DS30380 Rev. 7 - 2 1 of 5 BSS8402DW
www.diodes.com ã Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Features
·Low On-Resistance: RDS(ON)
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Complementary Pair
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
·Case: SOT-363
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 5
·Terminal Connections: See Diagram
·Marking: KNP (See Page 5)
·Weight: 0.008 grams (approx.)
Mechanical Data
A
M
JL
D
BC
H
K
G
F
D1
S1G1D2
G2S2
S2
D2
Q1Q2
D1
S1
G2
G1
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a0°8°
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q1, 2N7002 Section @ TA = 25°C unless otherwise specified
Maximum Ratings - Total Device @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings P-CHANNEL - Q2, BSS84 Section @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS £ 20KWVDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID-130 mA
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SPICE MODEL: BSS8402DW
DS30380 Rev. 7 - 2 2 of 5 BSS8402DW
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Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 1.0 ¾2.5 V VDS = VGS, ID = 250mA
Static Drain-Source On-Resistance @ Tj = 25°C
@ Tj = 125°C RDS (ON) ¾3.2
4.4
7.5
13.5 WVGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0 ¾AVGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 25 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾7.0 20 ns VDD = 30V, ID= 0.2A,
RL = 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾11 20 ns
Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS -50 ¾¾VVGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ= 25°C
VDS = -50V, VGS = 0V, TJ= 125°C
VDS = -25V, VGS = 0V, TJ= 25°C
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) -0.8 ¾-2.0 V VDS =V
GS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ¾¾10 WVGS = -5V, ID = -0.100A
Forward Transconductance gFS .05 ¾¾SVDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾45 pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾10 ¾ns VDD = -30V, ID = -0.27A,
RGEN = 50W,V
GS = -10V
Turn-Off Delay Time tD(OFF) ¾18 ¾ns
Electrical Characteristics P-CHANNEL - Q2, BSS84 Section
Note: 3. Short duration test pulse used to minimize self-heating effect.
@ TA = 25°C unless otherwise specified
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DS30380 Rev. 7 - 2 3 of 5 BSS8402DW
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0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
V,DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V=10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
5.0V
2.1V
I,DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
D
Fi
g
. 2 On-Resistance vs Drain Current
V = 5.0V
GS
T=25°C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE (°C)
j
Fig. 3 On-Resistance vs Junction Temperature
V = 10V,
GS
I = 200mA
D
0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fi
g
. 4 On-Resistance vs. Gate-Source Volta
g
e
I=50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 1012141618
0
2
1
4
3
00.2
0.4
0.6 0.8 1
V GATE SOURCE CURRENT (V)
GS,
I , DRAIN CURRENT (A)
D
Fi
g
.5 T
y
pical Transfer Characteristics
6
5
8
7
10
9V=10V
DS
T = -55°C
A
T = +25°C
A
T = +125°C
A
T = +75°C
A
0
50
100
150
200
250
025 50 75 100 125 150 175 200
P,P
O
WER DISSIPATI
O
N(mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6 Max Power Dissipation vs.
Ambient Temperature
N-CHANNEL - 2N7002 SECTION
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DS30380 Rev. 7 - 2 4 of 5 BSS8402DW
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P-CHANNEL - BSS84 SECTION
-0.0
-
1
.
0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4
-1 -8
-7
-6
-5
I , DRAIN CURRENT (A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Fi
g
. 8, Drain Current vs. Gate Source Volta
g
e
T= -55°C
A
T = 25°C
A
T = 125°C
A
0
-
600
-500
-400
-300
-200
-100
0-2
-1 -5
-4
-3
I , DRAIN SOURCE CURRENT (mA)
D
V , DRAIN SOURCE (V)
DS
Fig. 7, Drain Source Current vs.
Drain Source Volta
g
e
T = 25°C
A
V= -5V
GS
-4.5V
-3.5V
-3.0V
-2.5V
0
3
6
9
12
1
5
-50 -25 025 50 125
100
75 150
T,JUNCTION TEMPERATURE (°C)
J
Fi
g
. 10, On-Resistance vs. Junction Temperature
V=-10V
GS
I = -0.13A
D
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE TO SOURCE (V)
GS
Fi
g
. 9, On Resistance vs. Gate Source Volta
g
e
T= 25°C
A
T = 125°C
A
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
D
Fi
g
. 11, On-Resistance vs. Drain Current
15.0
20.0
2
5.
0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
DS30380 Rev. 7 - 2 5 of 5 BSS8402DW
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Ordering Information
Device Packaging Shipping
BSS8402DW-7 SOT-363 3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS8402DW-7-F.
Marking Information
KNP
YM
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
(Note 4)
Year 2003 2004 2005 2006 2007 2008 2009
Code PRST
UVW
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