MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and (millimeters) Maximum Ratings Type Number TA=25 oC unless otherwise specified Value -40 -40 -5 -0.2 0.3 Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous Collector Power dissipation ELECTRICAL CHARACTERISTICS VCBO VCEO VEBO IC PC Parameter Symbol MIN Collector-base breakdown voltage IC=-10uA, Ie=0 Collector-emitter breakdown voltage IC=-1mA, IB=0 Emitter-base breakdown voltage IE=-10uA, IC=0 Collector cut-off current VCB=-40V IE=0 Collector cur-off current VCE=-30V VBE(off)=-3V Emitter cut-off current VEB=--5V IC=0 DC current gain VCE=-1V IC=-10mA VCE=-1V IC=-50mA VCE=-1V IC=-100mA Collector-emitter saturation voltage IC=-50mA, IB=-5mA V(BR)CBO V(BR)CEO VBE(ON) ICBO ICEX IEBO hFE(1) hFE(2) hFE(3) -40 -40 -5 Base-emitter saturation voltage VBE(sat) fT td tr ts tf IC=-50mA, IB=-5mA Transition frequency VCE=-20V IC=-10mA f=100MHz Delay time VCC=-3V, VBE=-0.5V IC=-10mA Rise time IB1 =-1.0mA Storage time VCC=-3V, IC=-10mA Fall time IB1= IB2=-1.0mA Operating and Storage Temperature Range 100 60 30 V V V A W MAX Units -0.1 -50 -0.1 300 -0.4 -0.95 VCE(sat) TJ, TSTG Units 250 35 35 225 75 -55 to + 150 CLASSIFICATION OF hFE1 Rank Range O 100-200 Y 200-300 Version: A07 V V V uA nA V V MHz nS nS nS nS o C RATINGS AND CHARACTERISTIC CURVES (MMBT3906) Version: A07 RATINGS AND CHARACTERISTIC CURVES (MMBT3906) Version: A07