HEXFET power mosrFets TO-220AB Logic-level HEXFETs are fully-enhanced with 4 or 5V applied to the gate. TO-220AB Logic Level N-Channel international [reriRectifier V(BR. Drate aesice Rison) Ip Continuous | Ip Continuous | RinycMax | Py@T, = 25C) Case Part Breakdown On-State |Drain Current | Drain Current | Thermal Max Power | Outline Number Voltage Resistance 25C 100C Resistance | Dissipation | Number Case Style (Volt) (Ohms) (Amps) (Amps) (CW) (Waits) (1) IRL2203 30 0.010 (2) 92 65 1.0 150 H12 | T0-220AB IRL3705 50 0.012 (2) 80 57 1.0 150 IRLZ14 60 0.20 10 7.2 3.5 43 ESN IRLZ24 60 0.10 17 12 25 60 IRLZ34 60 0.050 30 21 17 88 IRLZ44 60 0.028 50 36 1.01 150 IRL510 100 0.54 5.6 40 3.5 43 IRL520 100 0.27 9.2 6.5 2.5 60 IRL530 100 0.16 16 it 17 88 IRL540 100 0.077 28 20 1.0 150 TO-220AB P-Channel V(BR)pss Drain-to-Source Ros(on) Ip Continuous {tp Continuous | RipycMax | Py@T, = 25C) Case Part Breakdown On-State | Drain Current | Drain Current} Thermal Max Power | Outline Number Voltage Resistance 25C 100C Resistance | Dissipation | Number Case Style (Volt) (Ohms) (Amps) (Amps) (c/w) (Watts) (1) IRF9Z14 -60 0.50 67 47 3.5 43 H12 | T0-220AB IRF9Z24 -60 0.28 11 77 25 60 S IRF9Z34 -60 0.14 -18 -13 17 88 IRF9510 -100 1.2 -4.0 -2.8 3.5 43 IRF9520 -100 0.60 -6.8 -4.8 2.5 60 IRF9530 -100 0.30 -12 -B.2 1.7 88 IRF9540 -100 0.20 -19 -13 1.0 150 IRF9610 -200 3.0 -1.8 -1.0 64 20 IRF9620 -200 1.5 3.5 -2.0 3.1 40 IRF9630 -200 0.80 6.5 -4.0 17 74 IRF9640 -200 0.50 11 6.8 1.0 125 Part number in bold indicates new product. (1) For case outline drawing see page 0-2. (2) Ros (on) Specified at Vgg = 10V F-14