1310nm DFB LD Module
ALD-040XX/ALD-041XX
No. 8, Jingwu Road
Ding Mao Development Zone
Zhenjiang 212009, China
Tel: (86)511-8885688(5088) Fax: (86)511-8889135
Email: sales@allrayinc.com, marketing@allrayinc.com
Features
a. InGaAsP/InP MQW DFB LD
b. Low Threshold Current
c. High Reliability
d. High Output Power
e. Built-in Optical Isolator
Applications
a. Data Communication
b. Video Transmission
c. CATV System
Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit
LD Forward Current If(LD) - Ith+40mA(DC) mA
LD Reverse Voltage Vr(LD) - 2 V
PD Forward Current If(PD) - 2 mA
PD Reverse Voltage Vr(PD) - 20 V
Operating Temperature Top -40 85 ℃
Storage Temperature Tstg -40 100 ℃
Soldering Temperature, Time - -
260 , 10 S℃ ,S℃
Optical and Electrical Characteristics (T=25 )℃
Parameter Symbol Min. Typ. Max. Unit Test Condition
Center Wavelength λc 1290 1310 1330 nm -
Output Power Po 0.2 - - mW CW, If = Ith+20mA
Threshold Current Ith - 10 30 mA -
Operating Voltage Vop - 1.1 1.8 V If = Ith+20mA
Rise/Fall Time tr/tf - 0.2 0.4 ns 10~90%
Spectral Width(-20dB) λ△ - - 1 nm -
Side Mode Suppression Ratio SMSR 30 40 - dB -
Monitor Current Im - 0.2 - mA If = Ith+20mA
Optical Isolation Iso 30 - - dB -