AP4224GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D2 Simple Drive Requirement D2 D1 D1 Dual N MOSFET Package BVDSS 30V RDS(ON) 14m ID 10A G2 S2 RoHS Compliant SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V 20 V 3 10 A 3 8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 30 A PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 /W 200623051-1/4 AP4224GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.03 - V/ VGS=10V, ID=10A - - 14 m VGS=4.5V, ID=7A - - 20 m VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=10V, ID=10A - 16 - S o VDS=30V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=10A - 23 35 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 - nC VDS=15V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 34 - ns tf Fall Time RD=15 - 16 - ns Ciss Input Capacitance VGS=0V - 1910 3070 pF Coss Output Capacitance VDS=25V - 400 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 0.9 - Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on min. copper pad. 2/4 AP4224GM 180 140 T A = 25 o C o 10V 7.0V 10V 7.0V T A = 150 C 120 100 ID , Drain Current (A) ID , Drain Current (A) 150 120 90 5.0V 60 4.5V 30 80 5.0V 60 4.5V 40 V G = 3 .0V 20 V G = 3 .0V 0 0 0 1 2 3 4 0 5 1 Fig 1. Typical Output Characteristics 3 4 Fig 2. Typical Output Characteristics 20 1.8 ID=7A T A =25 18 I D =1 0 A V G =10V 1.6 Normalized RDS(ON) 16 RDS(ON) (m) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 14 12 1.4 1.2 1.0 0.8 10 0.6 8 3 5 7 9 -50 11 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3.0 10 8 2.5 IS(A) VGS(th) (V) 6 o o T j =150 C 4 T j =25 C 2.0 1.5 2 1.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4224GM f=1.0MHz 10000 16 V DS =15V V DS =20V V DS =24V 12 C iss C (pF) VGS , Gate to Source Voltage (V) ID=10A 8 1000 C oss C rss 4 100 0 0 10 20 30 40 1 50 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10ms 1 100ms 0.1 1s T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 135/W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4