D2009UK
Document Number 5535
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage *
BVGSS Gate – Source Breakdown Voltage *
ID(sat) Drain Current *
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
58W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
C
A
O
NMK
J
I
H
G
F
E
D
B
1
54
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 16.38 0.26 0.645 0.010
B 1.52 0.13 0.060 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.250 0.005
E 3.30 0.13 0.130 0.005
F 14.22 0.13 0.560 0.005
G 1.27 x 45° 0.13 0.05 x 45° 0.005
H 1.52 0.13 0.060 0.005
I 6.35 0.13 0.250 0.005
J 0.13 0.02 0.005 0.001
K 2.16 0.13 0.085 0.005
M 1.52 0.13 0.060 0.005
N 5.08 MAX 0.200 MAX
O 18.90 0.13 0.744 0.005
DQ
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
* Per Side
ROHS COMPLIANT
D2009UK
Document Number 5535
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
65
2
1
17
0.36
10
40
20:1
24
12
1
VGS = 0 ID= 10mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 2A
PO= 10W
VDS = 28V IDQ = 0.4A
f = 1GHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
μA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 3.0°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤2%
TOTAL DEVICE
PER SIDE
PER SIDE
BVDSS
IDSS
IGSS
VGS(th)
gfs
GPS
η
VSWR
Ciss
Coss
Crss
