K3010P(G) Series Vishay Semiconductors Optocoupler with Phototriac Output Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Monitors, air conditioners, line switches, solid state relays, microwaves. ~ ~ 6 5 4 1 2 3 These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler for electrical safety requirements 95 10812 VDE Standards A (+) C (-) nc Note: Pin 5 must not be connected D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking K3010P/ K3010PG1) < 15 mA 1) K3011P/ K3011PG < 10 mA K3012P/ K3012PG1) < 5 mA 1) G = Leadform 10.16 mm; G is not marked on the body Document Number 83504 Rev. A4, 13-Sep-99 Remarks www.vishay.de * FaxBack +1-408-970-5600 1 (9) K3010P(G) Series Vishay Semiconductors Features D Rated recurring peak voltage (repetitive) Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12398 VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D VDE 0884, Certificate number 94778 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Isolation materials according to UL 94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D IFT offered in 3 groups D Coupling System C Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp 10 ms Tamb 25C Symbol VR IF IFSM PV Tj Value 5 80 3 100 100 Unit V mA A mW C Symbol VDRM ITRMS ITMS PV Tj Value 250 100 1.5 300 100 Unit V mA A mW C Symbol VIO 1) Ptot Tamb Tstg Tsd Value 3.75 350 -40 to +85 -55 to +100 260 Unit kV mW C C C Output (Detector) Parameter Test Conditions Off state output terminal voltage On state RMS current Peak surge current, non-repetitive tp 10 ms Power dissipation Tamb 25C Junction temperature Coupler Parameter Test Conditions Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb 25C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 www.vishay.de * FaxBack +1-408-970-5600 2 (9) Document Number 83504 Rev. A4, 13-Sep-99 K3010P(G) Series Vishay Semiconductors Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IDRM = 100 nA Symbol VDRM 1) Min. 250 Typ. Max. Unit V ITM = 100 mA IFT = 0, IFT = 30 mA VTM (dv/dt)cr (dv/dt)crq 1.5 10 0.2 3 V V/ms V/ms Max. 15 10 5 Unit mA mA mA A Output (Detector) Parameter Forward peak off-state voltage (repetitive) Peak on-state voltage Critical rate of rise of off-state voltage 1) 0.1 Test voltage must be applied within dv/dt ratings Coupler Parameter Emitting g diode trigger gg current Test Conditions VS = 3 V, RL = 150 W Type K3010P(G) K3011P(G) K3012P(G) Holding current IF = 10 mA, VS 3 V Note: IFT is defined as a minimum trigger current Symbol IFT IFT IFT IH RS V~ IFT RL Min. Typ. 8 5 2 100 m Test condition: dv/dtcr VS = 2/3 VDRM (Sine wave) RL = 33 k dv/dtcrq Veff = 30 V (Sine wave) RL = 2 k 95 10813 Figure 1. Test circuit for dv/dtcr and dv/dtcrp Document Number 83504 Rev. A4, 13-Sep-99 www.vishay.de * FaxBack +1-408-970-5600 3 (9) K3010P(G) Series Vishay Semiconductors IF yI FT 95 10814 IF = 0 dv / dtcrq dv / dtcr dv/dtcr Highest value of the "rate of rise of off-state voltage" which does not cause any switching from the off-state to the on-state dv/dtcrq Highest value of the "rate of rise of communicating voltage" which does not switch on the device again, after the voltage has decreased to zero and the trigger current is switched from IFT to zero Figure 2. 270 +5 V M 0.1 F VAC ~ TTL Galvanical separation 95 10815 Figure 3. Motor control circuit www.vishay.de * FaxBack +1-408-970-5600 4 (9) Document Number 83504 Rev. A4, 13-Sep-99 K3010P(G) Series Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 4 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb 25C Symbol Psi Value 600 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Partial discharge g test voltage g - Routine test Test Conditions 100%, ttest = 1 s Partial discharge test voltage - Lot test (sample test) Insulation resistance tTr = 60 s, ttest = 10 s, (see figure 5) VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C Symbol Vpd VIOTM Vpd Min. 1.6 6 1.3 Typ. Max. Unit kV kV kV RIO RIO 1012 1011 W W RIO 109 W (construction test only) VIOTM 675 600 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Psi (mW) 525 450 VPd 375 VIOWM VIORM 300 225 Isi (mA) 150 75 0 0 0 25 50 75 100 125 Tamb ( C ) 95 10925 Figure 4. Derating diagram Document Number 83504 Rev. A4, 13-Sep-99 150 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres t Figure 5. Test pulse diagram for sample test according to DIN VDE 0884 www.vishay.de * FaxBack +1-408-970-5600 5 (9) K3010P(G) Series Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1.5 VTMrel - Relative On-State Voltage P tot - Total Power Dissipation ( mW ) 400 Coupled device 300 Phototransistor 200 IR-diode 100 0 0 20 40 60 80 Figure 6. Total Power Dissipation vs. Ambient Temperature 1.1 1.0 0.9 0.8 0.7 0.6 100 100.0 10.0 1.0 VDR=100V IF=0 10 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 96 11924 Figure 10. Off - State Current vs. Ambient Temperature 1.5 250 1.4 200 VS=3V RL=150 1.2 W 1.1 1.0 0.9 0.8 0.7 ITM - On-State Current ( mA ) I FTrel - Relative Threshold Forward Current Figure 7. Forward Current vs. Forward Voltage 1.3 Tamb - Ambient Temperature ( C ) Figure 9. Relative On - State vs. Ambient Temperature I DRM - Off-State Current ( nA ) I F - Forward Current ( mA ) 1.2 96 11923 1000.0 96 11862 IF IFT IT=100mA 1.3 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 100 Tamb - Ambient Temperature ( C ) 96 11701 w 1.4 150 100 IFT=15mA 50 0 -50 -100 -150 0.6 -200 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 -250 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 96 11922 Tamb - Ambient Temperature ( C ) Figure 8. Relative Threshold Forward Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 6 (9) 96 11925 VTM - On-State Voltage ( V ) Figure 11. On - State Current vs. Ambient Temperature Document Number 83504 Rev. A4, 13-Sep-99 K3010P(G) Series Vishay Semiconductors Type Date Code (YM) XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 12. Marking example Dimensions of K301.PG in mm 14771 Document Number 83504 Rev. A4, 13-Sep-99 www.vishay.de * FaxBack +1-408-970-5600 7 (9) K3010P(G) Series Vishay Semiconductors Dimensions of K301.P in mm 14770 www.vishay.de * FaxBack +1-408-970-5600 8 (9) Document Number 83504 Rev. A4, 13-Sep-99 K3010P(G) Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 83504 Rev. A4, 13-Sep-99 www.vishay.de * FaxBack +1-408-970-5600 9 (9)