2SD882
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=10mAdc, IB=0)
30 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
40 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
6.0 --- Adc
I
CBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
--- 1.0 uAdc
ICEO Collector Cutoff Current
(V CE=30Vdc, I
B=0)
--- 1.0 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, I
C=0)
--- 1.0 uAdc
ON CHARACTERISTICS
hFE -1 DC Current Gain
(I
C=1.0Adc, VCE=2.0Vdc)
60 400 ---
hFE -2 DC Current Gain
(I
C=100mAdc, VCE=2.0Vdc)
32 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=2.0Adc, IB=0.2Adc)
--- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=2.0Adc, IB=0.2Adc)
--- 2.0 Vdc
fT Transition Frequency
(VCE=5.0Vdc, IC=0.1Adc, f=10MHz)
50 --- MHz
CLASSIFICATION OF HFE
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
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    
  
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    
    
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    
    
  
 
    
   
!    
E
A
D
F
G
H
J J
C
B
L
M
P
Q
N
R
K
PIN 1. EMITTER
PIN 2. COLLECTOR
12 3
PIN 3. BASE
Revision: 4 2007/03/01
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
www.mccsemi.com
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xCase Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
2SD882-R
2SD882-O
2SD882-Y
2SD882-GR
MCC
Revision: 4 2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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