VS-40TPS16LHM3
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Revision: 23-Feb-18 1Document Number: 96134
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Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
•Flexible solution for reliable AC power
rectification
• Easy control peak current at charger power up
to reduce passive / electromechanical components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-40TPS16LHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
PRIMARY CHARACTERISTICS
IT(AV) 35 A
VDRM/VRRM 1600 V
VTM 1.45 V
IGT 150 mA
TJ-40 °C to +125 °C
Package TO-247AD 3L
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-247AD 3L
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 35 A
IRMS 55
VRRM/VDRM 1600 V
ITSM 500 A
VT40 A, TJ = 25 °C 1.45 V
dv/dt 1000 V/μs
di/dt 100 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM / VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM / IDRM
AT 125 °C
mA
VS-40TPS16LHM3 1600 1700 10
VS-40TPS16LHM3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch IT(RMS) 55
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial
TJ = TJ max.
420
10 ms sine pulse, no voltage reapplied 500
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 880 A2s
10 ms sine pulse, no voltage reapplied 1250
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A2s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
1.02 V
High level value of threshold voltage VT(TO)2 1.23
Low level value of on-state slope resistance rt1 9.74 m
High level value of on-state slope resistance rt2 7.50
Maximum peak on-state voltage VTM
110 A, TJ = 25 °C 1.92 V
90 A, TJ = 25 °C 1.82
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/μs
Maximum holding current IHAnode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C 300
mA
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 350
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C VR = rated VRRM/VDRM
0.5
TJ = 125 °C 10
Maximum rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg- k = open 1000 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate voltage to trigger VGT
TJ = -40 °C
Anode supply = 6 V
resistive load
4.0
VTJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum required DC gate current to trigger IGT
TJ = -40 °C
Anode supply = 6 V
resistive load
270
mATJ = 25 °C 150
TJ = 125 °C 80
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = rated value 0.25 V
Maximum DC gate current not to trigger IGD 6mA
VS-40TPS16LHM3
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg -40 to +125 °C
Maximum thermal resistance, junction to case RthJC DC operation 0.6
°C/WMaximum thermal resistance, junction to ambient RthJA 40
Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AD 3L 40TPS16LH
70
80
90
100
110
120
130
0 10 20 30 40
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction angle
Average On-State Current (A)
R (DC) = 0.6 °C/W
thJC
70
80
90
100
110
120
130
0 10 20 30 40 50 60
DC
30° 60°
90°
120°
180°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Conduction period
R (DC) = 0.6 °C/W
thJC
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RMS limit
Conduction angle
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
180°
120°
90°
60°
30°
T = 125 °C
J
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60
DC
180°
120°
90°
60°
30°
RMS limit
Conduction period
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
T = 125 °C
J
VS-40TPS16LHM3
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
110100
200
250
300
350
400
450
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
150
200
250
300
350
400
450
500
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
550
1
10
100
0.5 1 1.5 2
T = 25 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
T = 125 °C
J
J
VS-40TPS16LHM3
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Revision: 23-Feb-18 5Document Number: 96134
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-40TPS16LHM3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions TO-247AD 3L www.vishay.com/doc?95626
Part marking information TO-247AD 3L www.vishay.com/doc?95007
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Steady state value
(DC operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedance ZthJC (°C/W)
2- Current rating (40 = 40 A)
3- Circuit configuration:
4- Package:
5
T = thyristor
- Type of silicon:
6- Voltage ratings
P = TO-247
S = standard recovery rectifier
9-
16 = 1600 V
Device code
62 43 5 7 8 9
40 T P S 16 L H M3
1-Vishay Semiconductors product
1
VS-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
7- L = long leads
8- H = AEC-Q101 qualified
Outline Dimensions
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Revision: 06-Mar-2020 1Document Number: 95626
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TO-247AD 3L
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 19.81 20.32 0.780 0.800
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 6.98 - 0.275
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
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