Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Mar. 2002
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX 4.5
2.5 2.5
0.8
1.0
φ3.6±0.2
1.3
0.5 2.6
12.5 MIN
3.8 MAX 16 MAX
7.0
3.2±0.2
4.5
231
4
∗
24
1
3
1
2
3
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-220
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CM
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
•I
T (RMS) ......................................................................10A
•V
DRM ....................................................................... 600V
•I
FGT !, IRGT !, IRGT #............................................20mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
✽1.Gate open.
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=15A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3 ✽4
Tj=125°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
1.8
—
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10023 5710
1
40
30
20
10
23 5710
2
44
50
60
70
80
90
100
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
Tj = 125°C
Tj = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽5
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
32
24
20
12
4
016820 4 6 10 12 14
8
16
28
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
IFGT I
IRGT I, IRGT III
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
160
120
100
60
20
016820 4 6 10 12 14
40
80
140
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGM = 10V
VGT = 1.5V
IRGT I IFGT I, IRGT III VGD = 0.2V
IGM = 2A
PGM = 5W
PG(AV) =
0.5W
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
2310
–1
5710
0
23 5710
1
23 5710
2
2310
2
5710
3
1.0
2
TYPICAL EXAMPLE
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
160
120
100
60
20
03.21.60 0.8 1.2 2.0 2.4 2.8
40
80
140
0.4
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
14040–40–60 –20 0 20 60 80 100120
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 140–40 0 40 80 120
160
120
100
60
20
016820 4 6 10 12 14
40
80
140
60 60 t2.3
120 120 t2.3
100 100 t2.3
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
TYPICAL EXAMPLE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
T
2
+
, G
+
T
2
–
, G
–
T
2
+
, G
–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
2310
0
5710
1
23 5710
2
7
5
3
2
10
1
7
7
5
3
2
10
0
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
Tj = 125°C
I QUADRANT
III QUADRANT
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
Mar. 2002
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX 4.5
2.5 2.5
0.8
1.0
φ3.6±0.2
1.3
0.5 2.6
12.5 MIN
3.8 MAX 16 MAX
7.0
3.2±0.2
4.5
231
4
∗
24
1
3
1
2
3
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-220
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CM
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
•IT (RMS) ......................................................................10A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT #............................................20mA
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=128°C ✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +150
–40 ~ +150
2.0
✽1.Gate open.
The product guaranteed maximum junction
temperature 150°C (See warning.)
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
✽5.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–5.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=150°C, VDRM applied
Tc=25°C, ITM=15A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽3 ✽4
Tj=125°C/150°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
1.8
—
PERFORMANCE CURVES
The product guaranteed maximum junction
temperature 150°C (See warning.)
1.5 2.5 3.51.00.5 2.0 3.0 4.0
102
7
5
3
2
101
7
5
7
5
3
2
100T
j
= 25°C
T
j
= 150°C
10023 5710
1
40
30
20
10
23 5710
2
44
50
60
70
80
90
100
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽5
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
0
2310
1
5710
2
23 5710
3
23 5710
4
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
VGD = 0.1V
PGM = 5W
VGM = 10V
VGT = 1.5V IGM = 2A
I
RGT I
IFGT I, IRGT III
PG(AV) =
0.5W
10
2
5
10
1
7
2
3
10
3
5
7
2
3
–60 –20 20 60 100 160140–40 0 40 80 120
IFGT I
IRGT I, IRGT III
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
2.2
2.4
0
2.0
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0.8
2310
–1
5710
0
23 5710
1
23 5710
2
2310
2
5710
3
1.0
2
32
24
20
12
4
016820 4 6 10 12 14
8
16
28
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
TYPICAL EXAMPLE
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
160
120
100
60
20
03.20 0.4 1.2 2.0 2.8
40
80
140
0.8 1.6 2.4
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
–60 –20 20 60 100 140160–40 0 40 80 120
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–40 0 40 80 120
100 100 t2.3
60 60 t2.3
120 120 t2.3
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
TYPICAL EXAMPLE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
T2
+
, G
+
T2
–
, G
–
T2
+
, G
–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLYREGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
NO FINS,CURVES
APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
III QUADRANT
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 150°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
T
j
= 150°C
I QUADRANT
III QUADRANT
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(T
j
= 125°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
I QUADRANT
III QUADRANT
COMMUTATION CHARACTERISTICS
(T
j
= 150°C)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 150°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
VD
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
C1
C1 = 0.1~0.47µF
R1 = 47~100ΩC0 = 0.1µF
R0 = 100Ω
C0R0
R1
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
