Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 14mΩ
▼ Dual N MOSFET Package ID10A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 62.5 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Storage Temperature Range
Continuous Drain Current38
Pulsed Drain Current130
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
200623051-1/4
AP4224GM
Rating
30
±20
10
S1 G1 S2G2
D1 D1 D2 D2
SO-8
G2
D2
S2
G1
D1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=10A - - 14 mΩ
VGS=4.5V, ID=7A - - 20 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=10A - 16 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - nA
QgTotal Gate Charge2ID=10A - 23 35 nC
Qgs Gate-Source Charge VDS=24V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 - nC
td(on) Turn-on Delay Time2VDS=15V - 12 - ns
trRise Time ID=1A - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 34 - ns
tfFall Time RD=15Ω-16-ns
Ciss Input Capacitance VGS=0V - 1910 3070 pF
Coss Output Capacitance VDS=25V - 400 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF
RgGate Resistance f=1.0MHz - 0.9 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.7A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 24 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
2/4
AP4224GM
±100
AP4224GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0
30
60
90
120
150
180
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
20
40
60
80
100
120
140
01234
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
8
10
12
14
16
18
20
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=7A
TA=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=10A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP4224GM
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
16
0 1020304050
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
VDS =20V
VDS =24V
ID=10A
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
tT
0.02