©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
HUF75307P3, HUF75307D3, HUF75307D3S
15A, 55 V, 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
inno vat ive UltraFET ® process . This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstandi ng p erformance. This device is c apa ble
of withstanding high ene rgy in the avalanche mode and the
diode exhibits very lo w reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
v oltage bus switches, and po wer manag em ent in portab le
and battery-operated products.
Formerly developmental type TA75307.
Features
• 15A, 55V
• Simulation Models
- Temperat ure Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
A vailable on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Wi dth C urve
• UIS Rating Curve
• Related Literature
- TB334, “G uid eli ne s for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Autom otive HUF A series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75307P3 TO-220AB 75307P
HUF75307D3 TO-251AA 75307D
HUF75307D3S TO-252AA 75307D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
D
G
S
JEDEC TO-220AB JEDEC TO-251AA
JEDEC TO -252AA
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet December 2001
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 55 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15
Figure 4 A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
0.3 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG - 55 t o 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case fo r 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source B reakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 55 - - V
Zero Gate Vo ltage Drain C urrent IDSS VDS = 50V, VGS = 0V - - 1 µA
VDS = 45V, VGS = 0V, TC = 150oC--250µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V
Drain to Source On Resist ance rDS(ON) ID = 15A, VGS = 10V (Figure 9) - 0.075 0.090 Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case RθJC (Figure 3) - - 3.3 oC/W
Thermal Resistance Junction to Ambient RθJA TO-220AB - - 62 oC/W
TO-251AA, TO-252AA - - 100 oC/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time tON VDD = 30V, ID ≅ 15A,
RL = 2.0Ω, VGS = 10V,
RGS = 100Ω
- - 60 ns
Turn-On De lay Time td(ON) -7-ns
Rise Time tr-40- ns
Turn-Off De lay Time td(OFF) -35- ns
Fall Tim e tf-45- ns
Turn-Off T ime tOFF --100ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 30V,
ID ≅ 15A,
RL = 2.0Ω
Ig(REF) = 1.0mA
(Figure13)
-1620nC
Gate Charge at 10V Qg(10) VGS = 0V to 10V - 9 11 nC
Threshold Gate Charge Qg(TH) VGS = 0 V to 2V - 0.6 0.8 nC
Gate to Source Gate C harge Qgs -1.2- nC
Reverse Transfer Capacitance Qgd -4-nC
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance CISS VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
- 250 - pF
Output Capacitance COSS - 100 - pF
Reverse Transfer Capacitance CRSS -25-pF
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Spe cifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNI TS
Source to D rain Diode Volt age VSD ISD = 15A - - 1.25 V
Reverse Recovery Time trr ISD = 15A, dISD/dt = 100A/µs--45ns
Reverse Recovered Charge QRR ISD = 15A, dISD/dt = 100A/µs--55nC
Typical Performance Curves
FIGURE 1. NORMALIZED PO WER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
00 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125 17
5
5
10
15
20
50 75 100 125 150 17
5
025
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
0.1
1
101
100
10-1
10-2
10-3
10-4
0.01
2
10-5
t, RECTANGULAR PULSE DURATION (s)
SIN GLE PULS E
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
ZθJC, NORMALIZED
THERMAL IMPED ANCE
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARA C TERISTICS
Typical Performance Curves (Continued)
100
101
100
10-1
10-2
10-3
10-4
10-5
10
200 TC = 25oC
I = I25 175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
IDM, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
10
100
10 100
0.1
120
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TJ = MAX RATED
TC = 25oC
100µs
10ms
1ms
VDSS(MAX) = 55V
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
10
100
0.01 0.1 1 1
0
0.001
1
200
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3* RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
STARTING TJ = 150oC
5
10
15
20
25
1234
5
0
0
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
PULSE DURATION = 80µs
TC = 25oC
VGS = 5V
VGS = 7V
VGS = 10V
VGS = 20V
DUTY CYCLE = 0.5% MAX
5
10
15
20
25
1.5 3.0 4.5 6.0 7.
5
0
0
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
175oC
-55oC
25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
FIGURE 9. NORMALIZED DRAIN T O SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTA GE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN T O SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves (Continued)
1.0
1.5
2.0
2.5
-40 0 40 80 120 160 20
0
0.5
-80
NORMALIZED DRAIN TO SOURCE
TJ, JUNCTION TEMPERATURE (oC)
ON RESISTANCE
PULSE DURAT ION = 80µs
VGS = 10V, ID = 15A
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
TJ, JUNCTION TEMPERATURE (oC)
THRESHOLD VOLTAGE
VGS = VDS, ID = 250µA
0.8
1.0
1.2
-40 0 40 80 120 160 20
0
-80
0.6
1.0
1.1
1.2
-40 0 40 80 120 160 20
0
-80
0.9
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
ID = 250µA
BREAKDOWN VOLTAGE
100
200
300
400
10 20 30 40 50 6
0
0
0
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
VGS = 0, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
2
4
6
8
10
24681
0
0
0
VGS, GATE TO SO URCE VOLTAGE (V)
VDD = 30V
Qg, GATE CHARGE (nC)
ID = 15A
ID = 12A
ID = 7.5A
ID = 4A
WAVEFORMS IN
DESCENDING ORDER:
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
RL
VGS +
-
VDS
VDD
DUT
IG(REF)
VDD
Qg(TH)
VGS = 2V
Qg(10)
VGS = 10V
Qg(TOT)
VGS = 20
V
VDS
VGS
I
g(REF)
0
0
Qgs Qgd
VGS
RL
RGS DUT
+
-VDD
VDS
VGS
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
PSPICE Ele ctrical Model
.SUBCKT H UF75307 2 1 3 ; re v June 1997
CA 12 8 4.5e-10
CB 15 14 4.1e-10
CIN 6 8 2.154e-10
DBODY 7 5 DBODYMOD
DBRE AK 5 11 DB REAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 56
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTH R ES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.97e-10
LSOURCE 3 7 2.39e-9
K1 LGATE LSOURCE 0.131
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 1.9
RLDRAIN 2 5 10
RLGATE 1 9 60
RLSOURCE 3 7 24
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.5e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTE M P 18 19 RVTE MPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMO D
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 1 9 DC 1
ESL C 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*35),4))}
.MODEL DBODYMOD D (IS= 1.6e-13 RS=1.28e-2 IKF=5.5 N=0.985 TRS1=2.9e-3 TRS2=-4e-6 CJO=3.5e-10 TT=3.1e-8 M=0.45 XTI=6)
.MODEL DBREAKMOD D (RS=2.5e- 1IKF=0.1 TRS1=-4e- 3TRS2=3e-5)
.MODE L DPLCAPMOD D ( C JO=5e -1 0IS=1e-3 0N =10 M =0.95)
.MODE L M M ED M OD NMO S (VTO=3.25 KP=2.2 IS=1e-3 0 N =10 TO X=1 L=1u W=1u RG=1 . 9)
.MODEL MST ROMOD NMOS (VTO=3.75 KP=14.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODE L MWEAKMO D NMOS (VTO=2.88 KP=0.0 3 IS =1e-30 N=10 TOX=1 L=1u W=1u RG=19 RS=0.1)
.MODEL RBREAKMOD RES (TC1=1.12e- 3TC2=1e-6)
.MODEL RDRAINMOD RES (TC1=2.3e-1 TC2=6e-4)
.MODEL RSLCMOD RES (TC1=4e-3 TC2=1e-6)
.MODEL RSOURCEMOD RES (TC1=1e-3 TC2=6e-6)
.MODEL RVTHRESMOD RES (TC=-3.31e-3 TC2=-1.49e-5)
.MODEL RVTEMPMOD RES (TC1=-1.4e- 3TC2=1e-9)
.MODEL S1AM OD VSWIT C H (RON=1e-5 ROFF=0.1 VON=-8.1 VOFF=-4 )
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-8.1)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0 VOFF=2)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2 VOFF=0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circu i t for the Power MOSFET Featu ring Gl obal
Temperature Options; IEEE Pow er Ele ctronics Speci alist Conference Records, 1991, written by William J . Hepp and C. Frank Wheatley.
18
22
+-
6
8
+
-
5
51
+
-
19
8
+-
17
18
6
8
+
-
5
8+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
14
8
13
814
13
MWEAK
EBREAK DBODY
RSOURCE
SOURCE
11
73
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES 16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE RGATE EVTEMP
9
ESG
LGATE
RLGATE 20
+
-
+
-
+
-
6
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
SABER Electrical Model
REV February 1999
template huf75307 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 1.6e-13, xti = 6, cjo = 3.5e-10, tt = 3.1e-8, n = 0.985, m = 0.45)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 5e-1 0, is = 1e-30, n = 10, m = 0.95 )
m..model mmedmod = ( ty pe=_n, vto = 3.25, kp = 2.2, is = 1e-30, tox = 1)
m..model mstr ongmod = (type=_n, vto = 3.75, kp = 14.75, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.88, kp = 0.03, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -8.1, voff = -4)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4, voff = -8.1)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0, voff = 2)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 2, voff = 0)
c.ca n12 n8 = 4.5e-10
c.cb n15 n14 = 4.1e-10
c.ci n n6 n8 = 2.154e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lga t e n1 n9 = 5.97e-1 0
l.lsourc e n3 n7 = 2.39e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res. rb r eak n17 n18 = 1, tc1 = 1.12e-3, t c 2 = 1e-6
res.rdbody n71 n5 = 1.28e-2, tc1 = 2.9e-3, tc2 = -4e-6
res.rdbreak n72 n5 = 0.25, tc1 = -4e-3, tc2 = 3e-5
res. rdrain n50 n16 = 1e-3, tc1 = 2.31-1, tc2 = 6e- 4
res.rgate n9 n20 = 1.9
res.r ldrain n2 n5 = 10
res. rl g ate n1 n9 = 60
res.rlsource n3 n7 = 24
res.rs lc1 n5 n51 = 1e-6, tc1 = 4e-3, tc2 = 1e-6
res.r slc2 n5 n50 = 1e3
res.rsource n8 n7 = 5.5e-2, tc1 = 1e-3, tc2 = 6e-6
res.rv temp n18 n19 = 1, tc1 = -1.4e-3, tc2 = 1e-9
res.rvthr es n22 n8 = 1, tc1 = -3.31e-3, tc2 = -1.49e-5
spe.ebreak n11 n7 n17 n18 = 56
spe.e ds n14 n8 n5 n8 = 1
spe.e gs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5 ,n51))))*((abs(v(n5,n51)*1e6/35))** 4))
}
}
18
22
+-
6
8
+
-
19
8
+-
17
18
6
8
+
-
5
8+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17 18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA CB
EGS EDS
14
8
13
814
13
MWEAK
EBREAK DBODY
RSOURCE
SOURC
E
11
73
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES 16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
10
5
51
50
RSLC2
1
GATE RGATE EVTEMP
9
ESG
LGATE
RLGATE 20
+
-
+
-
+
-
6
RDBODY
RDBREAK
72
71
HUF75307 P3, HUF75307D3, HUF75307D3S
©2001 Fairch ild Semicond uctor C orpo ration HUF75307P3, HUF75307D3, HUF75307D3S Rev. B
SPICE Thermal Model
REV February 1999
HUF75307
CTHERM1 th 6 8.0e-4
CTHERM2 6 5 1 .6e-3
CTHERM3 5 4 1 .9e-3
CTHERM4 4 3 2 .6e-3
CTHERM5 3 2 5 .5e-3
CTHERM6 2 tl 1.8e-2
RTHERM1 th 6 8.0e-3
RTHERM2 6 5 2 .1e-2
RTHERM3 5 4 2 .2e-1
RTHERM4 4 3 6 .4e-1
RTHERM5 3 2 7 .7e-1
RTHERM6 2 tl 1.0
SABER Thermal Model
SABER thermal model HUF75307
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm 1 t h 6 = 8.0e-4
ctherm.ctherm 2 6 5 = 1.6e- 3
ctherm.ctherm 3 5 4 = 1.9e- 3
ctherm.ctherm 4 4 3 = 2.6e- 3
ctherm.ctherm 5 3 2 = 5.5e- 3
ctherm.ctherm6 2 tl = 1.8e-2
rtherm.rtherm1 th 6 = 8.0e-3
rtherm.rtherm2 6 5 = 2.1e-2
rtherm.rtherm3 5 4 = 2.2e-1
rtherm.rtherm4 4 3 = 6.4e-1
rtherm.rtherm5 3 2 = 7.7e-1
rtherm.rtherm6 2 tl = 1.0
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th JUNCTION
CASE
HUF75307 P3, HUF75307D3, HUF75307D3S
