Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
MMBT3906
0.3 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
As complementary type, the NPN transistor
MMBT3904 is recommended
Epitaxial planar die construction
Marking: 2A
Dimensions in inches and (millimeters)
Maximum Ratings TA=25 oC unless otherwise specified
Type Number Symbol Value Units
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -40 V
Emitter-base voltage VEBO -5 V
Collector current - continuous IC -0.2 A
Collector Power dissipation PC 0.3 W
ELECTRICAL CHARACTERISTICS
Parameter Symbol MIN MAX Units
Collector-base breakdown voltage IC=-10uA, Ie=0 V
(BR)CBO -40 V
Collector-emitter breakdown voltage IC=-1mA, IB=0 V(BR)CEO -40 V
Emitter-base breakdown voltage IE=-10uA, IC=0 VBE(ON) -5 V
Collector cut-off current V
CB=-40V IE=0 I
CBO -0.1 uA
Collector cur-off current V
CE=-30V VBE(off)=-3V ICEX -50 nA
Emitter cut-off current V
EB=--5V IC=0 IEBO -0.1
DC current gain V
CE=-1V IC=-10mA hFE(1) 100 300
V
CE=-1V IC=-50mA hFE(2) 60
V
CE=-1V IC=-100mA hFE(3) 30
Collector-emitter saturation voltage IC=-50mA, IB=-5mA VCE(sat) -0.4 V
Base-emitter saturation voltage IC=-50mA, IB=-5mA VBE(sat) -0.95 V
Transition frequency VCE=-20V IC=-10mA f=100MHz fT 250 MHz
Delay time V
CC=-3V, VBE=-0.5V IC=-10mA td 35 nS
Rise time I
B1 =-1.0mA tr 35 nS
Storage time VCC=-3V, IC=-10mA ts 225 nS
Fall time I
B1= IB2=-1.0mA tf 75 nS
Operating and Storage Temperature Range TJ, TSTG -55 to + 150 oC
CLASSIFICATION OF hFE1
Rank O Y
Range 100-200 200-300
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MMBT3906)
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MMBT3906)
Version: A07
