FLM1011-8F X, Ku-Band Internally Matched FET FEATURES * * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 3400 5200 mA Transconductance gm VDS = 5V, IDS = 2200mA - 3400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0 V IGS = -170A -5.0 - - V 38.5 39.0 - dBm 6.0 7.0 - dB - 2200 2600 mA - 29 - % - - 0.6 dB -44 -46 - dBc Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr add VDS = 10V f = 10.7 ~ 11.7 GHz IDS 0.65 IDSS(Typ.) ZS = ZL = 50 Gain Flatness G 3rd Order Intermodulation Distortion IM3 f = 11.7GHz, f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 3.5 C/W 10V x Idsr x Rth - - 80 C Channel Temperature Rise Tch CASE STYLE: IB Edition 1.2 August 1999 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1011-8F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER POWER DERATING CURVE VDS=10V Output Power (S.C.L.) (dBc) 30 20 10 0 50 100 150 31 f2 = 11.71 GHz 2-tone test Output Power (dBm) Output Power (dBm) 29dBm 36 27dBm 11.2 11.45 -40 -50 23 39 38 10.95 IM3 18 20 22 24 OUTPUT POWER vs. INPUT POWER 31dBm 10.7 -30 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Pin=33dBm 35 27 16 39 37 -20 200 OUTPUT POWER vs. FREQUENCY VDS=10V P1dB 29 25 Case Temperature (C) 40 Pout IM3 (dBc) 40 33 f1 = 11.7 GHz VDS=10V f = 11.2 GHz 37 Pout 35 33 30 31 add 29 15 23 11.7 25 27 29 31 33 Input Power (dBm) Frequency (GHz) 2 add (%) Total Power Dissipation (W) 50 FLM1011-8F X, Ku-Band Internally Matched FET S11 S22 +j50 S21 S12 +90 +j100 +j25 10.7 11.7 +j10 11.5 11.1 10.5 GHz 11.3 10.9 10.5 GHz +j250 11.9 10.7 10.9 10.5 GHz 11.3 11.1 11.9 11.3 10 11.1 50 10.9 11.3 3 2 1 11.7 -j250 -j100 11.7 11.9 0.1 11.9 0.2 -j50 FREQUENCY (MHZ) 0 11.5 11.5 11.1 10.5 GHz -j25 4 SCALE FOR |S21| 10.9 11.5 10.7 -j10 180 10.7 11.7 SCALE FOR |S12| 0 -90 S11 S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG MAG ANG 10500 .638 13.3 2.349 110.3 .066 10600 .630 5.4 2.376 100.3 10700 .617 -2.6 2.410 10800 .597 -10.6 10900 .570 11000 S22 MAG ANG 93.2 .386 -83.3 .071 83.2 .358 -93.7 89.8 .074 73.3 .326 -106.9 2.446 78.9 .076 63.9 .299 -122.1 -18.9 2.476 68.3 .081 53.1 .283 -140.5 .539 -27.5 2.513 57.0 .082 43.1 .282 -161.2 11100 .498 -36.2 2.544 45.3 .083 32.6 .297 179.1 11200 .449 -45.8 2.563 33.5 .087 22.7 .324 161.1 11300 .397 -55.9 2.565 21.5 .088 12.3 .356 146.0 11400 .337 -67.2 2.561 9.2 .090 0.3 .386 133.2 11500 .276 -80.6 2.548 -2.8 .090 -10.3 .411 122.1 11600 .217 -97.8 2.528 -14.9 .089 -21.7 .425 112.3 11700 .167 -124.5 2.519 -27.2 .093 -32.9 .429 103.1 11800 .143 -162.8 2.509 -39.7 .090 -44.9 .419 94.1 11900 .168 157.8 2.502 -52.6 .093 -57.6 .399 84.4 Download S-Parameters, click here 3 FLM1011-8F X, Ku-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 2 12.90.2 (0.508) 2-R 1.60.15 (0.063) 3 2.60.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.00.15 (0.669) 21.00.15 (0.827) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4