fiAMOSPEC HIGH-POWER NPN SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 105W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SA1386 & 2SA1386A MAXIMUM RATINGS NPN 2SC3519 2SC3519A 15 AMPERE SILICON POWER TRANASISTOR 160 -180 VOLTS 130 WATTS Characteristic Symbol | 2SC3519 2SC3519A Unit Collector-Emitter Voltage Veco 160 180 Vv Collector-Base Voltage Vepo 160 180 Vv Emitter-Base Voltage Vv, 5.0 V 8 EBO TO-247(3P) Collector Current - Continuous le 15 A - Peak lom 20 2 Me 0. Base current lp 4.0 A i 1 L, Total Power Dissipation @T, = 25C Pp 130 Ww "les TE Derate above 25C 1.04 wrc Operating and Storage Junction Ty .Tst C H Fo Li Temperature Range -55 to +150 \ | | 7 Pp I THERMAL CHARACTERISTICS PIN 1.BASE 2.COLLECTOR Characteristic Symbol Max Unit 3-EMITTER Thermal Resistance Junction to Case} Rdjc 0.961 CW DIM MILLIMETERS MIN MAX A 20.63 | 2238 150 FIGURE -1 POWER DERATING B 1538 | 1620 c 1.90 2.70 a D 5.10 6.10 pi E | 1481 | 15.22 F 11.72 | 12.84 = 100 G | 420 | 450 2 H 182 | 246 a 75 292 | 3.23 3 J 089 | 153 e K | 526 | 5.66 3 L 18.50 | 21.50 2 M 468 5.36 3 N 240 | 280 . 60 oO 3.25 3.65 0 2 50 7 100 125 150 P oss | 070 Te , TEMPERATURE(?C)28C3519, 2SC3519A NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Vieryceo v (Ig= 25 mA, Ip= 0 ) 2803519 160 2SC3519A 180 Collector Cutoff Current lego uA ( Vog= 160 V, I= 0) 2803519 100 ( Veg= 180 V, I-= 0) 28C3519A 100 Emitter Cutoff Current leso uA ( Veg= 5.0 V, I= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (l= 5.0 A, Veg= 4.0 V) hFE 50 Collector-Emitter Saturation Voltage VcE{sat) Vv (I_= 5.0 A, I,= 500 mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy MHz (Ig = 2.0A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Vec= 40 V,I_= 10A ton 0.20(typ) us Storage Time Ipi= ~lpa= 1.0A t, 1.30(typ) us R,= 4 ohm Fall Time ty 0.45(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SC3519/A NPN 2 PP TO ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a fransistoraverage junction temperature and second breakdown. safe operating area curves indicate = [e-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves. indicate. The data of SOA curve is base on Tpiq=150C:T is variable depending on conditions. second breakcown pulse limits are valid for duty cycles to 10% provided: 30 20 fe, COLLECTOR CURRENT (Amp.) o muLee. pare WE Tupasi50C,At high case temperatures, thermal limita - 0.3+ CURVES MUST BE tion will reduce the power that can be handied to values LINEARLY WITH INCREASE imitatinns: i N ERATURE iess than the limitations imposed by second breakdown. at 5.0 10. 20 30 50 400 200 Vee , COLLECTOR EMITTER (VOLTS) DC CURRENT GAIN Ic - Vee 16 Fo2t26C a NH 3 hee , DG CURRENT GAIN Ic , COLLECTOR CURRENT (A) o Q 002 0605 Of 02 0.5 10 26 0 we 20 0 1.0 2.0 3.0 4.0 le, COLLECTOR CURRENT (AMP) Vee. COLLECTOR-EMITTER VOLTAGE (V) VCE(sat)-ls fr-le COMMON EMITTER 60 . 2, To=28C Wy Voez12V L LAT yl N a = 20 fr, TRANSITION FREQUENCY (MHz) NW Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) \ Qa 0 0.02 005 (0.1 a2 0.5 1.0 2.0 5.0 10 Ic, COLLECTOR CURRENT (A) 0.2 0.4 06 0.8 1.0 ls , BASE CURRENT (A) a