MMBT2907A-7-F - Diodes - Datasheet.Live

MMBT2907A

Document number: DS30040 Rev. 13 - 2 1 of 6

www.diodes.com October 2011

MMBT2907A

60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMBT2222A)

• Ideal for Low Power Amplification and Switching

• Lead Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: molded Plastic, “Green” Compound

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3 & 4)

Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT2907A-7-F Commercial K2F 7 8 3,000

MMBT2907A-13-F Commercial K2F 13 8 10,000

MMBT2907AQ-7-F Automotive K2F 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

C

E

B

Top View

SOT23

Device Symbol Top View

Pin-Out

K2F = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

K2F

YM

MMBT2907A

Document number: DS30040 Rev. 13 - 2 2 of 6

www.diodes.com October 2011

MMBT2907A

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -60 V

Collector-Emitter Voltage VCEO -60 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current - Continuous IC -600 mA

Peak Collector Current ICM -800 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 5) PD 300 mW

Thermal Resistance, Junction to Ambient (Note 5) R

θ

JA 417 °C/W

Thermal Resistance, Junction to Lead (Note 6) R

θ

JL 350 °C/W

Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C

Notes: 5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air conditions; the

device is measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

0

50

100

25 50 75 100 125 150 175 200

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (mW)

D

T , AMBIENT TEMPERA TURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

400

0

R = 417 C/W

θ

JA

°

MMBT2907A

Document number: DS30040 Rev. 13 - 2 3 of 6

www.diodes.com October 2011

MMBT2907A

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage V

(

BR

)

CBO -60 ⎯ V IC = -10μA, IE = 0

Collector-Emitter Breakdown Voltage V

(

BR

)

CEO -60 ⎯ V IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage V

(

BR

)

EBO -5.0 ⎯ V IE = -10μA, IC = 0

Collector Cutoff Current ICBO ⎯ -10 nA

μA VCB = -50V, IE = 0

VCB = -50V, IE = 0, TA = 125°C

Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB

(

OFF

)

= -0.5V

Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB

(

OFF

)

= -0.5V

ON CHARACTERISTICS (Note 7)

DC Current Gain hFE

75

100

50

⎯

300

⎯

IC = -100µA, VCE = -10V

IC = -1.0mA, VCE = -10V

IC = -10mA, VCE = -10V

IC = -150mA, VCE = -10V

IC = -500mA, VCE = -10V

Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.4

-1.6 V IC = -150mA, IB = -15mA

IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.3

-2.6 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ⎯ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0

Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product fT 200 ⎯ MHz VCE = -20V, IC = -50mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Turn-On Time toff ⎯ 45 ns

VCC = -30V, IC = -150mA,

IB1 = -15mA

Delay Time td ⎯ 10 ns

Rise Time tr ⎯ 40 ns

Turn-Off Time toff ⎯ 100 ns VCC = -6.0V, IC = -150mA,

IB1 = IB2 = -15mA

Storage Time ts ⎯ 80 ns

Fall Time tf ⎯ 30 ns

Notes: 7. Short duration pulse test used to minimize self-heating effect.

MMBT2907A

Document number: DS30040 Rev. 13 - 2 4 of 6

www.diodes.com October 2011

MMBT2907A

1

10

1,000

100

-1 -10 -1,000

-100

h, D

C

U

R

EN

T

G

AIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 2 T y pical DC Current Gain vs. Collector Current

C

V = -5V

CE

T = 150°C

A

T = 25°C

A

T = -50°C

A

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1.0

-0.1 -1 -10 -100

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(ON)

I , COLLECTOR CURRENT (mA)

Fig. 4 T y pical Base-Emitter Saturation Vo ltage

vs. Col lecto r Cu r rent

C

V = -5V

CE

T = 150°C

A

T = 25°C

A

T = -50°C

A

0

-0.1

-0.2

-0.3

-0.6

-0.5

-0.4

-1 -10 -100 -1,000

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

I

C

B

= 10

T = 150°C

A

T = 25°C

A

T = -50°C

A

1

10

1,000

100

-1 -10 -100

f,

G

AI

N

-BA

N

DWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

I , COLLECTOR CURRENT (mA)

Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current

C

V = -5V

CE

I , BASE CURRENT (mA)

Fig. 7 Typical Collector Saturation Region

B

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

V

O

L

T

A

G

E (V)

CE

-0.001 -0.01

0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-0.1 -1 -10 -100

I = -1mA

C

I = -10mA

C

I = -30mA

C

I = -100mA

C

I = -300mA

C

CAPACITANCE (pF)

V , REVERSE VOLTAGE (V)

Fig. 5 Typical

R

Ca paci tance Char ac t er ist ics

0

5

10

15

20

25

30

35

024681012

14 16 18 20

Cobo

Cibo

f = 1MHz

MMBT2907A

Document number: DS30040 Rev. 13 - 2 5 of 6

www.diodes.com October 2011

MMBT2907A

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

MMBT2907A

Document number: DS30040 Rev. 13 - 2 6 of 6

www.diodes.com October 2011

MMBT2907A

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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