip = 10 uA, Ic = 0) V(BR)EBO 5 Volts Collector Cutoff Current (Vcr = 50V, Vge = 0) IoBo - - nA Collector Cutoff Current (Vcp = SOV, Ig = 0) IcBo _ 25 nA Emitter-Base Reverse Current (Vp = 3V, Ic = 0) TBO - 25 nA Forward Current Transfer Ratio* (Vcr = 1V, Ic = 10mA) D38H1,4,7 here 60 150 D38H2,5,8 hrr 100 300 D38H3,6,9 hrge 200 500 1082Static Characteristics (continued) Forward Current Transfer Ratio* (continued) (Vcr = 1V, Ic = 100 mA) D38H1,4,7 D38H2,5,8 D38H3,6,9 (Vcr = 5V, Ic = 500mA) D38H1,4,7 D38H2,5,8 D38H3,6,9 Collector-Emitter Saturation Voltage* (Ice = 10 mA, Ip = 1 mA) (Ic = 100 mA, Ig = 10mA) (Ic = 500 mA, Ip = 50 mA) Base-Emitter Saturation Voltage* (Ic = 100 mA, Ip = 10mA) (Ic = 500 mA, Ip = 50 mA) Dynamic Characteristics Collector-Base Capacitance (Voz = 10V, Ip = 0, f = 1 MHz) Emitter-Base Capacitance (Veg = -5V, Ic = 0, f = 1 MHz) Gain Bandwidth Product (Vor = 10V, Ip = 30mA, f = 50 MHz) *Pulse width < 300usec., duty cycle < 2%. - FORWARD CURRENT TRANSFER RATIO NORMALIZED TO (Oma VALUE bee Al Jd | FORWARD CURRENT TRANSFER RATIO NORMALIZED 4JUD38H Hv wo Ig ~COLLECTOR CURRENT-mA TO 10mA VALUE VS COLLECTOR CURRENT 1000 SYMBOL hre hrg hrr hrr hrg hre VcE(sat) VcK(sat) VcE(sat) VBE (sat) VeE(sat) VoESaT)- COLLECTOR EMITTER SATURATION VOLTAGE -VOLTS J 0 Ie~ COLLECTOR CURRENT-mA 1083 z $ G = 4JD38H & ci & 4 Lo CoA iy r | vs 4 = LneoeaeTT Lr 4 Vj revy | A , ace vee (Sat) 99 [ted Co CeTD ag Lh per Lent Ll LA ew ey Lee or A ag 25c Leet T | _o oe 6 VBE (SAT) eget) ! P| of ba bot > banat n | hoor ue asa aH Vee 256 aon g Le Lar Lape o 4 > ee wo Lee TT Vee tS cr e a Lemme o 2 w @ % \ 100 1000 MIN. 55 90 150 30 45 75 80 D38H TYPICAL ig 10 Xig .050 125 -250 83 25 12 100 I-COLLECTOR CURRENT -mA COLLECTOR EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT UNITS Volts Volts Volts Volts Volts pF pF MHz BASE EMITTER VOLTAGE (Vc_ = 1V) AND BASE EMITTER SATURATION VOLTAGE (Ic = 10x 1B) VS COLLECTOR CURRENT