&&D D = 6235605 oo1ys.e & BESIEG . sap 14912 Db 7 794-/3 BUZ 213 ___ SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage Ys = 500V Continuous drain current Ih = 865A Drain-source on-resistance Apgin, = 0,6 Q G Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode s Case Plastic package TO 238 AA with insulated metal base plate in accordance with JEDEC, compatible with TO 3; AMP plug-in connections. Approx. weight 21 g be 24791 Type | Ordering code a BUZ 213 | C67078-A1700-A2 Fi si+| if ind i i= 4 I T r | 12 le 8 - Bhi 4,80,6 I via _4 ids af =< 4 Soe + ty D A sn T= a 216 4 301 | | 6,308 38,2 - : Dimensions | Maximum ratings mensrons inn Description Symbols | Ratings ~- Units Conditions Drain-source voltage Vos 500 Vv Drain-gate voltage Vocr 500 Vv Ags = 20 kQ Continuous drain current bh 8,5 A To = 25C Pulsed drain current Tous 34 A To = 25C Gate-source voltage Vas +20 Vv Max. power dissipation Py 83,3 Ww To = 25C Operating and storage q temperature range Tatg 40... 4180 | C Isolation test voltage Vs 3500 Vde"} t =1min DIN humidity category F - DIN 40040 IEC climatic category 40/150/56 DIN IEC 68-1 Thermal resistance Chip - case | Ainuc | <1,5 |) Kw | ) Isolation test voltage between drain and base plate referred to standard climate 23/80 in accordance with DIN 50014. 622 1204 B-09 fod88D) D MM 8235605 0014913 & MESIEG 880 14913 Do T-3BF- v 4 {3 BUZ 213 SIEMENS AKTIENGESELLSCHAF Electrical characteristics (at 7, = 25C unless otherwise specified) . Description Symbol | Characteristics Unit | Conditions min. | typ. | max. Static ratings Drain-source Veryoss | 500 - - Vv Vag = OV breakdown voltage hh =0,25mA Gate threshold voltage Vas (thy 24 30 | 4,0 Vos = Vas hb = mA Zero gate voltage loss - 20 260 HA R= 25C drain current - 100 | 1000 T= 125C Vos = 500V Veg = OV Gate-source leakage Tess - 10 100 nA | %s = 20V current Ys = OV Drain-source Pos on) - 0,55 | 0,6 Q Vag = 10V on-resistance fh = 55A Dynamic ratings Forward Oe 2,7 5,3 - Vos = 25V transconductance h = 5,5A Input capacitance Ciss - 3,8 49 nF Veg = OV Output capacitance Cass - 250 | 400 pF Vos = Ny 4 Reverse transfer Coss - 100 | 170 = IMHz capacitance Turn-on time hb, bs tony ~ 50 7 ns Vog = 30V (fon = fatom + 4) t _ 80 120 Ih = 2,BA Veg = 10V Turn-off time fo fo (ott - 330 =| 430 _ 2 Ags = 502 (fot = taco + 4) t - 110 | 140 Fast-recovery reverse diode Continuous reverse hor - - 8,5 A To = 28C drain current Pulsed reverse drain Toon - - 34 current Diode forward on-voltage Veo - 1,3 1,7 Vv k =2x ha Yas = OV, Fj = 25C Reverse recovery time t, - 180 | 250 ns (= 25C |= ha | 220 | 300 = 150C | d/dt = 100A/us Reserve recovery charge On - 0,65 | 1,2 pc T= 25C Ve = Se r= ~ 26 5,0 = 180C | i00V Repetitive peak reverse Tham - - - A 7 = 25C current _ 15 _ = 160C 623 1205 B-10 rer64) D a23sbos poLyaay tT mESIEG. asp 14914 Do 7 34-+/3 BUZ 213 SIEMENS AKTIENGESELLSCHAF Power dissipation Pp = f(7>) Typical output characteristics fp = f os) parameter: 80 Hs pulse test, q = 25C - 100 18 =83,3W WwW r OA o p 90 0 4% 0 80 14 jBV 70 2 i 60 i 10 50 : 8 40 6 30 4 20 10 2 0 0 0 50 100 C 150 - ae To Safe operating area Ip = f(Vpg) Typical transter characteristic Ip = (Vag) parameter: D = 0.01, 7g = 25C parameter: 80 1s pulse test, Vos = 26V, 7j = 25C 107 A 5 hy fy to 5 10 5 tot 10 5 10 5 10 SV 10 Ns 624 1206 B-1188D D M@@ 8235405 0014915 1 MESTIEG gap 14915 DOT 2 F-/3 BUZ 213 SIEMENS AKTIENGESELLSCHAF Typical drain-source on-state resistance Drain-source on-state resistance Fos (ony fp) As (ony = f(7)) parameter: gg; 7] = 25C parameter: Jp = 5,5A, Veg = 10V (spread) 2,0 15 Rostent 9 Vig 25V 5,5V | 6V 65V Roster 2 45 1,0 1,0 05 0,5 10V | 20V 0 0 0 2 4&4 6 8 10 12 14 16 A 18 . ~ 1, mF Typical transconductance gj, = f (Jp) Gate threshold voltage Vasqn) = (7) parameter: 80 ys pulse test, parameter: Vog = Veg, fp = IMA Vog = 26V, Tj = 26C (spread) 5 Vestn Ns. 4 3 2 i 0 -50 0 50 100) =6C 150 T; 625 1207 B~12 pone88D ) MM AS23505 OOL44h 3 mMSTEG asp 14916 D 7 -39~/3 SIEMENS AKTIENGESELLSCHAF BUZ 213 Typical capacitances C = f(Yps) Continuous drain current J, = (To) parameter: Vgg = 0, f= 1MHz parameter: Vag = 10V 10! nF 5 10 101 2 eo 10 20 30 VO 40 0 50 100 sc 150 = Vos a Forward characteristic of reverse diode Ip = f(ep) parameter: 7), = 80 us (spread) 10 A 5 i= 25C typ. 1 150Ctyp. 10 ie 5 25C (98% 150C (98%) 10 107" 0 6005 6640)COSiSCi2,S O30 626 1208 B-1368D) D MM 8235605 0014917 ma SIEG . sap 14917. 0 77.39 -/3 SIEMENS AKTIENGESELLSCHAF BUZ 213 Transient thermal impedance Zjnic = F(f parameter: D = t,/T as W Zinic 10 5 nul DSoOSS ooo =Prou S W sl 101 10 0 65 10% 65 103) 5 102 5 0S '5 409 s 10! Typlaal gate-charge Vag = f (Qaate) parameter: Ip pyig = 14,44 15 v 0 20 40 60 80 100 nC 120 - Gate 1209 B-14 627 foam