IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max * Lowest figure-of-merit R ON x Qg 650 0.385 R DS(on),max * Ultra low gate charge V Q g,typ 17 nC * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications PG-TO262 * Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: * Hard switching SMPS topologies Type Package Ordering Code Marking IPI60R385CP PG-TO262 SP000103250 6R385P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 9.0 T C=100 C 5.7 Pulsed drain current2) I D,pulse T C=25 C 27 Avalanche energy, single pulse E AS I D=3.4 A, V DD=50 V 227 Avalanche energy, repetitive t AR2),3) E AR I D=3.4 A, V DD=50 V 0.3 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 2.0 Unit A mJ 3 A V DS=0...480 V 50 V/ns static 20 V AC (f >1 Hz) 30 T C=25 C 83 W -55 ... 150 C M3 and M3.5 screws page 1 60 Ncm 2006-04-05 IPI60R385CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Diode pulse current 2) I S,pulse Reverse diode dv /dt 4) dv /dt Parameter Symbol Conditions Value Unit 5.2 T C=25 C A 27 15 V/ns Values Unit min. typ. max. - - 1.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 C V K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.34 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 C - - 1 V DS=600 V, V GS=0 V, T j=150 C - 10 - A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=5.2 A, T j=25 C - 0.35 0.385 V GS=10 V, I D=5.2 A, T j=150 C - 0.94 - f =1 MHz, open drain - 1.8 - Gate resistance Rev. 2.0 RG page 2 2006-04-05 IPI60R385CP Parameter Values Symbol Conditions Unit min. typ. max. - 790 - - 38 - - 36 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 96 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 40 - Fall time tf - 5 - Gate to source charge Q gs - 4 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 17 22 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 260 - ns - 3.1 - C - 24 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=5.2 A, R G=3.3 ns Gate Charge Characteristics V DD=400 V, I D=5.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=5.2 A, T j=25 C V R=400 V, I F=I S, di F/dt =100 A/s 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD<=ID, di/dt<=400A/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 page 3 2006-04-05 IPI60R385CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 C; D =0 parameter: t p 102 100 limited by on-state resistance 80 1 s 10 s 101 60 I D [A] P tot [W] 100 s 1 ms 40 DC 100 10 ms 20 10-1 0 0 40 80 120 100 160 101 102 T C [C] 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC=f(t P) I D=f(V DS); T j=25 C parameter: D=t p/T parameter: V GS 101 25 20 V 8V 10 V 7V 20 100 6V 0.5 Z thJC [K/W] 15 I D [A] 0.2 0.1 0.05 10-1 5.5 V 10 0.02 0.01 5V 5 single pulse 4.5 V 10-2 10-5 0 10-4 10-3 10-2 10-1 100 Rev. 2.0 0 5 10 15 20 V DS [V] t p [s] page 4 2006-04-05 IPI60R385CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 C R DS(on)=f(I D); T j=150 C parameter: V GS parameter: V GS 16 1.6 8V 14 6V 7V 10 V 7V 5V 5.5 V 6V 20 V 12 6.5 V 1.2 20 V 5.5 V 8 R DS(on) [] I D [A] 10 5V 0.8 6 4.5 V 4 0.4 2 0 0 0 5 10 15 20 0 5 10 15 20 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=5.2 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 36 1 32 28 0.8 24 I D [A] R DS(on) [] C 25 0.6 C 150 16 98 % 0.4 20 typ 12 8 0.2 4 0 0 -60 -20 20 60 100 140 180 T j [C] Rev. 2.0 0 2 4 6 8 10 V GS [V] page 5 2006-04-05 IPI60R385CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=5.2 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 9 8 120 V 7 400 V 150 C, 98% 25 C 150 C 101 I F [A] V GS [V] 6 5 4 100 3 25 C, 98% 2 1 10-1 0 0 5 10 15 0 20 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=3.4 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 700 250 200 660 E AS [mJ] V BR(DSS) [V] 150 100 620 580 50 540 0 20 60 100 140 180 T j [C] Rev. 2.0 -60 -20 20 60 100 140 180 T j [C] page 6 2006-04-05 IPI60R385CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 6 105 104 4 E oss [J] C [pF] 10 Ciss 3 102 Coss 2 101 Crss 10 0 0 0 100 200 300 400 500 V DS [V] Rev. 2.0 0 100 200 300 400 500 600 V DS [V] page 7 2006-04-05 IPI60R385CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-04-05 IPI60R385CP PG-TO262-3-1 : Outlines Dimensions in mm/inches: Rev. 2.0 page 9 2006-04-05 IPI60R385CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-04-05