IN1IN2
D1D2
S1S2
V– V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG201B
Dual-In-Line, SOIC and TSSOP
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-1
Improved Quad CMOS Analog Switches
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 45
Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 120 ns
Low Glitching—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum T ransients
Reduced Power Consumption
Superior to DG201A/202
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The DG201B/202B analog switches are highly improved
versions of the industry-standard DG201A/202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
switching transients. The DG201B and DG202B can handle
up to 22-V input signals, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (See Truth Table.)
Logic DG201B DG202B
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-2 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
ORDERING INFORMATION
Temp Range Package Part Number
40 85 C
16
-
Pin Plastic DIP
DG201BDJ
40 85 C
16
-
Pin
Plastic
DIP
DG202BDJ
40 85 C
16
-
Pin CerDIP
DG201BDK
–
40 to 85
_
C
16
-
Pin
CerDIP
DG202BDK
–
40
to
85_C
16
-
Pin Narrow SOIC
DG201BDY
16
-
Pin
Narrow
SOIC
DG202BDY
16
-
Pin TSSOP
DG201BDQ
16
-
Pin
TSSOP
DG202BDQ
55 125 C
16 Pi C DIP
DG201BAK
–
55 to 125
_
C
16
-
Pin CerDIP
DG201BAK/883
–
55
to
125_C
16
-
Pin
CerDIP
DG202BAK
DG202BAK/883
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD(V–) –2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, Any Terminal 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) 100 mA. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (AK, DK Suffix) –65 to 150_C. . . . . . . . . . . . . .
(DJ, DY, DQ Suffix) –65 to 125_C. . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC and TSSOPd640 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIPe900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
DX
SX
V+
INX
V–
Level
Shift/
GND
V+
V–
5 V
Reg
Drive
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-3
Test Conditions
Unless Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source On-Resistance rDS(on) VD = 10 V, IS = 1 mA Room
Full 45
W
rDS(on) Match DrDS(on)
DS
Room 2
Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room
Full 0.01
–0.5
–5 0.5
5
A
Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room
Full 0.01
0.5
5nA
Drain On Leakage Current ID(on) VS = VD = 14 V Room
Full 0.02
0.5
10
Digital Control
Input Voltage High VINH Full
V
Input V oltage Low VINL Full
V
Input Current IINH or IINL VINH or VINL Full – – mA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Turn-On Time tON VS = 2 V
S S it hi Ti T t Ci it
Room
Full 120
ns
T urn-Off Time tOFF
S
See Switching T ime Test Circuit Room
Full 65
ns
Charge Injection Q CL = 1000 pF, Vg = 0 V
Rg = 0 WRoom 1 pC
Source-Of f Capacitance CS(off)
VS
=
0 V, f
=
1 MHz
Room 5
F
Drain-Of f Capacitance CD(off)
V
S =
0
V
,
f
=
1
MHz
Room 5 pF
Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR
CL
=
15 pF, RL
=
50 W
Room 90
dB
Channel-to-Channel
Crosstalk XTALK
C
L =
15
pF
,
R
L =
50
W
VS = 1 VRMS, f = 100 kHz Room 95 dB
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-4 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
Test Conditions
Unless Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 12 V, V– = 0 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source
On-Resistance rDS(on) VD = 3 V, 8 V, IS = 1 mA Room
Full 90
W
Dynamic Characteristics
Turn-On Time tON VS = 8 V
S S it hi Ti T t Ci it
Room 120
ns
T urn-Off Time tOFF
S
See Switching T ime Test Circuit Room 60
ns
Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 WRoom 4 pC
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. T ypical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600
4-5
_
–20 –16 –12 –8 –4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
–15 –10 –5 0 5 10 15
0246810121416
0
25
50
75
100
125
150
175
200
225
0
0.5
1
1.5
2
2.5
rDS(on) ()
5 V
rDS(on) vs. VD and Power Supply Voltages
VD – Drain Voltage (V)
10 V
15 V
20 V
rDS(on) ()
r
DS(on) vs. VD and Temperature
VD – Drain Voltage (V)
125_C
85_C
25_C
–55_C
V+ = 15 V
V– = –15 V
rDS(on) ()
r
DS(on) vs. VD and Single Power Supply Voltages
VD – Drain Voltage (V)
VTH ()V
Input Switching Threshold vs. Supply Voltage
4 6 8 101214161820
V+ = 5 V
7 V
10 V 12 V 15 V
30
20
10
60
70
80
90
100
250
IS(off), ID(off)
ID(on)
–20 –15 –10 –5 0 5 10 15 20
80
60
40
20
0
–20
–40
–60
–80
Temperature (_C)
Leakage Currents vs. Analog Voltage
IS,ID– Current (pA)
–55 25 455–15 65
1 nA
100 pA
10 pA
–35
1 pA 85 105 125
V+ = 15 V
V– = –15 V
VS, VD = 14 V
IS(off), ID(off)
Temperature (_C)
Leakage Currents vs. Temperature
– CurrentI , I
SD
V+ Positive Supply (V)
V+ = 22 V
V– = –22 V
TA = 25_C
DG201B/202B
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4-6 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
_
02 4 6 8 101214161820
100
200
300
400
500
V– = 0 V
ton
toff
Switching T ime (ns)
Switching Time vs. Single Supply Voltage
0
100
200
300
400
ton
toff
Switching T ime (ns)
Switching Time vs. Power Supply Voltage
04812 16 20
–15 –10 –5 0 5 10 15
30
20
10
0
–10
–20
–30
V+ = 15 V
V– = –15 V V+ = 12 V
V– = 0 V
Q – Charge (pC)
QS, QD – Charge Injection vs. Analog Voltage
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
110
120 Off Isolation vs. Frequency
OIRR (dB)
V+ = 15 V
V– = –15 V
RL = 50
1 k 10 k 100 k 1 M
4
3
2
1
0
I+ – Supply Current (mA)
Supply Current vs. Switching Frequency
V+ – Positive Supply (V) V+, V– Positive and Negative Supplies (V)
VANALOG – Analog V oltage (V)
f – Frequency (Hz)
f – Frequency (Hz)
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-7
FIGURE 2. Switching T ime
FIGURE 3. Off Isolation
50%
0 V
3 V
tOFF
tON
VO
tr <20 ns
tf <20 ns
Logic
Input
Switch
Output
90%
CL
35 pF
RL
1 kW
VO = VSRL + rDS(on)
RL
VS = +2 V VO
V–
V+
IN
SD
3 V
–15 V
GND
+15 V
S
IN RL
D
Rg = 50 W
VSVO
0V, 2.4 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
IN1
0V, 2.4 V
VO
+15 V
–15 V
GND
RL
V+
V–
NC
XTALK Isolation = 20 log
C
VS
C
VO
0V, 2.4 V
50 W
VSS1
IN2
S2
Rg = 50 W
D1
D2
C = RF bypass
FIGURE 4. Channel-to-Channel Crosstalk
FIGURE 5. Charge Injection
CL
1000 pF
Vg3 V
D
V+
V–
Rg
–15 V
GND
IN
SVO
+15 V
VO
DVO
INXON ONOFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
DG201B/202B
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-8 Document Number: 70037
S-52433—Rev. G, 06-Sep-99
FIGURE 6. Sample-and-Hold
LM101A
+15 V
–15 V
30 pF
+15 V
–15 V
V+
V– DG201B
50 pF
1000 pF
J202
J500
J507
+15 V
2N4400
–15 V
VIN VOUT
1 kW
200 W
5 MW
5.1 MW
Aquisition T ime = 25 ms
Aperature T ime = 1 ms
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
–
+
fC1 fC2 fC3
TTL
Control
150 pF
1500 pF
+15 V
DG201B GND
30 pF
LM101A
+15 V
–15 V
1 10 100 1 k 10 k 100 k 1 M
–40
0
160
120
80
Voltage Gain – dB
fC4
Select
fC3
Select
fC2
Select
fC1
Select
R1 = 10 kW
R2 = 10 kW
R3 = 1 MW
VOUT
V1
V–
C4
C3
C2
C1
fL1
fC4
fL2 fL3 fL4
AL (V oltage Gain Below Break Frequency) = = 100 (40 dB)
R3
R1
fC (Break Frequency) = 1
2pR3CX1
2pR1CX
fL (Unity Gain Frequency) =
Max Attenuation = rDS(on)
10 kW
–47 dB
0.015 mF
0.15 mF
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
–15 V
–
+
40
f – Frequency (Hz)
DG201B/202B
Vishay Siliconix
Document Number: 70037
S-52433—Rev. G, 06-Sep-99 www.vishay.com FaxBack 408-970-5600
4-9
FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains
Gain = Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
–15 V
+15 V
–15 V
GND
DG419
30 pF
+15 V
+15 V
–15 V DG202B
Logic High = Switch On
+
–
LM101A
RF + RG
RG
VIN1
VIN2
CH
RF1
18 kRF1
9.9 kRF1
100 k
RG3
100
RG2
100
RG1
2 k
V+
V–
GNDV–
+5 V
VL
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
