AS29F400T-90TC - Alliance Semiconductor

ALLIANCE SEMICONDUCTOR 1

High Performance

512K×8/256K×16

5V CMOS Flash EEPROM

AS29F400

512K×8/256K×16 CMOS Flash EEPROM

Features

• Organization: 512K×8 or 256K×16

• Sector architecture

- One 16K; two 8K; one 32K; and seven 64K byte sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 5.0±0.5V power supply for read/write operations

• Sector protection

• High speed 55/70/90/120/150 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

• Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified sectors

• 10,000 write/erase cycle endurance

• Hardware RESET pin

- Resets internal state machine to read mode

• Low power consumption

- 35 mA maximum read current

- 60 mA maximum program current

- 1 µA typical standby current (RESET = 0)

• JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO

• Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

-RY/BY

output

• Erase suspend/resume

- Supports reading data from or programming data to a sector

not being erased

•Low V

CC write lock-out below 3.2V

Logic block diagram

X decoder

VCC

VSS

Cell matrix

Y decoder Y gating

Data latch

Chip enable

Address latch

Input/output

buffers

Sector protect

Command

Program/erase

control

VCC detector

Erase voltage

generator

Program voltage

generator

Timer

A0–A17

STB

Output enable

Logic

RY/BY

BYTE

RESET

DQ0–DQ15

switches

A-1

Pin arrangement

A14

A15

A16

BYTE

VSS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

VSS

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

44-pin SO

DQ3

DQ11

A10

A11

A12

A13

2RY/BY

3A17

4A7

1NC

RESET

A10

A11

A12

A13

A14

A15 A16

BYTE

VSS

DQ15/A-1

DQ7

DQ14

RESET

RY/BY

NC DQ2

DQ10

DQ3

DQ11

VCC

DQ4

DQ12

DQ5

DQ6

DQ13

48-pin TSOP

A17

A1 A0

VSS

DQ0

DQ8

DQ1

DQ917

AS29F400

Selection guide

29F400-55 29F400-70 29F400-90 29F400-120 29F400-150 Unit

Maximum access time tAA 55 70 90 120 150 ns

Maximum chip enable access time tCE 55 70 90 120 150 ns

Maximum output enable access time tOE 25 30 35 50 55 ns

Preliminary information

AS29F400

Preliminary information

Functional description

The AS29F400 is a 4 megabit, 5 volt only Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. For flexible

erase and program capability, the 4 megabits of data is divided into 11 sectors: one 16K byte, two 8K byte, one 32K byte, and seven 64K

byte. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29F400 is offered in JEDEC standard 44-pin SO and

48-pin TSOP packages. This device is designed to be programmed and erased in-system with a single 5.0V VCC supply. The device can also

be reprogrammed in standard EPROM programmers.

The AS29F400 offers access times of 55/70/90/120/150 ns, allowing 0-wait state operation of high speed microprocessors. To eliminate

bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. Word mode (×16 output) is

selected by BYTE = High and Byte mode (×8 output) is selected by BYTE = Low.

The AS29F400 is fully compatible with the JEDEC single power supply Flash standard. Write commands to the command register using

standard microprocessor write timings. An internal state-machine uses register contents to control the erase and programming circuitry.

Write cycles also internally latch addresses and data needed for the programming and erase operations. Read data from the device in the

same manner as other Flash or EPROM devices. Use the program command sequence to invoke the automated on-chip programming

algorithm that automatically times the program pulse widths and verifies proper cell margin. Use the erase command sequence to invoke the

automated on-chip erase algorithm that preprograms the sector if it is not already programmed before executing the erase operation, times

the erase pulse widths, and verifies proper cell margin.

Boot sector architecture enables the device to boot from either the top (AS29F400T) or bottom (AS29F400B) sector. Sector erase

architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other sectors. A sector typically

erases and verifies within 1.0 seconds. Hardware sector protection disables both program and erase operations in all or any combination of

the eleven sectors. The device provides true background erase with Erase Suspend, which puts erase operations on hold to either read data

from or program data to a sector that is not being erased. The chip erase command will automatically erase all unprotected sectors.

A factory shipped AS29F400 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is programmed into the array one

byte/word at a time in any sequence and across sector boundaries. A sector must be erased to change bits from 0 to 1. Erase returns all

bytes/words in a sector to the erased state (all bits = 1). Each sector is erased individually with no effect on other sectors.

The device features single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulated voltages are

provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. The

RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of program or erase operations. The device automatically

resets to the read mode after program/erase operations are completed. DQ2 indicates which sectors are being erased.

The AS29F400 resists accidental erasure or spurious programming signals resulting from power transitions. Control register architecture

permits alteration of memory contents only after successful completion of specific command sequences. During power up, the device is set

to read mode with all program/erase commands disabled when VCC is less than VLKO (lockout voltage). The command registers are not

affected by noise pulses of less than 5 ns on OE, CE, or WE. CE and WE must be logical zero and OE a logical one to initiate write commands.

When the device’s hardware RESET pin is driven low, any program/erase operation in progress will be terminated and the internal state

machine will be reset to read mode. If the RESET pin is tied to the system reset circuitry and a system reset occurs during an automated on-

chip program/erase algorithm, data in address locations being operated on will become corrupted and require rewriting. Resetting the

device enables the system’s microprocessor to read boot-up firmware from the Flash memory.

The AS29F400 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes/words are programmed

one at a time using EPROM programming mechanism of hot electron injection.

AS29F400

Preliminary information

Operating modes

L = Low (<VIL); H = High (>VIH); VID = 12.0 ± 0.5V; X = don’t care; In ×16 mode, BYTE = VIH. In ×8 mode, BYTE = VIL and DQ8–14 is High Z with

DQ15 = A-1(X).

Mode definitions

Mode CE OE WE A0 A1 A6 A9 RESET DQ

ID read MFR code L L H LLLV

ID H Code

ID read device code L L H H L L VID H Code

Read L L H A0 A1 A6 A9 H DOUT

Standby H XXXXXXHHigh Z

Output disable L H H XXXXHHigh Z

Write L H L A0 A1 A6 A9 H DIN

Enable sector protect L VID Pulse/L L H L VID HX

Sector unprotect L VID Pulse/L L H H VID HX

Verify sector protect L L H L H L VID H Code

Temporary sector

unprotect XXXXXXXV

ID X

Hardware Reset XXXXXXXLHigh Z

Item Description

ID MFR code,

device code

Selected by A9 = VID(11.5–12.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.

When A0 is high (VIH), DOUT represents the device code for the 29F400.

Read mode Selected with CE = OE = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low

and tOE after OE is low.

Standby

Selected with CE = H. Part is powered down, and ICC reduced to <1.0 mA for TTL input levels and <100 µA

for CMOS levels. If activated during an automated on-chip algorithm, the device completes the operation

before entering standby.

Output disable Part remains powered up; but outputs disabled with OE pulled high.

Write

Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command

on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,

whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.

Enable

sector protect

Hardware protection circuitry implemented with external programming equipment causes the device to

disable program and erase operations for specified sectors.

Sector

unprotect Disables sector protection using external programming equipment.

Verify

sector protect

Verifies write protection for sector. Sectors are protected from program/erase operations on commercial

programming equipment. Determine if sector protection exists in a system by writing the ID read command

sequence and reading location XXX02h, where address bits A12–17 select the defined sector addresses. A

logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.

Temporary

sector

unprotect

Temporarily disables sector protection for in-system data changes to protected sectors. Apply +12V to RESET

to activate temporary sector unprotect mode. During temporary sector unprotect mode, program protected

sectors by selecting the appropriate sector address. All protected sectors revert to protected state on removal

of +12V from RESET.

AS29F400

Preliminary information

Flexible sector architecture

In word mode, there are one 8K word, two 4K word, one 16K word, and seven 32K word sectors. Address range is A17–A-1 if BYTE = VIL; address range is

A17–A0 if BYTE = VIH.

ID Sector address table

RESET Resets the interal state machine to read mode. If device is programming or erasing when RESET = L, data

may be corrupted.

Deep

power down Hold RESET low to enter deep power down mode (<1 µA CMOS). Recovery time to active mode is 1.5 µs.

Sector

Bottom boot sector architecture (AS29F400B) Top boot sector architecture (AS29F400T)

×8 ×16 Size (Kbytes) ×8 ×16 Size (Kbytes)

0 00000h–03FFFh 00000h–01FFFh 16 00000h–0FFFFh 00000h–07FFFh 64

1 04000h–05FFFh 02000h–02FFFh 8 10000h–1FFFFh 08000h–0FFFFh 64

2 06000h–07FFFh 03000h–03FFFh 8 20000h–2FFFFh 10000h–17FFFh 64

3 08000h–0FFFFh 04000h–07FFFh 32 30000h–3FFFFh 18000h–1FFFFh 64

4 10000h–1FFFFh 08000h–0FFFFh 64 40000h–4FFFFh 20000h–27FFFh 64

5 20000h–2FFFFh 10000h–17FFFh 64 50000h–5FFFFh 28000h–2FFFFh 64

6 30000h–3FFFFh 18000h–1FFFFh 64 60000h–6FFFFh 30000h–37FFFh 64

7 40000h–4FFFFh 20000h–27FFFh 64 70000h–77FFFh 38000h–3BFFFh 32

8 50000h–5FFFFh 28000h–2FFFFh 64 78000h–79FFFh 3C000h–3CFFFh 8

9 60000h–6FFFFh 30000h–37FFFh 64 7A000h–7BFFFh 3D000h–3DFFFh 8

10 70000h–7FFFFh 38000h–3FFFFh 64 7C000h–7FFFFh 3E000h–3FFFFh 16

Sector

Bottom boot sector address (AS29F400B) Top boot sector address (AS29F400T)

A17 A16 A15 A14 A13 A12 A17 A16 A15 A14 A13 A12

0 00000X 00 0XXX

1 000010 001XXX

2 000011 010XXX

3 0001XX 011XXX

4 001XXX 1 00XXX

5 010XXX 1 01XXX

6 011XXX 1 10XXX

7 100XXX 1 110XX

8 101XXX 111100

9 110XXX 111101

10 111XXX 11111X

Item Description

AS29F400

Preliminary information

READ codes

Key: L =Low (<VIL); H = High (>VIH); X =Don’t care; T = top; B = bottom

Command format

1 Bus operations defined in "Mode definitions," on page 3.

2 Reading from and programming to non-erasing sectors allowed in Erase Suspend mode.

3 Address bit A15 = X = Don’t care for all address commands except Program Address and Sector Address.

4 Address bit A16 = X = Don’t care for all address commands except Program Address and Sector Address.

5 Address bit A17 = X = Don’t care for all address commands except Program Address and Sector Address.

6 System should generate address patterns: ×16 mode - 5555h or 2AAAh to addresses A0–A14; ×8 mode - AAAAh or 5555h to addresses A-1–A14.

Mode A17–A12 A6 A1 A0 Code

MFR code (Alliance Semiconductor) X L L L 52h

Device code

×8 T boot X L L H 23h

×8 B boot X L L H ABh

×16 T boot X L L H 2223h

×16 B boot X L L H 22ABh

Sector protection Sector address L H L 01h protected

00h unprotected

Command sequence

Required

bus cycles

1st bus write cycle 2nd bus write cycle 3rd bus write cycle 4th bus write cycle 5th bus write cycle 6th bus write cycle

Address Data Address Data Address Data Address Data Address Data Address Data

Reset/Read 1 XXXXh F0h Read

Address Read Data

Reset/Read ×16 45555h AAh 2AAAh 55h 5555h F0h Read Address Read

Data

×8 AAAAh 5555h AAAAh

AutoselectI

D Read

×16

5555h

AAh

2AAAh

55h

5555h

90h

01h

Device code

2223h

(T)

22ABh (B)

×8 AAAAh 5555h AAAAh 23h (T)

ABh (B)

×16/×8

00h

MFR code 52h

XXX02h

Sector protection

01 = protected

00 = unprotected

Program ×16 45555h AAh 2AAAh 55h 5555h A0h Program

Address

Program

Data

×8 AAAAh 5555h AAAAh

Chip Erase ×16 65555h AAh 2AAAh 55h 5555h 80h 5555h AAh 2AAAh 55h 5555h 10h

×8 AAAAh 5555h AAAAh AAAAh 5555h AAAAh

Sector Erase ×16 65555h AAh 2AAAh 55h 5555h 80h 5555h AAh 2AAAh 55h Sector

Address 30h

×8 AAAAh 5555h AAAAh AAAAh 5555h

Sector Erase Suspend 1 XXXXh B0h

Sector Erase Resume 1 XXXXh 30h

AS29F400

Preliminary information

Command definitions

Item Description

Reset/Read

Initiate read or reset operations by writing the Read/Reset command sequence into the command

mode until command register contents are altered.

Device automatically powers up in read/reset state. This feature allows only reads, therefore

ensuring no spurious memory content alterations during power up.

ID Read

AS29F400 provides manufacturer and device codes in two ways. External PROM programmers

typically access the device codes by driving +12V on A9. AS29F400 also contains an ID Read

command to read the device code with only +5V, since multiplexing +12V on address lines is

generally undesirable.

Initiate device ID read by writing the ID Read command sequence into the command register.

Follow with a read sequence from address XXX00h to return MFR code. Follow ID Read command

sequence with a read sequence from address XXX01h to return device code.

To verify write protect status on sectors, read address XXX02h. Sector addresses A17–A12 produce

a 1 on DQ0 for protected sector and a 0 for unprotected sector.

Exit from ID read mode with Read/Reset command sequence.

Hardware Reset

Holding RESET low for 500 ns resets the device, terminating any operation in progress; data

handled in the operation is corrupted. The internal state machine resets 20 µs after RESET is driven

low. RY/BY remains low until the RESET operation is completed. After RESET is set high, there is a

delay of 1.5 µs for the device to permit read operations.

Byte/word

Programming

Programming the AS29F400 is a four bus cycle operation performed on a byte-by-byte or word-

by-word basis. Two unlock write cycles precede the Program Setup command and program data

write cycle. Upon execution of the program command, no additional CPU controls or timings are

necessary. Addresses are latched on the falling edge of CE or WE, whichever is last; data is latched

on the rising edge of CE or WE, whichever is first. The AS29F400’s automated on-chip program

algorithm provides adequate internally-generated programming pulses and verifies the

programmed cell margin.

Check programming status by sampling data on the DATA polling (DQ7), toggle bit (DQ6), or

RY/BY pin. The AS29F400 returns the equivalent data that was written to it (as opposed to

complemented data), to complete the programming operation.

The AS29F400 ignores commands written during programming. A hardware reset occurring

during programming may corrupt the data at the programmed location.

AS29F400 allows programming in any sequence, across any sector boundary. Changing data from

0 to 1 requires an erase operation. Attempting to program data 0 to 1 results in either DQ5 = 1

(exceeded programming time limits) or success according to DATA polling; reading this data after

a read/reset operation returns a 0. When programming time limit is exceeded, DQ5 reads high,

and DQ6 continues to toggle. In this state, a Reset command returns the device to read mode.

Chip Erase

Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional

unlock write cycles; and finally the Chip Erase command.

Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip

erase algorithm is invoked with the Chip Erase command sequence, AS29F400 automatically

programs and verifies the entire memory array for an all-zero pattern prior to erase. The AS29F200

returns to read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding

time limit.

AS29F400

Preliminary information

Sector Erase

Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional

unlock write cycles, and finally the Sector Erase command. Identify the sector to be erased by

addressing any location in the sector. The address is latched on the falling edge of WE; the

command, 30h is latched on the rising edge of WE. The sector erase operation begins after a 80 µs

time-out.

To erase multiple sectors, write the Sector Erase command to each of the addresses of sectors to

erase after following the six bus cycle operation above. Timing between writes of additional

sectors must be <80 µs, or the AS29F400 ignores the command and erasure begins. During the

80 µs time-out period any falling edge of WE resets the time-out. Any command (other than

Sector Erase or Erase Suspend) during time-out period resets the AS29F400 to read mode, and the

device ignores the sector erase command string. Erase such ignored sectors by restarting the Sector

Erase command on the ignored sectors.

The entire array need not be written with 0s prior to erasure. AS29F400 writes 0s to the entire

sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected

sectors unaffected. AS29F400 requires no CPU control or timing signals during sector erase

operations.

Automatic sector erase begins after 80 µs time-out from the last rising edge of WE from the sector

erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling address

must be performed on addresses that fall within the sectors being erased. AS29F400 returns to read

mode after sector erase unless DQ5 is set high by exceeding the time limit.

Erase Suspend

Erase Suspend allows interruption of sector erase operations to read data from or program data to a

sector not being erased. Erase suspend applies only during sector erase operations, including the

time-out period. Writing an Erase Suspend command during sector erase time-out results in

immediate termination of the time-out period and suspension of erase operation.

AS29F400 ignores any commands during erase suspend other than Read/Reset, Program or Erase

Resume commands. Writing the Erase Resume Command continues erase operations. Addresses

are DON’T CARE when writing Erase Suspend or Erase Resume commands.

AS29F400 takes 0.1–15 µs to suspend erase operations after receiving Erase Suspend command. To

determine completion of erase suspend, either check DQ6 after selecting an address of a sector not

being erased, or poll RY/BY. Check DQ2 in conjunction with DQ6 to determine if a sector is

being erased. AS29F400 ignores redundant writes of Erase Suspend.

While in erase-suspend mode, AS29F400 allows reading data (erase-suspend-read mode) from or

programming data (erase-suspend-program mode) to any sector not undergoing sector erase,

treated as standard read or standard programming mode. AS29F400 defaults to erase-suspend-read

mode while an erase operation has been suspended.

Write the Resume command 30h to continue operation of sector erase. AS29F400 ignores

redundant writes of the Resume command. AS29F400 permits multiple suspend/resume

operations during sector erase.

Sector Protect

When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are

activated for about <1 µs. When attempting to erase a protected sector, DATA polling and

Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode

without altering the specified sectors.

Ready/Busy

RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or

completed (RY/BY = high). The device does not accept Program/Erase commands when

RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY is an open drain

output, enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.

Item Description

AS29F400

Preliminary information

Status operations

Write operation status

†Toggles with OE or CE only for erasing or erase suspended sector addresses.

‡Toggles only if DQ5 = 1 and address applied is within sector that exceeded timing limits.

DQ8–DQ15 = Don’t care in ×16 mode.

DATA polling (DQ7)

Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects

complement of data last written when read during the automated on-chip algorithm (0 during

erase algorithm); reflects true data when read after completion of an automated on-chip algorithm

(1 after completion of erase agorithm).

Toggle bit 1 (DQ6)

Active during automated on-chip algorithms or sector time outs. DQ6 toggles when CE or OE

toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth

pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;

after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors,

DQ6 toggles for <1 µs during writes, and <5 µs during erase (if all selected sectors are protected);

in both cases, data is unaffected.

Exceeding time limit

(DQ5)

Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains

active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are

defective; during sector erase, the sector is defective (in this case, reset the device and execute a

program or erase command sequence to continue working with functional sectors); during byte

programming, that particular byte is defective. Attempting to program 0 to 1 will set DQ5 = 1.

Sector erase timer

(DQ3)

Checks whether sector erase timer window is open. If DQ3 = 1, erase is in progress; no commands

will be accepted. If DQ3 = 0, the device will accept sector erase commands. Check DQ3 before and

after each Sector Erase command to verify that the command was accepted.

Toggle bit 2 (DQ2)

During sector erase, DQ2 toggles with OE or CE only during an attempt to read a sector being

erased. During chip erase, DQ2 toggles with OE or CE for all addresses. If DQ5 = 1, DQ2 toggles

only at sector addresses where failure occurred, and will not toggle at other sector addresses. Use

DQ2 in conjunction with DQ6 to determine whether device is in auto erase or erase suspend

mode.

Status DQ7 DQ6 DQ5 DQ3 DQ2 RY/BY

In progress

Auto programming (byte/word) DQ7 Toggle 0 0 No toggle 0

Program/erase in auto erase 0 Toggle 0 1 Toggle†0

Erase

suspend

mode

Read erasing sector 1 No toggle 0 0 Toggle 1

Read non-erasing

sector Data Data Data Data Data 1

Program in erase

suspend DQ7 Toggle 0 0 Toggle†0

Exceeded time limits

Auto programming (byte/word) DQ7 Toggle 1 0 No toggle 0

Program/erase in auto erase 0 Toggle 1 1 Toggle‡0

Program in erase suspend DQ7 Toggle 1 0 Toggle‡0

AS29F400

Preliminary information

Automated on-chip programming algorithm Automated on-chip erase algorithm

†The system software should check the status of DQ3 prior to and

following each subsequent sector erase command to ensure command

completion. The device may not have accepted the command if DQ3 is

high on second status check.

Write program command sequence

(see below)

DATA poll device

Verify byte?

Programming completed

5555h/AAh

2AAAh/55h

5555h/A0h

Program address/program data

Program command sequence

×16 mode (address/command):

YES

5555h/AAh

2AAAh/55h

5555h/80h

Chip erase command sequence

5555h/AAh

2AAAh/55h

5555h/10h

Sector erase command sequence

Erase complete

Sector address/30h

Optional multiple

sector erase commands†

×16 mode (address/command): ×16 mode (address/command):

5555h/AAh

2AAAh/55h

5555h/80h

5555h/AAh

2AAAh/55h

DATA polling or toggle bit

successfully completed

Write erase command sequence

(see below)

AS29F400

Preliminary information

DATA polling algorithm

†VA = Byte address for programming. VA = any of the sector

addresses within the sector being erased during Sector Erase. VA

= valid address equals any non-protected sector group address

during Chip Erase.

‡DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not

change simultaneously.

Toggle bit algorithm

†DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling

when DQ5 changes to 1.

Read byte (DQ0–DQ7)

Address = VA†

Read byte (DQ0–DQ7)

Address = VA

DONE

NO†

YES

FAIL

YES†

YES

DONE

DQ7

data

DQ5

DQ7

data‡

Read byte (DQ0–DQ7)

Address = don’t care

Read byte (DQ0–DQ7)

Address = don’t care

DONE

YES

FAIL

DONE

DQ6

toggle

DQ6

toggle†

DQ5

AS29F400

Preliminary information

DC electrical characteristics VCC = 5.0±0.5V

1 Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. VOUT = 0.5V was selected to avoid test problems

caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)

2 The ICC current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically

is less than 2 mA/MHz with OE at VIH.

CC active while program or erase operations are in progress.

Maximum negative overshoot waveform

Maximum positive overshoot waveform

Parameter Symbol Test conditions Min Max Unit

Input load current ILI VIN = VSS to VCC, VCC = VCC MAX -±1µA

A9 Input load current ILIT VCC = VCC MAX, A9 = 12.5V 90 µA

Output leakage current ILO VOUT = VSS to VCC, VCC = VCC MAX -±1µA

Output short circuit current1IOS VOUT = 0.5V - 200 mA

Active current, read @ 6MHz2ICC CE = VIL, OE = VIH -35mA

Active current, program/erase3ICC2 CE = VIL, OE = VIH -60mA

Standby current (TTL) ISB1 CE = OE = VIH, VCC = VCCMAX,

RESET = VIH -1.0mA

Standby current (CMOS) ISB2 CE = VCC + 0.5V, OE = VIH,

VCC = VCC MAX, RESET = VCC ± 0.5V -100µA

Deep power down current ISB3 RESET = VSS ± 0.3V - 5.0 µA

Input low voltage VIL -0.5 0.8 V

Input high voltage VIH 2.0 VCC + 0.5 V

Output low voltage VOL IOL = 5.8mA, VCC = VCC MIN -0.45V

Output high voltage VOH1 IOH = -2.5 mA, VCC = VCC MIN 2.4 - V

VOH2 IOH = -100 µA, VCC = VCC MIN VCC - 0.4 - V

Low VCC lock out voltage VLKO 3.2 4.2 V

Input HV select voltage VID 11.5 12.5 V

20 ns20 ns20 ns

-2.0V

-0.5V

+0.8V

AAAA

AAA

AAAA

AAA

20 ns20 ns20 ns

VCC+2.0V

VCC+0.5V

+2.0V

AAAA

AS29F400

Preliminary information

AC parameters: read cycle

Key to switching waveforms

Read waveform

JEDEC

Symbol Std Symbol Parameter

-55 -70 -90 -120 -150

UnitMin Max Min Max Min Max Min Max Min Max

tAVAV tRC Read cycle time 55 - 70 - 90 - 120 - 150 - ns

tAVQV tACC Address to output delay - 55 - 70 - 90 - 120 - 150 ns

tELQV tCE Chip enable to output - 55 - 70 - 90 - 120 - 150 ns

tGLQV tOE Output enable to output - 25 - 30 - 35 - 50 - 55 ns

tEHQZ tDF Chip enable to output High Z - 15 - 20 - 20 - 30 - 35 ns

tGHQZ tDF Output enable to output High Z - 15 - 20 - 20 - 30 - 35 ns

tAXQX tOH Output hold time from addresses,

first occurrence of CE or OE 0-0-0-0-0-ns

ELFL/ELFH CE to BYTE transition low/high - 5 - 5 - 5 - 5 - 5 ns

tPHQV tPWH RESET high to output delay - 1.5 - 1.5 - 1.5 - 1.5 - 1.5 µs

tBDEL BYTE switching to valid data - 55 - 70 - 90 - 120 - 150 ns

tFLQZ BYTE low to DQ8–DQ15 tri-state 25 - 30 - 35 - 50 - 55 - ns

AAAA

AAA

AAAA

AAA

Undefined output/don’t care

AAAA

AAA

AAAA

AAA

Falling input

AAAA

AAA

AAAA

AAA

Rising input

AAAA

AAA

AAAA

Addresses stable

Addresses

tRC

tACC

tOE

tOEH

tCE tOH

tDF

Outputs High Z High Z

Output valid

tELFL/ELFH

tPWH

BYTE

RESET

tBDEL

AS29F400

Preliminary information

AC parameters — write cycle WE controlled

Write waveform WE controlled

JEDEC

Symbol Std Symbol Parameter

-55 -70 -90 -120 -150

UnitMin Max Min Max Min Max Min Max Min Max

tAVAV tWC Write cycle time 55 - 70 - 90 - 120 - 150 - ns

tAVWL tAS Address setup time 0 - 0 - 0 - 0 - 0 - ns

tWLAX tAH Address hold time 40 - 45 - 45 - 50 - 50 - ns

tDVWH tDS Data setup time 25 - 30 - 45 - 50 - 50 - ns

tWHDX tDH Data hold time 0 - 0 - 0 - 0 - 0 - ns

tOES Output enable setup time 0 - 0 - 0 - 0 - 0 - ns

tOEH Output enable hold time:

Toggle and data polling 10 - 10 - 10 - 10 - 10 - ns

tREADY RESET pin low to read mode 20 - 20 - 20 - 20 - 20 - µs

tRP RESET pulse 500 - 500 - 500 - 500 - 500 - ns

tGHWL tGHWL Read recover time before write 0 - 0 - 0 - 0 - 0 - ns

tELWL tCS CE setup time 0 - 0 - 0 - 0 - 0 - ns

tWHEH tCH CE hold time 0-0-0-0-0- ns

WLWH tWP Write pulse width 35 - 35 - 45 - 50 - 55 - ns

tWHWL tWPH Write pulse width high 20 - 20 - 20 - 20 - 20 - ns

tWHWH1 tWHWH1 Programming time 15-15-15-15-15- µs

WHWH2 tWHWH2 Erase time 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - sec

AAAA

Addresses

DATA

VSS

tWC tAS

tAH

tGHWL; tOES

tWP

tCS tWPH

tDH

tWHWH1 or 2

tDS

DQ7D

OUT

Program

5555h Program address Program address

3rd bus cycle

tCH

DATA polling

data

A0h

AS29F400

Preliminary information

AC parameters—write cycle 2 CE controlled

Write waveform 2 CE controlled

JEDEC

Symbol Std Symbol Parameter

-55 -70 -90 -120 -120

UnitMin Max Min Max Min Max Min Max Min Max

tAVAV tWC Write cycle time 55 - 70 - 90 - 120 - 150 - ns

tAVEL tAS Address setup time 0 - 0 - 0 - 0 - 0 - ns

tELAX tAH Address hold time 40 - 45 - 45 - 50 - 50 - ns

tDVEH tDS Data setup time 25 - 30 - 45 - 50 - 50 - ns

tEHDX tDH Data hold time 0 - 0 - 0 - 0 - 0 - ns

tOES Output enable setup time 0 - 0 - 0 - 0 - 0 - ns

tOEH

Output enable hold time: Read 0 - 0 - 0 - 0 - 0 - ns

Output enable hold time:

Toggle and data polling 10 - 10 - 10 - 10 - 10 - ns

tGHEL tGHEL Read recover time before write 0 - 0 - 0 - 0 - 0 - ns

tWLEL tWS WE setup time 0 - 0 - 0 - 0 - 0 - ns

tEHWH tWH WE hold time 0 - 0 - 0 - 0 - 0 - ns

tELEH tCP CE pulse width 35 - 35 - 45 - 50 - 55 - ns

tEHEL tCPH CE pulse width high 20 - 20 - 20 - 20 - 20 - ns

tWHWH1 tWHWH1 Programming time 15 - 15 - 15 - 15 - 15 - µs

tWHWH2 tWHWH2 Erase time 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - sec

AAAA

AAA

AAAA

AAA

Addresses

Data

Program address5555h Program address

A0h Program DQ7D

OUT

tWC tAS tAH

tGHEL, tOES

tCP

tCPH tDH

tDS

tWHWH1 or 2

DATA polling

data

AS29F400

Preliminary information

Erase waveform ×16 mode only

RESET waveform

RY/BY waveform

DATA polling waveform

Addresses

Data

5555h 2AAAh 5555h 5555h 2AAAh Sector address

tWC tAS

tAH

tGHWL

AAh 55h 80h AAh 55h 30h

10h for Chip Erase

tWP

tCS

tWPH

tDH

tDS

tWC

RY/BY

RESET

tRP

tREADY

AAAA

AAA

RY/BY

Rising edge of last WE signal

Program/erase

operation

tri-stated open-drain

AAAA

DQ7

tCH

tOH

tWHWH1 or 2

tOE

tOEH

tCE

tDF

High Z

Input DQ7 Output DQ7 Output

AAAA

AS29F400

Preliminary information

Toggle bit waveform

Erase and programming performance

Latchup tolerance

Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.

AC test conditions

Parameter

Limits

UnitMin Typical Max

Sector erase and verify-1 time (excludes 00h programming prior to erase) -1.0 - sec

Word programming time - 15 - µs

Byte program time - 15 - µs

Chip programming time - 2.5 - sec

Erase program cycles - - 10,000 cycles

Parameter Min Max Unit

Input voltage with respect to VSS on A9, OE, and RESET pin -1.0 +13.0 V

Input voltage with respect to VSS on all DQ, address and control pins -1.0 VCC+1.0 V

Current -100 +100 mA

AAAA

DQ6

tOEH

tDH tOE

6.2KΩ

100 pF*

2.7KΩ

Device under test

VSS

+5.0V

*includi ng scope

and jig capacitance

VSS VSS

1N3064

or equ ivalent

1N3064

or equivalent

AS29F400

Preliminary information

Recommended operating conditions

Absolute maximum ratings

Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute max-

imum rating conditions for extended periods may affect reliability.

TSOP pin capacitance

SO pin capacitance

Data retention

Parameter Symbol Min Typ Max Unit

Supply voltage VCC +4.5 5.0 +5.5 V

VSS 000V

Input voltage VIH 2.0 - VCC + 0.5 V

VIL –0.5 - 0.8 V

Parameter Symbol Min Max Unit

Input voltage (Input or DQ pin) VIN –2.0 +7.0 V

Input voltage (A9 pin, OE, RESET)V

IN –2.0 +13.0 V

Power supply voltage VCC -0.5 +5.5 V

Operating temperature TOPR –55 +125 °C

Storage temperature (plastic) TSTG –65 +125 °C

Short circuit output current IOUT -200mA

Symbol Parameter Test setup Typ Max Unit

CIN Input capacitance VIN = 0 6 7.5 pF

COUT Output capacitance VOUT = 0 8.5 12 pF

CIN2 Control pin capacitance VIN = 0 8 10 pF

Symbol Parameter Test setup Typ Max Unit

CIN Input capacitance VIN = 0 6 7.5 pF

COUT Output capacitance VOUT = 0 8.5 12 pF

CIN2 Control pin capacitance VIN = 0 8 10 pF

Parameter Temp.(°C) Min Unit

Minimum pattern data retention time 150° 10 years

125° 20 years

AS29F400

Preliminary information

Package dimensions

5678910111213141516171819202122 234 1

403938373635343332313029282726252423 434241 44

s t

48-pin TSOP

44-pin SO

0–5°

0–8°

48-pin TSOP

min (mm) max (mm)

a–1.20

b–0.25

c0.50.7

d0.10.21

e 18.30 18.50

f 19.80 20.20

g 11.90 12.10

h0.951.05

i0.050.15

j–0.50

44-pin SO

min (mm) max (mm)

m 28.00 28.40

n0.350.50

o0.100.35

p2.172.45

q–2.80

r1.27–

s 13.10 13.50

t 15.70 16.30

u0.061.00

w0.100.21

AS29F400

Preliminary information

AS29F400 ordering codes

AS29F400 part numbering system

Package \ Access Time 55ns (commercial only) 70 ns (commercial/industrial) 90 ns (commercial/industrial) 120 ns (commercial/industrial) 150 ns (commercial/industrial)

TSOP, 12×20 mm,

48-pin

AS29F400B-55TC AS29F400B-70TC

AS29F400B-70TI

AS29F400B-90TC

AS29F400B-90TI

AS29F400B-120TC

AS29F400B-120TI

AS29F400B-150TC

AS29F400B-150TI

AS29F400T-55TC AS29F400T-70TC

AS29F400T-70TI

AS29F400T-90TC

AS29F400T-90TI

AS29F400T-120TC

AS29F400T-120TI

AS29F400T-150TC

AS29F400T-150TI

SO, 600 mil wide,

44-pin

AS29F400B-55SC AS29F400B-70SC

AS29F400B-70SI

AS29F400B-90SC

AS29F400B-90SI

AS29F400B-120SC

AS29F400B-120SI

AS29F400B-150SC

AS29F400B-150SI

AS29F400T-55SC AS29F400T-70SC

AS29F400T-70SI

AS29F400T-90SC

AS29F400T-90SI

AS29F400T-120SC

AS29F400T-120SI

AS29F400T-150SC

AS29F400T-150SI

AS29F 400 X –XXX X X

Flash EEPROM prefix Device number B (bottom) or

T (top) boot block Address access time Package: S= SO

T= TSOP

Temperature range:

C = Commercial: 0°C to 70°C

I = Industrial: -40°C to 85°C

AS29F400

DOMESTIC REPS

ALABAMA

Concord Component Reps

190 Lime Quarry, Suite #102

Madison, AL 35758

(205) 772-8883

ARKANSAS

Southern States Marketing

1702 N. Collins Blvd., Suite

#250

Richardson, TX 75080

(214) 238-7500

CALIFORNIA

North:

Brooks Technical Group

883 N. Shoreline Blvd.

Mountain View, CA 94043

(415) 960-3880

South:

Action Technical Sales

2137 Newcastle Avenue

Cardiff, CA 92007-1824

(619) 634-1488

Competitive Technology

16253 Laguna Canyon Road

Suite #160

Irvine, CA 92718.

(714) 450-0170

COLORADO

Technology Sales

1720 South Bellaire Street

Suite #910

Denver, CO 80222

(303) 692-8835

CONNECTICUT

Kitchen & Kutchin Associates

154 State St.

North Haven, CT 06473

(203) 239-0212

DELAWARE

Electro Tech

621 E. Germantown Pike,

Suite #202

Norristown, PA 19401-2454

(610) 272-2125

FLORIDA

Micro-Electronic Components

Corp.

400 Fairway Drive, Suite #107

Deerfield Beach, FL 33441

(954) 426-8944

Micro-Electronic Components

Corp.

822 Riverbend Blvd.

Longwood, FL 32779

(407) 682-9602

Micro-Electronic Components

Corp.

10637 Harborside Drive, North

Largo, FL 34643

(813) 393-5011

GEORGIA

Concord Component Reps

6825 Jimmy Carter Blvd. 1303

Norcross, GA 30071

(770) 416-9597

HAWAII

Brooks Technical Group

883 N. Shoreline Blvd.

Mountain View, CA 94043

(415) 960-3880

IDAHO

ES/Chase

6655 SW Hampton, Suite #120

Tigard, OR 97223

(503) 684-8500

ILLINOIS

El-Mech

3511 N. Cicero Avenue

Chicago, IL 60641

(312) 794-9100

CenTech

3751 Pennridge Dr., Suite #107

Bridgeton, MO 63044

(314) 291-4230

INDIANA

CC Electro Sales

1843 N. Meridian Street

Indianapolis, IN 46202-1411

(317) 921-5000

KANSAS

CenTech

10312 East 63rd Terrace

Raytown, MO 64133

(816) 358-8100

KENTUCKY

CC Electro Sales

1843 N. Meridian Street

Indianapolis, IN 46202-1411

(317) 921-5000

LOUISIANA

Southern States Marketing

13831 NW Freeway, Suite #151

Houston, TX 77040

(713) 895-8533

Southern States Marketing

1702 N. Collins Blvd., Suite

#250

Richardson, TX 75080

(214) 238-7500

MAINE

Kitchen & Kutchin Associates

87 Cambridge Street

Burlington, MA 01803

(617) 229-2660

MARYLAND

Chesapeake Technology

3905 National Drive, Suite #425

Burtonsville, MD 20866

(301) 236-0530

MASSACHUSETTS

Kitchen & Kutchin Associates

87 Cambridge Street

Burlington, MA 01803

(617) 229-2660

MICHIGAN

Enco Group

799 Industrial Court

Bloomfield Hills, MI 48302

(810) 338-8600

MINNESOTA

D.A. Case Associates

4620 W. 77th Street Suite #250

Minneapolis, MN 55435

(612) 831-6777

MISSOURI

CenTech

3751 Pennridge Dr., Suite #107

Bridgeton, MO 63044

(314) 291-4230

CenTech

10312 East 63rd Terrace

Raytown, MO 64133

(816) 358-8100

MISSISSIPPI

Concord Component Reps

190 Lime Quarry, Suite #102

Madison, AL 35758

(205) 772-8883

MONTANA

ES/Chase

6655 SW Hampton, Suite #120

Tigard, OR 97223

(503) 684-8500

NEBRASKA

CenTech

10312 East 63rd Terrace

Raytown, MO 64133

(816) 358-8100

NEVADA

Brooks Technical Group

883 N. Shoreline Blvd.

Mountain View, CA 94043

(415) 960-3880

NEW HAMPSHIRE

Kitchen & Kutchin Associates

87 Cambridge Street

Burlington, MA 01803

(617) 229-2660

NEW JERSEY

ERA Associates

354 Veterans Memorial Hwy

Commack, NY 11725

(800) 645-5500

Electro Tech

621 E. Germantown Pike

Suite #202

Norristown, PA 19401-2454

(610) 272-2125

NEW YORK

ERA Associates

354 Veterans Memorial Hwy

Commack, NY 11725

(516) 543-0510

Tri-Tech Electronics

1043 Front Street

Binghamton, NY 13905

(607) 722-3580

Tri-Tech Electronics

349 W. Commercial Street

Suite #2585

East Rochester, NY 14445

(716) 385-6500

NORTH CAROLINA

Concord Component Reps

10608 Dunhill Terrace

Raleigh, NC 27615

(919) 846-3441

NORTH DAKOTA

D.A. Case Associates

4620 W. 77th Street Suite #250

Minneapolis, MN 55435

(612) 831-6777

OHIO

Midwest Marketing Associates

5001 Mayfield Road Suite #319

Lyndhurst, OH 44124

(216) 381-8575

Midwest Marketing Associates

30 Marco Lane

Dayton, OH 45458

(513) 433-2511

OKLAHOMA

Southern States Marketing

1702 N. Collins Blvd., Suite

#250

Richardson, TX 75080

(214) 238-7500

OREGON

ES/Chase

6655 SW Hampton, Suite #120

Tigard, OR 97223

(503) 684-8500

PENNSYLVANIA

Electro Tech

621 E. Germantown Pike

Suite #202

Norristown, PA 19401-2454

(610) 272-2125

Midwest Marketing Associates

5001 Mayfield Road Suite #319

Lyndhurst, OH 44124

(216) 381-8575

RHODE ISLAND

Kitchen & Kutchin Associates

87 Cambridge Street

Burlington, MA 01803

(617) 229-2660

SOUTH CAROLINA

Concord Component Reps

10608 Dunhill Terrace

Raleigh, NC 27615

(919) 846-3441

SOUTH DAKOTA

D.A. Case Associates

4620 W. 77th Street

Suite #250

Minneapolis, MN 55435

(612) 831-6777

TENNESSEE

Concord Component Reps

190 Lime Quarry, Suite #102

Madison, AL 35758

(205) 772-8883

TEXAS

Southern States Marketing

400 Anderson Lane

Suite #118

Austin, TX 78752

(512) 835-5822

Southern States Marketing

13831 NW Freeway

Suite #151

Houston, TX 77040

(713) 895-8533

Southern States Marketing

1702 N. Collins Blvd.

Suite #250

Richardson, TX 75080

(214) 238-7500

UTAH

Charles Fields & Associates

103 East 650 North

Bountiful, UT 84010

(801) 299-8228

VERMONT

Kitchen & Kutchin Associates

87 Cambridge Street

Burlington, MA 01803

(617) 229-2660

VIRGINIA

Chesapeake Technology

3905 National Drive

Suite #425

Burtonsville, MD 20866

(301) 236-0530

WASHINGTON

ES/Chase

12025 115th Avenue NE

Suite #200

Kirkland, WA 98034

(206) 823-9535

WEST VIRGINIA

Chesapeake Technology

3905 National Drive

Suite #425

Burtonsville, MD 20866

(301) 236-0530

WISCONSIN

D.A. Case Associates

4620 W. 77th Street

Suite #250

Minneapolis, MN 55435

(612) 831-6777

WYOMING

Technology Sales

1720 South Bellaire Street

Suite #910

Denver, CO 80222

(303) 692-8835

INTERNATIONAL

REPS

AUSTRALIA

ACD

14 Melrich Road, Unit 1

Bayswater, Victoria 3153

+61-3-9762-7644

R&D Electronics

4 Plane Tree Avenue

Dingley, Victoria 3172

+61-3-9558-0444

CANADA

J-Squared Technologies

4170 Still Creek Dr. Suite #200

Burnaby, British Columbia

V5C 6C6

(604) 473-4666

J-Squared Technologies

2723 37th Avenue NE

Suite #206

Calgary, Alberta T1Y 5R8

(403) 291-6755

J-Squared Technologies

300 March Road, Wuite 501

Kanata, Ontario K2K 2E2

(613) 592-9540

J-Squared Technologies

3395 American Dr.

Bldg. 306 Unit 2

Mississauga, Ontario L4V 1T4

(905) 672-2030

J-Squared Technologies

100 Alexis Nihon, Suite #960

St. Laurent, Quebec H4M 4P5

(514) 747-1211

EUROPE

Brit Comp Sales Ltd.

1 Brooklands Road

Weybridge, Surrey

KIT13 0SD England

+44-1932 347077

+44-1932 346256

Munich, Germany

+49-894488496

Athismons, France

+33-1-69387678

interACTIVE

Epos House

263 Heage Road

Ripley, Derbyshire

DE5 3GH England

+44-1773-740263

Ramtec Int’l B.V.

Holland, Spain, Italy

Belgium, Hungary, Russia

+31-2526-21222

HONG KONG

Eastele Technology, Ltd.

A16, 6/F.,

Proficient Ind Centre

6 Wang Kwun Road

Kowloon Bay

+852-2798-8860

INDIA

Priya Electronics

San Jose, CA USA

(408) 954-1866

Satcom Sales and Services

201/2, 2nd Floor,

Azam Complex

Shivam Road, Baghamberpet

Hyderabad 500 013

+91-40-761-4675

ISRAEL

Eldis Technologies

36 Kehilat St.

Herzlia 46382 Israel

+972-9-562-666

JAPAN

Bussan Micro Electronics Corp.

Sowa Gotanda Bldg.

7-18, Higashi Gotanda

2-Chome

Shinagawa-ku, Tokyo 141

+81-3-5421-1730

Rohm Corporation

R&D Division/

Advanced Tech 21-

Saiin Mizosaki-cho Ukyo-ku

Kyoto 615

+81-75-311-2121

KOREA

FM Korea

6th Fl. Bando Bldg.

48-1, Banpo-dong, Seocho-ku

Seoul 137 140 Korea

+822-596-3880

fm@ktnet.co.kr

Woo Young Tech Co., Ltd.

5th Floor Koami Bldg., 13-31

Yoido-dong, Youngdeungpo-ku

Seoul, Korea

+822-369-7099

MALAYSIA

Exertec Pte Ltd.

Blk 1A/14/07 Sunnyville

No. 1 Jalan Batu Uban

Gelugor, Penang 11700 Malaysia

+60-4-657-9592

PUERTO RICO

MEC/Caribe

P.O. Box 5038

Caguas, PR 00726

(787) 746-9897

SINGAPORE

Exertec Pte Ltd.

5 Kallang Sector #04-01

349279 Singapore

+65-749-1349

TAIWAN

ASTL

Room A3, 10th Fl.

No. 58 Sec. 1

Ming-Sheng Road

Taipei, Taiwan R.O.C.

+886-2-521-2363

Golden Way

7F-3, 75, Hsin Tai Wu Road

Sec. 1, His-Chih

Taipei-Hsien Taiwan R.O.C.

+886-2-698-1868 x505

Puteam International

9F-5, 391 Sec. 4 Hsin-Yi Road

Taipei, Taiwan R.O.C.

+886-2-729-0373

SALES OFFICES

HEADQUARTERS

Alliance Semiconductor

San Jose, CA

Tel: (408) 383-4900

Fax: (408) 383-4999

BBS: (408) 383-4994

NORTHEAST AREA

Alliance Semiconductor

Boston, MA

(617) 239-8127

TECHNICAL CENTER

TAIWAN

Alliance Semiconductor

11F, NO.66, Sec. 2

Jang Kuao N. Road

Taipei, Taiwan R.O.C.

Tel:+886-2-516-7995

Fax:+886-2-517-4928

alliance@netra.wow.net.tw

Alliance Semiconductor reserves the right to make changes in this data sheet at any time to improve design and supply the best product possible. Publication of advance information does not constitute a

committment to produce or supply the product described. The company cannot assume responsibility for circuits shown or represent that they are free from patent infringement. Alliance products are not

authorized for use as critical components in life support devices or systems without the express written approval of the president of Alliance. ProMotion® and the Alliance logo are registered trademarks

of Alliance Semiconductor Corporation. All other trademarks are property of their respective holders.

ALLIANCE SEMICONDUCTOR

3099 North First Street San Jose, CA 95134 Tel (408) 383-4900 Fax (408) 383-4999 BBS: (408) 383-4994 www.alsc.com

Representatives and sales offices