VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 (A) * AEC-Q101 qualified meets JESD 201 class 1A whisker test * Flexible solution rectification 1 for reliable AC power * Easy control peak current at charger power up to reduce passive / electromechanical components 2 3 1 (K) TO-247AD 3L * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (G) 3 APPLICATIONS * On-board and off-board EV / HEV battery chargers * Renewable energy inverters PRIMARY CHARACTERISTICS IT(AV) 35 A VDRM/VRRM 1600 V VTM 1.45 V IGT 150 mA TJ -40 C to +125 C Package TO-247AD 3L Circuit configuration Single SCR DESCRIPTION The VS-40TPS16LHM3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES 35 55 IRMS UNITS A VRRM/VDRM 1600 V ITSM 500 A 1.45 V VT 40 A, TJ = 25 C dv/dt 1000 V/s di/dt 100 A/s -40 to +125 C VRRM / VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM / IDRM AT 125 C mA 1600 1700 10 TJ VOLTAGE RATINGS PART NUMBER VS-40TPS16LHM3 Revision: 23-Feb-18 Document Number: 96134 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) TEST CONDITIONS VALUES UNITS TC = 79 C, 180 conduction half sine wave 35 IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Low level value of threshold voltage VT(TO)1 High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 Maximum peak on-state voltage VTM Maximum rate of rise of turned-on current dI/dt 55 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied Initial TJ = TJ max. 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied 500 880 1250 12 500 1.02 1.23 TJ = 125 C 9.74 7.50 110 A, TJ = 25 C 1.92 90 A, TJ = 25 C 1.82 TJ = 25 C 100 Maximum holding current IH Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 C 300 Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 C 350 TJ = 25 C 0.5 Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage IRRM/IDRM dV/dt TJ = 125 C A 420 VR = rated VRRM/VDRM TJ = TJ maximum, linear to 80 % VDRM, Rg- k = open A2s A2s V m V A/s mA 10 1000 V/s TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL TEST CONDITIONS Maximum required DC gate current to trigger UNITS 10 PG(AV) 2.5 IGM 2.5 A - VGM 10 V VGT IGT TJ = 25 C Anode supply = 6 V resistive load TJ = 125 C 1.7 270 Anode supply = 6 V resistive load TJ = 125 C Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 2.5 TJ = -40 C TJ = 25 C W 4.0 TJ = -40 C Maximum required DC gate voltage to trigger VALUES PGM TJ = 125 C, VDRM = rated value 150 V mA 80 0.25 V 6 mA Revision: 23-Feb-18 Document Number: 96134 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES UNITS C TJ, TStg -40 to +125 Maximum thermal resistance, junction to case RthJC 0.6 Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heat sink RthCS DC operation 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Approximate weight Mounting torque C/W 40 Mounting surface, smooth, and greased Marking device Case style TO-247AD 3L 40TPS16LH R thJC (DC) = 0.6 C/W 120 110 Conduction angle 100 30 60 90 90 120 180 80 70 0 10 20 30 40 Average On-State Current (A) Maximum Allowable Case Temperature (C) Fig. 1 - Current Rating Characteristics RthJC (DC) = 0.6 C/W 110 Conduction period 100 30 90 60 90 120 180 80 DC 70 0 10 20 30 40 50 Average On-State Current (A) Fig. 2 - Current Rating Characteristics 60 180 120 90 60 30 50 40 RMS limit 30 20 Conduction angle 10 TJ = 125 C 0 0 5 10 15 20 25 30 35 40 Average On-State Current (A) Fig. 3 - On-State Power Loss Characteristics 130 120 Maximum Average On-State Power Loss (W) 130 60 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (C) 80 DC 180 120 90 60 30 70 60 50 40 RMS limit 30 Conduction period 20 10 TJ = 125 C 0 0 10 20 30 40 50 60 Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 23-Feb-18 Document Number: 96134 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors 450 350 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 500 Peak Half Sine Wave Forward Current (A) 400 Peak Half Sine Wave Forward Current (A) 550 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 250 450 400 350 300 250 200 200 1 10 150 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) 100 10 TJ = 25 C TJ = 125 C 1 0.5 1 1.5 2 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 tr = 0.5 s, tp >= 6 s b) Recommended load line for <= 30 % rated di/dt: 20 V, 65 tr = 1 s, tp >= 6 s (1) PGM = 100 W, t p = 500 s (2) PGM = 50 W, t p = 1 ms (3) PGM = 20 W, t p = 25 ms (4) PGM = 10 W, t p = 5 ms (a) (b) = 25 C TJ = 125 C 1 TJ = -40 C TJ Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 Frequency Limited by PG(AV) 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 23-Feb-18 Document Number: 96134 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS16LHM3 Transient Thermal Impedance ZthJC (C/W) www.vishay.com Vishay Semiconductors 1 0.1 Steady state value (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE VS- Device code 1 40 T P S 16 L H M3 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: 4 - T = thyristor Package: P = TO-247 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage ratings 7 - L = long leads 8 - H = AEC-Q101 qualified 9 - 16 = 1600 V Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40TPS16LHM3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L www.vishay.com/doc?95626 Part marking information TO-247AD 3L www.vishay.com/doc?95007 Revision: 23-Feb-18 Document Number: 96134 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) P E B (2) R/2 A2 S (Datum B) O K M DBM P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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