O1 Def) 3a7sos, oo172s4 1 , E 3875081 GE SOLID STATE OtE 17259 0 1-3327 Darlington Power Transistors = o File Number 1152 2N6576, 2N6577, 2N6578 15-Ampere N-P-N Darlington .Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4A TERMINAL DESIGNATIONS Features: c & Operates from [C without predriver e (FLANGED Low leakage at high temperature Applications: Power switching Hammer drivers Series and shunt regulators = Audio amplifiers 8 O2Ck- 27516 JEDEC TO-204AA The 2N6576, 2N6577, and 2N6578 are monolithic n-p-n silicon Darlington transistors designed for low- and medium-frequency power applications. The construction of these devices provides good forward-bias second-break- down capability; their high gain makes it possible for them to be driven directly from Integrated circuits. All types utilize the steel JEDEC TO-204AA/ TO-3 her- metic package, 92c5-20597 Fig. 1 Schematic diagram for all types. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6576 2N6877 2N6578 * VopO. 60 90 120 v * Vogolsush 2 ee 60 90 120 Vv * Veno- . . 7 v oe ee 1S } _ A lom vos 0 A tIge ee 0.26 A * Py . Te <25C 120 w To > 25C See Fig, 2 ' * Teg Ty 65 to 200 * TL At distances > 1/32 in.(0.8 mm plane for10smax.. . . ] 235 % * In accordance with JEDEC registration data, ~ 261 A-12wae OL DEM 3875081 0017260 8 i on. 3675081 G E SOLID STATE OE 172600 TSB 29 Darlington Power Transistors 2N6576, 2N6577, 2N6578 ELECTRICAL CHARACTERISTICS, At Case Temperature (T= 25C Unless Otherwise Specified TEST CONDITIONS LIMITS U CHARAC- N . TERISTIC VOLTAGE CURRENT \ SYMBOL Vde Adc 2N6576 2N6577 2N6578 + Vce|Ves|YBe| 'c Ig | MIN.[MAX. | MIN,|MAX. | MIN.IMAX. | S *licgo 608 - | 06 -|- -j- goa -~ | - - |05 - |- 1208 - | - -|- | 05 *l Ice 60 . o |-|4 _ |e a 90 0 -~{[- - 1 a 120 0 - ~ ~ - - 1 mA f 1 ICER 60 - | 8 - [7 -[- PO Rpe = 10K| 90 ~|f- ~ 5 -.|- *| To=150C | 120 _|- on - 5 IcEX 60 -1.5 _ 5 - _ _ ~ . . Tg=175C | 90 -1.5 -~|- - 5 ~f[- : 120 -15 -~|- on - 5 i *| lego 7 0 ~ | 75 ~ |75 - | 7.5 [mA *| VeEo (sus) 0.25 | 0 60 | 90 | - 120} - Vv *lhee 3 0.45 200| 200 } 200 | - 3 4b 2000] 20000 | 2000]20000 | 2000]20000 3 105 500] 5000] 500} S000 | 500) 5000 4 15b 100] 100 } - 100) - 10] 0.15 - | 35 - |3.5 - | 35 * , : Veelsat) 150.156 tas | - las | - fas | Y 1ob | O01 | - |] 28 - 128 ~ | 28 * Vcelsat) 15> jos | - | 4 -|4 ~|4 V VE 15 - | 45 ~ 145 | 45 * hfe f=1 MHz 3 3 4 | 40 4 | 40 4 | 40 * \tge 10 01 | [0.15 ~ 1015 | ~ 10.15 *|te 10 o1 | - | 1 - |1 -,| 1 ys le 10 o.id| - | 2 - | 2 ], 2 * le 10 oid] - | 7 -|7 - |7 IS/b 115, 20 6 | - 6 }- 6 |- A non rep, Rac {1.46 11.46 - |146 jocw {nm accordance with JEDEC registration data. Vag = 30 V, th = 300 us, duty cycle = 2%, Vp value, 41g, =lB2- b Pulsed: Pulse duration = 300 ys, duty factor = 1.8%. 262 0802 A-13elie - aw OL de ffsa7soa1 oowen1 oo 3875061 GE SOLID STATE a O1E 17261 D %-83729 Darlington Power Transistors | 2N6576, 2N6577, 2N6578 HOTE- CURRENT DERATING VOLTAGE APPLIES ONLY TO LIMITED PORTION AND THE RATIO (hp) g 23 53 Yo gy fe Sy uo ve PERCENTAGE Of MAXIMUM DrSSIPATION AT \oo | to COLLECTOR CURRENT (Ic}=A dace gariee7 CASE TEMPERATURE (Teh*C 92CS- 20693 Fig. 2 Derating curves for all types. Fig, 3 ~ Typical de-beta characteristics for all types. FOR SINGLE NONREPETITIVE PULSE i 4 yo e re z ] = > | & S ze o w _ 2 S o CASE TEMPERATURE (To }= 25C (CURVES MUST 8E DERATED LINEARLY WITH INCREASE IN TEMPERATURE) Vogg (MAX 1= 60 VCEO (MAX.)= SOV { YVCEQ (MAX )#120V[ COLLECTOR-TO-EMITTER VOLTAGE (Vop)V 92CM ~ 31128 Fig, 4 Maximum operating areas for all types. 263 c8o3 A-14 .O14 Def 3475081 OOu?2be 1 T 3875081 GE SOLID STATE Darlington Power Transistors O1E 17262 5 71-3372 2N6576, 2N6577, 2N6578 COLLECTOR CURRENT tI) a AE. a COLLECTOR CURRENT $1)- $205 -1992081 Fig. Typical saturated switching time characteristics for all types. Fig. COLLECTOR CURRENT (IeiA < T. o a & z & 5 3 3 5 3 8 COLLECTOR-TO-EMITTER VOLTAGE (VcgI Sats -18925 Fig. 7 Typical output characteristics for ail typs. 8 CUARENT 1a VOLTAGE (Vogl? S CASE TEMPERATURE (Tel?25*C SMALL-SIGNAL CURRENT GAIN (hie) ao a J HOS: 599 + FREQUENCY Lt) we Fig. 9 Typical small-signal gain for all types. 264 _ ; 0804 B-01 a. COLLECTOR -TO-EMITTER SATURATION VOLYAGE COLLECTOR-TO-EMITTER VOLTAGE (Voel* Sio% > BASE -TO-EWITTER VOLTAGE (Vag) V percacivsze nt 6 Typical transfer characteristics for all types. 150C {sol v 9208-70888 Fig. 8 Typical saturation characteristics for all types. COLLECTOR= VOLTAGE (vcgls 3 BASE -TO-EMITTER VOLTAGE (VaglV 925-1992 5m) Fig. 10 Typical input characteristics for all types.ence = te, Te DE 3475081 oozes 3 3875081 Gt ID STATE oie 17263 5 T8327 3875081 GE SOL Darlington Power Transistors = 2N6576, 2N6577, 2N6578 tL 09 INPUT . SHAONEries Pulse |= Tay GENERATOR MODEL Ne. PG+3t, ON = EQUIVALENT Ly (TEXTRONIX KODEL Acs Wo, S438 2200 Of ESUIVALENT) Veer OY + QuTPuT To OSCILLOSCOPE i | o PULSE DURATION Ry *200 fe 20 ns POSITIVE. VOLTAGE 20 n 4 NEGATIVE VOLTAGE AEP. RATE s 200 He - * Ip, ANO Lag ARE MEASURED WITH TEKTRONIX CURRENT PROBE PEOIS ANO TYPE 134 AMPLIFIER, OR EQUIVALENT eres- sue Fig. 11 Circuit used to measure saturated-switching turn-on | 7% times, TIME - : s2cs-iseteal QUTPUT WAVE FORM 265