Preliminary Data Sheet FP2250QFN
PACKAGED LOW NOISE, HIGH LINEARITY PHEMT
Phone: (408) 988-1845 http:// www.filss.com Revised: 10/18/02
Fax: (408) 970-9950 Email: sales@filss.com
• FEATURES
♦ 29 dBm Output Power at 1-dB Compression
♦ 17 dB Power Gain at 2 GHz
♦ 1.0 dB Noise Figure at 2 GHz
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium
Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electron-
beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source
and gate resistance. The epitaxial structure and processing have been optimized for reliable high-
power applications. The FP2250’s active areas are passivated with Si3N4, and the QFN package is
ideal for low-cost, high-performance applications that require a surface-mount package. Typical
applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,
and other types of wireless infrastructure systems up to 10 GHz.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter Symbol Test Conditions Min Typ Max Units
IDSS VDS = 2 V; VGS = 0 V
560 635 705 mA
Saturated Drain-Source Current
FP2250QFN-1
FP2250QFN-2 706 770 850 mA
Power at 1-dB Compression P-1dB VDS = 5 V; IDS = 50% IDSS 27 29 dBm
Power Gain at 1-dB Compression G-1dB VDS = 5 V; IDS = 50% IDSS 16 17 dB
Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS 50 %
Noise Figure NF VDS = 5 V; IDS = 50% IDSS 1.0 dB
Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 50% IDSS 42 dBm
Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 840 mA
Transconductance GMVDS = 2 V; VGS = 0 V 550 mS
Gate-Source Leakage Current IGSO VGS = -5 V 115 µA
Pinch-Off Voltage VPVDS = 2 V; IDS = 11 mA -2.0 -0.25 V
Gate-Source Breakdown
Voltage Magnitude
VBDGS IGS = 11 mA -10 -12 V
Gate-Drain Breakdown
Voltage Magnitude
VBDGD IGD = 11 mA -10 -12 V
All RF data tested at 2.0 GHz
Preliminary Data Sheet FP2250QFN
PACKAGED LOW NOISE, HIGH LINEARITY PHEMT
Phone: (408) 988-1845 http:// www.filss.com Revised: 10/18/02
Fax: (408) 970-9950 Email: sales@filss.com
• ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS TAmbient = 22 ± 3 °C6V
Gate-Source Voltage VGS TAmbient = 22 ± 3 °C-3 V
Drain-Source Current IDS TAmbient = 22 ± 3 °CIDSS mA
Gate Current IGTAmbient = 22 ± 3 °C15 mA
RF Input Power PIN TAmbient = 22 ± 3 °C500 mW
Channel Operating Temperature TCH TAmbient = 22 ± 3 °C175 ºC
Storage Temperature TSTG —-65175ºC
Total Power Dissipation PTOT TAmbient = 22 ± 3 °C3.75 W
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 3.75W – (0.025W/°C) x TPACK
where TPACK = source tab lead temperature. (Bottom of the Package)
• This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
• PCB PAD LAYOUT
Preliminary Data Sheet FP2250QFN
PACKAGED LOW NOISE, HIGH LINEARITY PHEMT
Phone: (408) 988-1845 http:// www.filss.com Revised: 10/18/02
Fax: (408) 970-9950 Email: sales@filss.com
• PACKAGE OUTLINE
MBC
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
• APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.