High Power Bipolar Transistors Tip Series Features: * Collector-Emitter sustaining voltage= 60 V (Minimum) - TIP29A, TIP30A VCEO (sus) = 100 V (Minimum) - TIP29C, TIP30C Collector-Emitter saturation voltage= 0.7 V (Maximum) at IC = 1 A VCE (sat) Current gain-bandwidth product fT = 3 MHz (Minimum) at IC = 200 mA * * Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 NPN PNP TIP29A TIP30A TIP29C TIP30C 1A Complementary Silicon Power Transistors 40 - 100 V 30 W TO-220 Dimensions : Millimetres Maximum Ratings Characteristic Symbol TIP29A TIP30A TIP29C TIP30C 60 100 Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5 Collector Current-Continuous - Peak IC 1 3 Base Current IB 0.4 Total Power Dissipation at TC = 25C Derate above 25C PD 30 0.24 W W / C TJ, TSTG -65 to +150 C Operating and Storage Junction Temperature Range V A www.element14.com www.farnell.com www.newark.com Page <1> 16/06/12 V1.1 High Power Bipolar Transistors Tip Series Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rjc 4.167 C / W PD, Power Dissipation (W) Figure - 1 Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit VCEO (sus) 60 100 - V OFF Characteristics Collector-Emitter Sustaining Voltage (1) TIP29A, TIP30A (IC = 30 mA, IB = 0) TIP29C, TIP30C Collector Cut off Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) TIP29A, TIP30A TIP29C, TIP30C ICEO - 0.3 Collector Cut off Current (VCE = 60 V, VEB = 0) (VCE = 100 V, VEB = 0) TIP29A, TIP30A TIP29C, TIP30C ICES - 0.2 IEBO - 1 hFE 40 15 75 Collector-Emitter Saturation Voltage (IC = 1 A, IB = 125 mA) VCE (sat) - 0.7 Base-Emitter On Voltage (IC = 1 A, VCE = 4 V) VBE (on) - 1.3 Emitter Cut off Current (VEB = 5 V, IC = 0) mA ON Characteristics (1) DC Current Gain (IC = 0.2 A, VCE = 4 V) (IC = 1 A, VCE = 4 V) - V www.element14.com www.farnell.com www.newark.com Page <2> 16/06/12 V1.1 High Power Bipolar Transistors Tip Series Characteristic Symbol Minimum Maximum Unit Current Gain-Bandwidth Product (2) (IC = 200 mA, VCE = 10 V, f = 1 MHz) fT 3 - MHz Small Signal Current Gain (IC = 200 mA, VCE = 10 V, f = 1 kHz) hfe 20 - - Dynamic Characteristics (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2% (2) fT = | hFE | * fTest Figure - 3 Switching Time Equivalent Circuit t, Time (s) Figure - 2 Turn-On Time IC, Collector Current (A) RB and RC Varied to Obtain Desired Current Levels Figure - 5 Turn-Off Time s) t, Time ( hFE, DC Current Gain Figure - 4 DC Current Gain IC, Collector Current (A) IC, Collector Current (A) www.element14.com www.farnell.com www.newark.com Page <3> 16/06/12 V1.1 High Power Bipolar Transistors Tip Series Figure - 6 Active Region Safe Operating Area IC, Collector Current (A) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate The data of figure - 6 curve is based on TJ (PK) = 150C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) =150C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown V CE, Collector Emitter Voltage (V) Specification Table Type NPN PNP Part Number TIP29A TIP29C TIP30A TIP30C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 16/06/12 V1.1