VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 8.7 W Secondary Breakdown Free: 420 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" TO-226AA (TO-92) Device Marking Front View VN3515L S 1 G 2 "S" VN 3515L xxyy VN3515L 3 "S" VN 4012L xxyy Top View "S" = Siliconix Logo xxyy = Date Code D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN3515L VN4012L Drain-Source Voltage VDS 350 400 Gate-Source Voltage VGS "20 "20 0.15 0.16 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C PD 0.09 0.1 0.6 0.65 0.8 0.8 0.32 0.32 Unit V A W RthJA 156 _C/W TJ, Tstg -55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70207 S-04379--Rev. E, 16-Jul-01 www.vishay.com 11-1 VN3515L/VN4012L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN3515L Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 100 mA 420 350 VGS(th) VDS = VGS, ID = 1 mA 1.3 0.6 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "1 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Max VN4012L Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage TJ= 125 _C 800 VGS = 3.5 V, ID = 0.05 A 8.7 VGS = 4.5 V, ID = 0.1 A Drain-Source On-Resistanceb TJ= 125 _C rDS(on) VGS = 4.5 V, ID = 0.15 A TJ= 125 _C Forward Transconductanceb Diode Forward Voltage 0.6 "10 VDS = 0.8 x V(BR)DSS, VGS = 0 V VDS = 10 V, VGS = 4.5 V 400 1.8 1.8 "10 1 1 100 100 150 150 V nA m mA mA 8.7 15 12 15.5 35 30 W 8.7 15.5 gfs VDS = 15 V, ID = 0.1 A 350 VSD IS = 0.1 A, VGS = 0 V 0.8 125 125 mS V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 85 110 110 20 30 30 5 10 10 2.5 20 20 2 20 20 27 65 65 9 65 65 pF Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = 25 V, RL = 250 W ID ^ 0.1 A, VGEN = 10 V RG = 25 W tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDV40 Document Number: 70207 S---Rev. D, 20-Nov-00 VN3515L/VN4012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 500 100 VGS = 2.0 V VGS = 10 V 4.0 V 80 ID - Drain Current (mA) ID - Drain Current (mA) 400 3.0 V 300 2.5 V 200 2.0 V 60 1.8 V 40 1.6 V 20 100 1.4 V 0 0 0 1 2 3 4 5 0 0.4 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 1.6 2.0 12 VDS = 15 V 11 rDS(on) - On-Resistance ( ) 160 ID - Drain Current (mA) 1.2 On-Resistance vs. Gate-to-Source Voltage 200 120 80 TJ = 125_C 40 -55_C 25_C 10 9 ID = 100 mA 8 20 mA 7 6 5 0 0 1 2 3 4 0 5 4 VGS - Gate-Source Voltage (V) 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 13 rDS(on) - Drain-Source On-Resistance ( ) 0.8 VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 12 11 10 9 8 2.25 ID = 0.02 A VGS = 4.5 V 2.00 ID = 0.1 A 1.75 1.50 1.25 1.00 0.75 0.50 0 0.2 0.4 ID - Drain Current (A) Document Number: 70207 S---Rev. D, 20-Nov-00 0.6 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) www.vishay.com 11-3 VN3515L/VN4012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 300 VDS = 10 V VGS = 0 V f = 1 MHz C - Capacitance (pF) ID - Drain Current (mA) 250 1.0 TJ = 150_C 0.1 25_C 200 150 100 Ciss 50 125_C Coss C rss -55_C 0.01 0 0 0.5 1.0 0 1.5 VGS - Gate-to-Source Voltage (V) 10 20 30 Gate Charge Load Condition Effects on Switching 100 3 VDS = 200 V VDD = 25 V RG = 25 W VGS = 0 to 10 V ID = 0.1 A t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) 50 40 VDS - Drain-to-Source Voltage (V) 2 320 V 1 td(off) 10 tf tr td(on) 1 10 0 0 200 400 600 800 1000 100 1000 ID - Drain Current (A) Qg - Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.5 0.2 0.2 0.1 Notes: 0.05 0.1 PDM 0.02 t1 0.05 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 0.1 0.5 1.0 5 10 50 100 500 1K 5K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70207 S---Rev. D, 20-Nov-00 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1